ESD7461N2T5G
  • Share:

onsemi ESD7461N2T5G

Manufacturer No:
ESD7461N2T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 16VWM 39VC 2XDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD7461N2T5G, produced by onsemi, is an ultra-low capacitance ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This diode is particularly suited for applications requiring minimal capacitance and high ESD protection levels.

It features a micro-packaged design, making it ideal for use in space-constrained applications such as RF signal protection, RF switching, and antenna protection in wireless devices.

Key Specifications

Parameter Symbol Value Unit
Reverse Working Voltage VRWM 16 V
Breakdown Voltage @ IT = 1 mA VBR 16.5 - 22 - 28 V
Maximum Reverse Leakage Current @ VRWM = 16 V IR 100 nA nA
Clamping Voltage @ IEC 61000-4-2 ±8 kV Contact VC ±34 - ±47 V
Junction Capacitance @ VR = 0 V, f = 1 MHz CJ 0.30 pF pF
Insertion Loss @ 1 GHz 0.05 dB dB
Insertion Loss @ 3 GHz 0.10 dB dB
ESD Protection Levels IEC 61000-4-2 Level 4, ISO 10605
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Lead Solder Temperature - Maximum (10 Second Duration) TL 260 °C

Key Features

  • Ultra-Low Capacitance: 0.3 pF typical, ensuring minimal impact on high-frequency signals.
  • Industry Leading Capacitance Linearity Over Voltage: Ideal for RF applications.
  • Low Insertion Loss: 0.05 dB at 1 GHz and 0.10 dB at 3 GHz.
  • Low Leakage Current: Less than 1 nA typical.
  • Comprehensive ESD Protection: Meets IEC 61000-4-2 Level 4, IEC 61000-4-4, IEC 61000-4-5, and ISO 10605 standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • RF Signal ESD Protection: Protects RF signals in wireless devices.
  • RF Switching, PA, and Antenna ESD Protection: Safeguards critical components in RF circuits.
  • Near Field Communications (NFC): Ensures reliable operation in NFC applications.
  • USB 2.0 and USB 3.0 Protection: Protects USB interfaces from ESD events.

Q & A

  1. What is the primary function of the ESD7461N2T5G?

    The primary function of the ESD7461N2T5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.

  2. What is the typical capacitance of the ESD7461N2T5G?

    The typical capacitance is 0.3 pF.

  3. What are the insertion loss values at 1 GHz and 3 GHz?

    The insertion loss is 0.05 dB at 1 GHz and 0.10 dB at 3 GHz.

  4. What ESD protection standards does the ESD7461N2T5G meet?

    The ESD7461N2T5G meets IEC 61000-4-2 Level 4, IEC 61000-4-4, IEC 61000-4-5, and ISO 10605 standards.

  5. Is the ESD7461N2T5G suitable for automotive applications?
  6. Is the ESD7461N2T5G environmentally friendly?
  7. What is the maximum reverse working voltage of the ESD7461N2T5G?

    The maximum reverse working voltage is 16 V.

  8. What is the breakdown voltage of the ESD7461N2T5G?

    The breakdown voltage ranges from 16.5 V to 28 V at a test current of 1 mA.

  9. What is the maximum reverse leakage current of the ESD7461N2T5G?

    The maximum reverse leakage current is 100 nA at VRWM = 16 V.

  10. What are the typical applications of the ESD7461N2T5G?

    Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, near field communications, and USB 2.0 and USB 3.0 protection.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):16V (Max)
Voltage - Breakdown (Min):16.5V
Voltage - Clamping (Max) @ Ipp:39V
Current - Peak Pulse (10/1000µs):16A (100ns)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:Automotive, RF Antenna
Capacitance @ Frequency:0.3pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-XDFN (1x0.6) (SOD-882)
0 Remaining View Similar

In Stock

$0.48
1,534

Please send RFQ , we will respond immediately.

Same Series
ESD7102BT1G
ESD7102BT1G
TVS DIODE 5VWM 30VC SC75 SOT416
SZESD7102BT1G
SZESD7102BT1G
TVS DIODE 5VWM 30VC SC75 SOT416

Similar Products

Part Number ESD7461N2T5G ESD7471N2T5G ESD7421N2T5G ESD7451N2T5G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
Type Zener Zener Zener Zener
Unidirectional Channels - - - -
Bidirectional Channels 1 1 1 1
Voltage - Reverse Standoff (Typ) 16V (Max) 5.3V (Max) 5V 3.3V (Max)
Voltage - Breakdown (Min) 16.5V 7V 10.5V 6V (Typ)
Voltage - Clamping (Max) @ Ipp 39V - 38.1V -
Current - Peak Pulse (10/1000µs) 16A (100ns) - 16A (100ns) -
Power - Peak Pulse - - - -
Power Line Protection No No No No
Applications Automotive, RF Antenna Automotive, RF Antenna General Purpose Automotive, RF Antenna
Capacitance @ Frequency 0.3pF @ 1MHz 0.24pF @ 1MHz 0.3pF @ 1MHz 0.25pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882)

Related Product By Categories

PESD5V0S1UL,315
PESD5V0S1UL,315
Nexperia USA Inc.
TVS DIODE 5VWM 20VC DFN1006-2
SMAJ30CA-TR
SMAJ30CA-TR
STMicroelectronics
TVS DIODE 30VWM 64.3VC SMA
SZESD7351HT1G
SZESD7351HT1G
onsemi
TVS DIODE 3.3VWM SOD323
SMBJ20A-TR
SMBJ20A-TR
STMicroelectronics
TVS DIODE 20VWM 32.4VC SMB
SL15T1G
SL15T1G
onsemi
TVS DIODE 15VWM 30VC SOT23-3
PESD5V0U1BLD,315
PESD5V0U1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM DFN1006D-2
SMCJ5.0A/TR7
SMCJ5.0A/TR7
YAGEO
SMCJ, DO-204AB, 5V, 9.2V, REEL 7
SM6T22A-E3/5B
SM6T22A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM15T6V8CA-E3/9AT
SM15T6V8CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM15T220AHE3_A/H
SM15T220AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
SM15T24AHM3/I
SM15T24AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM6T100CAHM3/I
SM6T100CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP