ESD7551N2T5G
  • Share:

onsemi ESD7551N2T5G

Manufacturer No:
ESD7551N2T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 3.3VWM 13VC 2X2DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD7551N2T5G, produced by onsemi, is an ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This micro-packaged diode is particularly suited for applications where ultra-low capacitance and minimal board space are critical. It offers excellent clamping capability, low leakage, and fast response time, making it ideal for high-frequency designs such as USB 2.0 high-speed and antenna line applications.

Key Specifications

Parameter Symbol Value Unit
Ultra-Low Capacitance Cd 0.35 pF
Stand-off Voltage VRWM 3.3 V
Breakdown Voltage VBR 5.0 - 7.5 V
Maximum Reverse Leakage Current IR < 1.0 nA
Clamping Voltage @ 1 A VC 10 V
Response Time tP < 1 ns ns
ESD Contact Voltage Vesd ±25 kV kV
ESD Air Gap Voltage Vesd ±25 kV kV
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Lead Solder Temperature (10 Second Duration) TL 260 °C

Key Features

  • Ultra-low capacitance (0.35 pF max) for high-frequency applications.
  • Low clamping voltage and low dynamic resistance.
  • Fast response time (< 1 ns) for effective ESD protection.
  • Low leakage current (< 1.0 nA) to minimize power consumption.
  • Protection compliant with IEC 61000-4-2 (Level 4) and ISO 10605 standards.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Wettable flank package (SZESD7551MXWT5G) for optimal automated optical inspection (AOI).

Applications

  • RF signal ESD protection.
  • RF switching, PA, and antenna ESD protection.
  • Near Field Communications (NFC) applications.
  • USB 2.0 high-speed and other high-frequency designs where board space is limited.

Q & A

  1. What is the primary function of the ESD7551N2T5G?

    The ESD7551N2T5G is designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.

  2. What is the ultra-low capacitance value of the ESD7551N2T5G?

    The ultra-low capacitance value is 0.35 pF maximum.

  3. What are the stand-off and breakdown voltages of the ESD7551N2T5G?

    The stand-off voltage is 3.3 V, and the breakdown voltage ranges from 5.0 to 7.5 V.

  4. What is the response time of the ESD7551N2T5G?

    The response time is less than 1 ns.

  5. Is the ESD7551N2T5G compliant with any specific ESD protection standards?

    Yes, it is compliant with IEC 61000-4-2 (Level 4) and ISO 10605 standards.

  6. What are the typical applications of the ESD7551N2T5G?

    Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, and Near Field Communications (NFC).

  7. Is the ESD7551N2T5G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.

  8. Is the ESD7551N2T5G environmentally friendly?

    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  9. What package options are available for the ESD7551N2T5G?

    The device is available in an X2DFN2 package, with a wettable flank option (SZESD7551MXWT5G) for optimal automated optical inspection (AOI).

  10. What is the maximum lead solder temperature for the ESD7551N2T5G?

    The maximum lead solder temperature is 260°C for a 10-second duration.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):3.3V (Max)
Voltage - Breakdown (Min):5V
Voltage - Clamping (Max) @ Ipp:13V
Current - Peak Pulse (10/1000µs):- 
Power - Peak Pulse:- 
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:0.25pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-X2DFN (1x0.6)
0 Remaining View Similar

In Stock

$0.37
846

Please send RFQ , we will respond immediately.

Similar Products

Part Number ESD7551N2T5G ESD7571N2T5G ESD7451N2T5G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Type Zener Zener Zener
Unidirectional Channels - - -
Bidirectional Channels 1 1 1
Voltage - Reverse Standoff (Typ) 3.3V (Max) 5.3V (Max) 3.3V (Max)
Voltage - Breakdown (Min) 5V 7V 6V (Typ)
Voltage - Clamping (Max) @ Ipp 13V 15V -
Current - Peak Pulse (10/1000µs) - - -
Power - Peak Pulse - - -
Power Line Protection No No No
Applications General Purpose General Purpose Automotive, RF Antenna
Capacitance @ Frequency 0.25pF @ 1MHz 0.24pF @ 1MHz 0.25pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-X2DFN (1x0.6) 2-X2DFN (1x0.6) 2-XDFN (1x0.6) (SOD-882)

Related Product By Categories

PESD1CAN-UX
PESD1CAN-UX
Nexperia USA Inc.
TVS DIODE 24VWM 50VC SOT323
TPD2E001DZDR
TPD2E001DZDR
Texas Instruments
TVS DIODE 5.5VWM 4SOP
PTVS20VP1UP,115
PTVS20VP1UP,115
Nexperia USA Inc.
TVS DIODE 20VWM 32.4VC CFP5
ESDS312DBVR
ESDS312DBVR
Texas Instruments
TVS DIODE 3.6VWM 6.5VC SOT23-5
TPD2EUSB30ADRTR
TPD2EUSB30ADRTR
Texas Instruments
TVS DIODE 3.6VWM 8VC SOT9X3
ESD7571N2T5G
ESD7571N2T5G
onsemi
TVS DIODE 5.3VWM 15VC 2X2DFN
SMF15CT1G
SMF15CT1G
onsemi
TVS DIODE 15VWM 29VC SC88/SC70-6
SM6T30AHM3_A/H
SM6T30AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T100A-E3/9AT
SM15T100A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T7V5AY
SM15T7V5AY
STMicroelectronics
TVS DIODE 6.4VWM 14.5VC SMC
SM6T6V8AHE3/52
SM6T6V8AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T6V8CAHE3/52
SM6T6V8CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC