ESD7461N2T5G
  • Share:

onsemi ESD7461N2T5G

Manufacturer No:
ESD7461N2T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 16VWM 39VC 2XDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD7461N2T5G, produced by onsemi, is an ultra-low capacitance ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This diode is particularly suited for applications requiring minimal capacitance and high ESD protection levels.

It features a micro-packaged design, making it ideal for use in space-constrained applications such as RF signal protection, RF switching, and antenna protection in wireless devices.

Key Specifications

Parameter Symbol Value Unit
Reverse Working Voltage VRWM 16 V
Breakdown Voltage @ IT = 1 mA VBR 16.5 - 22 - 28 V
Maximum Reverse Leakage Current @ VRWM = 16 V IR 100 nA nA
Clamping Voltage @ IEC 61000-4-2 ±8 kV Contact VC ±34 - ±47 V
Junction Capacitance @ VR = 0 V, f = 1 MHz CJ 0.30 pF pF
Insertion Loss @ 1 GHz 0.05 dB dB
Insertion Loss @ 3 GHz 0.10 dB dB
ESD Protection Levels IEC 61000-4-2 Level 4, ISO 10605
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Lead Solder Temperature - Maximum (10 Second Duration) TL 260 °C

Key Features

  • Ultra-Low Capacitance: 0.3 pF typical, ensuring minimal impact on high-frequency signals.
  • Industry Leading Capacitance Linearity Over Voltage: Ideal for RF applications.
  • Low Insertion Loss: 0.05 dB at 1 GHz and 0.10 dB at 3 GHz.
  • Low Leakage Current: Less than 1 nA typical.
  • Comprehensive ESD Protection: Meets IEC 61000-4-2 Level 4, IEC 61000-4-4, IEC 61000-4-5, and ISO 10605 standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • RF Signal ESD Protection: Protects RF signals in wireless devices.
  • RF Switching, PA, and Antenna ESD Protection: Safeguards critical components in RF circuits.
  • Near Field Communications (NFC): Ensures reliable operation in NFC applications.
  • USB 2.0 and USB 3.0 Protection: Protects USB interfaces from ESD events.

Q & A

  1. What is the primary function of the ESD7461N2T5G?

    The primary function of the ESD7461N2T5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.

  2. What is the typical capacitance of the ESD7461N2T5G?

    The typical capacitance is 0.3 pF.

  3. What are the insertion loss values at 1 GHz and 3 GHz?

    The insertion loss is 0.05 dB at 1 GHz and 0.10 dB at 3 GHz.

  4. What ESD protection standards does the ESD7461N2T5G meet?

    The ESD7461N2T5G meets IEC 61000-4-2 Level 4, IEC 61000-4-4, IEC 61000-4-5, and ISO 10605 standards.

  5. Is the ESD7461N2T5G suitable for automotive applications?
  6. Is the ESD7461N2T5G environmentally friendly?
  7. What is the maximum reverse working voltage of the ESD7461N2T5G?

    The maximum reverse working voltage is 16 V.

  8. What is the breakdown voltage of the ESD7461N2T5G?

    The breakdown voltage ranges from 16.5 V to 28 V at a test current of 1 mA.

  9. What is the maximum reverse leakage current of the ESD7461N2T5G?

    The maximum reverse leakage current is 100 nA at VRWM = 16 V.

  10. What are the typical applications of the ESD7461N2T5G?

    Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, near field communications, and USB 2.0 and USB 3.0 protection.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):16V (Max)
Voltage - Breakdown (Min):16.5V
Voltage - Clamping (Max) @ Ipp:39V
Current - Peak Pulse (10/1000µs):16A (100ns)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:Automotive, RF Antenna
Capacitance @ Frequency:0.3pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-XDFN (1x0.6) (SOD-882)
0 Remaining View Similar

In Stock

$0.48
1,534

Please send RFQ , we will respond immediately.

Same Series
ESD7102BT1G
ESD7102BT1G
TVS DIODE 5VWM 30VC SC75 SOT416
SZESD7102BT1G
SZESD7102BT1G
TVS DIODE 5VWM 30VC SC75 SOT416

Similar Products

Part Number ESD7461N2T5G ESD7471N2T5G ESD7421N2T5G ESD7451N2T5G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
Type Zener Zener Zener Zener
Unidirectional Channels - - - -
Bidirectional Channels 1 1 1 1
Voltage - Reverse Standoff (Typ) 16V (Max) 5.3V (Max) 5V 3.3V (Max)
Voltage - Breakdown (Min) 16.5V 7V 10.5V 6V (Typ)
Voltage - Clamping (Max) @ Ipp 39V - 38.1V -
Current - Peak Pulse (10/1000µs) 16A (100ns) - 16A (100ns) -
Power - Peak Pulse - - - -
Power Line Protection No No No No
Applications Automotive, RF Antenna Automotive, RF Antenna General Purpose Automotive, RF Antenna
Capacitance @ Frequency 0.3pF @ 1MHz 0.24pF @ 1MHz 0.3pF @ 1MHz 0.25pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882)

Related Product By Categories

ESD7351HT1G
ESD7351HT1G
onsemi
TVS DIODE 3.3VWM SOD323
PTVS14VP1UP,115
PTVS14VP1UP,115
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC CFP5
SMBJ28A/TR13
SMBJ28A/TR13
YAGEO
TVS DIODE 28VWM 45.4VC DO214AA
ESD9R3.3ST5G
ESD9R3.3ST5G
onsemi
TVS DIODE 3.3VWM 7.8VC SOD923
PESD12VS1ULD,315
PESD12VS1ULD,315
Nexperia USA Inc.
TVS DIODE 12VWM 35VC DFN1006D-2
CM1213A-04MR
CM1213A-04MR
onsemi
TVS DIODE 3.3VWM 10VC 10MSOP
PESD5Z5.0F
PESD5Z5.0F
Nexperia USA Inc.
TVS DIODE 5VWM 18VC SOD523
SM6T100CAHE3_A/H
SM6T100CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T6V8CAHE3/52
SM6T6V8CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T12AHM3/H
SM15T12AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM6T33CAHM3/H
SM6T33CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA

Related Product By Brand

2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD