Overview
The SZESD7351P2T5G is a part of the ESD7351 Series of ESD protection diodes manufactured by onsemi. These diodes are designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. They are particularly suited for applications requiring ultra-low capacitance, making them ideal for high-frequency designs such as USB 2.0 high-speed and antenna line applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Working Voltage | VRWM | 3.3 | V |
| Breakdown Voltage | VBR | 5.0 | V |
| Maximum Reverse Leakage Current | IR | < 1.0 nA (Typ), 50 nA (Max) | nA |
| Clamping Voltage @ 1 A | VC | 8.0 | V |
| Clamping Voltage @ 3 A | VC | 10 | V |
| Junction Capacitance | CJ | 0.6 pF (Max) | pF |
| Dynamic Resistance | RDYN | < 1 Ω | Ω |
| IEC 61000-4-2 ESD Protection Level | Level 4 | kV | |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Lead Solder Temperature (10 Second Duration) | TL | 260 | °C |
Key Features
- Low Capacitance (0.6 pF Max, I/O to GND)
- Low Clamping Voltage
- Low Leakage Current
- Fast Response Time (< 1 ns)
- Low Dynamic Resistance (< 1 Ω)
- IEC61000-4-2 Level 4 ESD Protection
- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
- RF Signal ESD Protection
- RF Switching, PA, and Antenna ESD Protection
- Near Field Communications
Q & A
- What is the primary function of the SZESD7351P2T5G? The primary function is to protect voltage-sensitive components from ESD and transient voltage events.
- What is the maximum reverse working voltage of the SZESD7351P2T5G? The maximum reverse working voltage is 3.3 V.
- What is the breakdown voltage of the SZESD7351P2T5G? The breakdown voltage is 5.0 V.
- What is the maximum reverse leakage current of the SZESD7351P2T5G? The maximum reverse leakage current is 50 nA.
- What is the clamping voltage at 1 A and 3 A? The clamping voltage is 8.0 V at 1 A and 10 V at 3 A.
- What is the junction capacitance of the SZESD7351P2T5G? The junction capacitance is 0.6 pF (Max).
- What is the dynamic resistance of the SZESD7351P2T5G? The dynamic resistance is less than 1 Ω.
- What ESD protection level does the SZESD7351P2T5G offer? It offers IEC 61000-4-2 Level 4 ESD protection.
- Is the SZESD7351P2T5G suitable for automotive applications? Yes, it is AEC-Q101 Qualified and PPAP Capable.
- Is the SZESD7351P2T5G RoHS compliant? Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
