Overview
The SZESD8351P2T5G is an ESD protection diode developed by onsemi, designed to protect high-speed data lines from electrostatic discharge (ESD). This device is part of the ESD8351 series, which is known for its ultra-low capacitance and low ESD clamping voltage, making it an ideal solution for voltage-sensitive high-speed data lines.
The SZESD8351P2T5G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Operating Junction Temperature Range | TJ | -55 | 125 | °C | |
| Storage Temperature Range | Tstg | -55 | 150 | °C | |
| Lead Solder Temperature (10 Seconds) | TL | 260 | °C | ||
| IEC 61000-4-2 Contact (ESD) | ±15 kV | ||||
| IEC 61000-4-2 Air (ESD) | ±30 kV | ||||
| Maximum Peak Pulse Current (8/20 μs) | Ipp | 5.0 A | |||
| Reverse Working Voltage (I/O Pin to GND) | VRWM | 3.3 V | |||
| Breakdown Voltage (I/O Pin to GND) | VBR | 5.5 | 7.0 | 7.8 V | |
| Reverse Leakage Current (I/O Pin to GND) | IR | 500 nA | |||
| Clamping Voltage (TLP, IPP = 5 A) | VC | 8.2 V | |||
| Junction Capacitance (VR = 0 V, f = 1 MHz) | CJ | 0.55 pF |
Key Features
- Ultra-low capacitance (0.55 pF max, I/O to GND)
- Low ESD clamping voltage
- Protection for IEC 61000-4-2 (Level 4) and ISO 10605 standards
- SZ prefix for automotive and other applications requiring unique site and control change requirements
- AEC-Q101 qualified and PPAP capable
- Pb-free, halogen-free, and RoHS compliant
Applications
- USB 2.0
- eSATA
- DisplayPort
- USB 3.0 SS
- Other high-speed data lines requiring ESD protection
Q & A
- What is the primary function of the SZESD8351P2T5G?
The primary function of the SZESD8351P2T5G is to protect high-speed data lines from electrostatic discharge (ESD).
- What are the key specifications of the SZESD8351P2T5G?
Key specifications include ultra-low capacitance (0.55 pF max), low ESD clamping voltage, and compliance with IEC 61000-4-2 (Level 4) and ISO 10605 standards.
- What are the typical applications for the SZESD8351P2T5G?
Typical applications include USB 2.0, eSATA, DisplayPort, and USB 3.0 SS, among other high-speed data lines.
- Is the SZESD8351P2T5G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the operating junction temperature range of the SZESD8351P2T5G?
The operating junction temperature range is -55°C to +125°C.
- What is the maximum peak pulse current the SZESD8351P2T5G can handle?
The maximum peak pulse current is 5.0 A (8/20 μs).
- Is the SZESD8351P2T5G RoHS compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant.
- What is the breakdown voltage of the SZESD8351P2T5G?
The breakdown voltage is between 5.5 V and 7.8 V (I/O Pin to GND).
- Can the SZESD8351P2T5G be used for HDMI applications?
No, the ESD8351 series should not be used for HDMI applications due to potential latch-up issues; instead, devices like ESD8104 or ESD8040 are recommended.
- How does the SZESD8351P2T5G protect against ESD?
The device protects against ESD by clamping the voltage during an ESD event, ensuring that the voltage exposed to the IC remains as low as possible.
