Overview
The ESD7551N2T5G, produced by onsemi, is an ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This micro-packaged diode is particularly suited for applications where ultra-low capacitance and minimal board space are critical. It offers excellent clamping capability, low leakage, and fast response time, making it ideal for high-frequency designs such as USB 2.0 high-speed and antenna line applications.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Ultra-Low Capacitance | Cd | 0.35 | pF |
Stand-off Voltage | VRWM | 3.3 | V |
Breakdown Voltage | VBR | 5.0 - 7.5 | V |
Maximum Reverse Leakage Current | IR | < 1.0 | nA |
Clamping Voltage @ 1 A | VC | 10 | V |
Response Time | tP | < 1 ns | ns |
ESD Contact Voltage | Vesd | ±25 kV | kV |
ESD Air Gap Voltage | Vesd | ±25 kV | kV |
Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
Lead Solder Temperature (10 Second Duration) | TL | 260 | °C |
Key Features
- Ultra-low capacitance (0.35 pF max) for high-frequency applications.
- Low clamping voltage and low dynamic resistance.
- Fast response time (< 1 ns) for effective ESD protection.
- Low leakage current (< 1.0 nA) to minimize power consumption.
- Protection compliant with IEC 61000-4-2 (Level 4) and ISO 10605 standards.
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Wettable flank package (SZESD7551MXWT5G) for optimal automated optical inspection (AOI).
Applications
- RF signal ESD protection.
- RF switching, PA, and antenna ESD protection.
- Near Field Communications (NFC) applications.
- USB 2.0 high-speed and other high-frequency designs where board space is limited.
Q & A
- What is the primary function of the ESD7551N2T5G?
The ESD7551N2T5G is designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What is the ultra-low capacitance value of the ESD7551N2T5G?
The ultra-low capacitance value is 0.35 pF maximum.
- What are the stand-off and breakdown voltages of the ESD7551N2T5G?
The stand-off voltage is 3.3 V, and the breakdown voltage ranges from 5.0 to 7.5 V.
- What is the response time of the ESD7551N2T5G?
The response time is less than 1 ns.
- Is the ESD7551N2T5G compliant with any specific ESD protection standards?
Yes, it is compliant with IEC 61000-4-2 (Level 4) and ISO 10605 standards.
- What are the typical applications of the ESD7551N2T5G?
Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, and Near Field Communications (NFC).
- Is the ESD7551N2T5G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- Is the ESD7551N2T5G environmentally friendly?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What package options are available for the ESD7551N2T5G?
The device is available in an X2DFN2 package, with a wettable flank option (SZESD7551MXWT5G) for optimal automated optical inspection (AOI).
- What is the maximum lead solder temperature for the ESD7551N2T5G?
The maximum lead solder temperature is 260°C for a 10-second duration.