ESD7461N2T5G
  • Share:

onsemi ESD7461N2T5G

Manufacturer No:
ESD7461N2T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 16VWM 39VC 2XDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD7461N2T5G, produced by onsemi, is an ultra-low capacitance ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This diode is particularly suited for applications requiring minimal capacitance and high ESD protection levels.

It features a micro-packaged design, making it ideal for use in space-constrained applications such as RF signal protection, RF switching, and antenna protection in wireless devices.

Key Specifications

Parameter Symbol Value Unit
Reverse Working Voltage VRWM 16 V
Breakdown Voltage @ IT = 1 mA VBR 16.5 - 22 - 28 V
Maximum Reverse Leakage Current @ VRWM = 16 V IR 100 nA nA
Clamping Voltage @ IEC 61000-4-2 ±8 kV Contact VC ±34 - ±47 V
Junction Capacitance @ VR = 0 V, f = 1 MHz CJ 0.30 pF pF
Insertion Loss @ 1 GHz 0.05 dB dB
Insertion Loss @ 3 GHz 0.10 dB dB
ESD Protection Levels IEC 61000-4-2 Level 4, ISO 10605
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Lead Solder Temperature - Maximum (10 Second Duration) TL 260 °C

Key Features

  • Ultra-Low Capacitance: 0.3 pF typical, ensuring minimal impact on high-frequency signals.
  • Industry Leading Capacitance Linearity Over Voltage: Ideal for RF applications.
  • Low Insertion Loss: 0.05 dB at 1 GHz and 0.10 dB at 3 GHz.
  • Low Leakage Current: Less than 1 nA typical.
  • Comprehensive ESD Protection: Meets IEC 61000-4-2 Level 4, IEC 61000-4-4, IEC 61000-4-5, and ISO 10605 standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • RF Signal ESD Protection: Protects RF signals in wireless devices.
  • RF Switching, PA, and Antenna ESD Protection: Safeguards critical components in RF circuits.
  • Near Field Communications (NFC): Ensures reliable operation in NFC applications.
  • USB 2.0 and USB 3.0 Protection: Protects USB interfaces from ESD events.

Q & A

  1. What is the primary function of the ESD7461N2T5G?

    The primary function of the ESD7461N2T5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.

  2. What is the typical capacitance of the ESD7461N2T5G?

    The typical capacitance is 0.3 pF.

  3. What are the insertion loss values at 1 GHz and 3 GHz?

    The insertion loss is 0.05 dB at 1 GHz and 0.10 dB at 3 GHz.

  4. What ESD protection standards does the ESD7461N2T5G meet?

    The ESD7461N2T5G meets IEC 61000-4-2 Level 4, IEC 61000-4-4, IEC 61000-4-5, and ISO 10605 standards.

  5. Is the ESD7461N2T5G suitable for automotive applications?
  6. Is the ESD7461N2T5G environmentally friendly?
  7. What is the maximum reverse working voltage of the ESD7461N2T5G?

    The maximum reverse working voltage is 16 V.

  8. What is the breakdown voltage of the ESD7461N2T5G?

    The breakdown voltage ranges from 16.5 V to 28 V at a test current of 1 mA.

  9. What is the maximum reverse leakage current of the ESD7461N2T5G?

    The maximum reverse leakage current is 100 nA at VRWM = 16 V.

  10. What are the typical applications of the ESD7461N2T5G?

    Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, near field communications, and USB 2.0 and USB 3.0 protection.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):16V (Max)
Voltage - Breakdown (Min):16.5V
Voltage - Clamping (Max) @ Ipp:39V
Current - Peak Pulse (10/1000µs):16A (100ns)
Power - Peak Pulse:- 
Power Line Protection:No
Applications:Automotive, RF Antenna
Capacitance @ Frequency:0.3pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-XDFN (1x0.6) (SOD-882)
0 Remaining View Similar

In Stock

$0.48
1,534

Please send RFQ , we will respond immediately.

Same Series
ESD7102BT1G
ESD7102BT1G
TVS DIODE 5VWM 30VC SC75 SOT416
SZESD7102BT1G
SZESD7102BT1G
TVS DIODE 5VWM 30VC SC75 SOT416

Similar Products

Part Number ESD7461N2T5G ESD7471N2T5G ESD7421N2T5G ESD7451N2T5G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
Type Zener Zener Zener Zener
Unidirectional Channels - - - -
Bidirectional Channels 1 1 1 1
Voltage - Reverse Standoff (Typ) 16V (Max) 5.3V (Max) 5V 3.3V (Max)
Voltage - Breakdown (Min) 16.5V 7V 10.5V 6V (Typ)
Voltage - Clamping (Max) @ Ipp 39V - 38.1V -
Current - Peak Pulse (10/1000µs) 16A (100ns) - 16A (100ns) -
Power - Peak Pulse - - - -
Power Line Protection No No No No
Applications Automotive, RF Antenna Automotive, RF Antenna General Purpose Automotive, RF Antenna
Capacitance @ Frequency 0.3pF @ 1MHz 0.24pF @ 1MHz 0.3pF @ 1MHz 0.25pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882) 2-XDFN (1x0.6) (SOD-882)

Related Product By Categories

ESD7104MUTAG
ESD7104MUTAG
onsemi
TVS DIODE 5VWM 10VC 10UDFN
PTVS5V0P1UP,115
PTVS5V0P1UP,115
Nexperia USA Inc.
TVS DIODE 5VWM 9.2VC CFP5
PESD2CANFD24U-UX
PESD2CANFD24U-UX
Nexperia USA Inc.
TVS DIODE
SMAJ15A-TR
SMAJ15A-TR
STMicroelectronics
TVS DIODE 15VWM 32.5VC SMA
TPD4E001DPKR
TPD4E001DPKR
Texas Instruments
TVS DIODE 5.5VWM 6USON
BZW50-33BRL
BZW50-33BRL
STMicroelectronics
TVS DIODE 33VWM 76VC R6
SZMMBZ15VDLT1G
SZMMBZ15VDLT1G
onsemi
TVS DIODE 12.8VWM 21.2VC SOT23-3
SM6T22CAHE3_A/I
SM6T22CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM15T68A-M3/57T
SM15T68A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T15AHE3_A/H
SM15T15AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM15T18AHE3_A/H
SM15T18AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T30CAHE3_A/I
SM15T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP