Overview
The ESD8351XV2T1G is an ESD protection diode designed by onsemi to safeguard high-speed data lines from electrostatic discharge (ESD). This device is part of the ESD8351 series, known for its ultra-low capacitance and low ESD clamping voltage, making it an ideal solution for protecting voltage-sensitive high-speed data lines.
The ESD8351XV2T1G is AEC-Q101 qualified and PPAP capable, with a 'SZ' prefix indicating its suitability for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | I/O Pin to GND | - | - | 3.3 | V |
| Breakdown Voltage | VBR | IT = 1 mA, I/O Pin to GND | 5.5 | 7.0 | 7.8 | V |
| Reverse Leakage Current | IR | VRWM = 3.3 V, I/O Pin to GND | - | - | 500 nA | nA |
| Holding Reverse Voltage | VHOLD | I/O Pin to GND | - | - | 1.15 | V |
| Holding Reverse Current | IHOLD | I/O Pin to GND | - | - | 20 mA | mA |
| Clamping Voltage (TLP) | VC | IPP = 8 A, IEC 61000-4-2 Level 2 equivalent | - | - | 6.5 | V |
| Dynamic Resistance | RDYN | Pin1 to Pin2, Pin2 to Pin1 | 0.59 | 0.62 | - | Ω |
| Junction Capacitance | CJ | VR = 0 V, f = 1 MHz | - | - | 0.55 pF | pF |
| Maximum Peak Pulse Current | IPP | 8/20 μs @ TA = 25°C | - | - | 5.0 A | A |
| Operating Junction Temperature Range | TJ | - | -55 | - | 125 | °C |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | °C |
| Lead Solder Temperature - Maximum (10 Seconds) | TL | - | - | - | 260 | °C |
Key Features
- Ultra-low capacitance (0.55 pF max, I/O to GND)
- Low ESD clamping voltage
- Protection for IEC 61000-4-2 (Level 4) and ISO 10605 standards
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Pb-free, halogen-free, and RoHS compliant
- Dynamic resistance of 0.59 to 0.62 Ω
Applications
- USB 2.0
- eSATA
- DisplayPort
- USB 3.0 SS
- Other high-speed data lines requiring ESD protection
Q & A
- What is the primary function of the ESD8351XV2T1G?
The primary function of the ESD8351XV2T1G is to protect high-speed data lines from electrostatic discharge (ESD).
- What are the key features of the ESD8351XV2T1G?
The key features include ultra-low capacitance, low ESD clamping voltage, and compliance with IEC 61000-4-2 and ISO 10605 standards.
- What is the maximum reverse working voltage of the ESD8351XV2T1G?
The maximum reverse working voltage is 3.3 V.
- What is the breakdown voltage of the ESD8351XV2T1G?
The breakdown voltage ranges from 5.5 V to 7.8 V at IT = 1 mA.
- What is the maximum peak pulse current the ESD8351XV2T1G can handle?
The device can handle a maximum peak pulse current of 5.0 A for an 8/20 μs pulse at TA = 25°C.
- Is the ESD8351XV2T1G suitable for automotive applications?
- What are the typical applications for the ESD8351XV2T1G?
Typical applications include USB 2.0, eSATA, DisplayPort, and USB 3.0 SS.
- What is the operating junction temperature range of the ESD8351XV2T1G?
The operating junction temperature range is from -55°C to +125°C.
- Is the ESD8351XV2T1G RoHS compliant?
- What is the dynamic resistance of the ESD8351XV2T1G?
The dynamic resistance ranges from 0.59 Ω to 0.62 Ω.
