ESD7551N2T5G
  • Share:

onsemi ESD7551N2T5G

Manufacturer No:
ESD7551N2T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 3.3VWM 13VC 2X2DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD7551N2T5G, produced by onsemi, is an ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This micro-packaged diode is particularly suited for applications where ultra-low capacitance and minimal board space are critical. It offers excellent clamping capability, low leakage, and fast response time, making it ideal for high-frequency designs such as USB 2.0 high-speed and antenna line applications.

Key Specifications

Parameter Symbol Value Unit
Ultra-Low Capacitance Cd 0.35 pF
Stand-off Voltage VRWM 3.3 V
Breakdown Voltage VBR 5.0 - 7.5 V
Maximum Reverse Leakage Current IR < 1.0 nA
Clamping Voltage @ 1 A VC 10 V
Response Time tP < 1 ns ns
ESD Contact Voltage Vesd ±25 kV kV
ESD Air Gap Voltage Vesd ±25 kV kV
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Lead Solder Temperature (10 Second Duration) TL 260 °C

Key Features

  • Ultra-low capacitance (0.35 pF max) for high-frequency applications.
  • Low clamping voltage and low dynamic resistance.
  • Fast response time (< 1 ns) for effective ESD protection.
  • Low leakage current (< 1.0 nA) to minimize power consumption.
  • Protection compliant with IEC 61000-4-2 (Level 4) and ISO 10605 standards.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Wettable flank package (SZESD7551MXWT5G) for optimal automated optical inspection (AOI).

Applications

  • RF signal ESD protection.
  • RF switching, PA, and antenna ESD protection.
  • Near Field Communications (NFC) applications.
  • USB 2.0 high-speed and other high-frequency designs where board space is limited.

Q & A

  1. What is the primary function of the ESD7551N2T5G?

    The ESD7551N2T5G is designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.

  2. What is the ultra-low capacitance value of the ESD7551N2T5G?

    The ultra-low capacitance value is 0.35 pF maximum.

  3. What are the stand-off and breakdown voltages of the ESD7551N2T5G?

    The stand-off voltage is 3.3 V, and the breakdown voltage ranges from 5.0 to 7.5 V.

  4. What is the response time of the ESD7551N2T5G?

    The response time is less than 1 ns.

  5. Is the ESD7551N2T5G compliant with any specific ESD protection standards?

    Yes, it is compliant with IEC 61000-4-2 (Level 4) and ISO 10605 standards.

  6. What are the typical applications of the ESD7551N2T5G?

    Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, and Near Field Communications (NFC).

  7. Is the ESD7551N2T5G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.

  8. Is the ESD7551N2T5G environmentally friendly?

    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  9. What package options are available for the ESD7551N2T5G?

    The device is available in an X2DFN2 package, with a wettable flank option (SZESD7551MXWT5G) for optimal automated optical inspection (AOI).

  10. What is the maximum lead solder temperature for the ESD7551N2T5G?

    The maximum lead solder temperature is 260°C for a 10-second duration.

Product Attributes

Type:Zener
Unidirectional Channels:- 
Bidirectional Channels:1
Voltage - Reverse Standoff (Typ):3.3V (Max)
Voltage - Breakdown (Min):5V
Voltage - Clamping (Max) @ Ipp:13V
Current - Peak Pulse (10/1000µs):- 
Power - Peak Pulse:- 
Power Line Protection:No
Applications:General Purpose
Capacitance @ Frequency:0.25pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-X2DFN (1x0.6)
0 Remaining View Similar

In Stock

$0.37
846

Please send RFQ , we will respond immediately.

Similar Products

Part Number ESD7551N2T5G ESD7571N2T5G ESD7451N2T5G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Type Zener Zener Zener
Unidirectional Channels - - -
Bidirectional Channels 1 1 1
Voltage - Reverse Standoff (Typ) 3.3V (Max) 5.3V (Max) 3.3V (Max)
Voltage - Breakdown (Min) 5V 7V 6V (Typ)
Voltage - Clamping (Max) @ Ipp 13V 15V -
Current - Peak Pulse (10/1000µs) - - -
Power - Peak Pulse - - -
Power Line Protection No No No
Applications General Purpose General Purpose Automotive, RF Antenna
Capacitance @ Frequency 0.25pF @ 1MHz 0.24pF @ 1MHz 0.25pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-X2DFN (1x0.6) 2-X2DFN (1x0.6) 2-XDFN (1x0.6) (SOD-882)

Related Product By Categories

ESDZV5-1BF4
ESDZV5-1BF4
STMicroelectronics
TVS DIODE 5.5VWM 10VC 0201
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SZESD8351HT1G
SZESD8351HT1G
onsemi
TVS DIODE 3.3VWM 11.2VC SOD323
PRTR5V0U4D/S911125
PRTR5V0U4D/S911125
NXP USA Inc.
TRANS VOLTAGE SUPPRESSOR DIODE
SMAJ12A/TR13
SMAJ12A/TR13
YAGEO
TVS DIODE 12VWM 19.9VC DO214AC
SM6T39CA-E3/5B
SM6T39CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
TPD4E001DPKR
TPD4E001DPKR
Texas Instruments
TVS DIODE 5.5VWM 6USON
SL15T1G
SL15T1G
onsemi
TVS DIODE 15VWM 30VC SOT23-3
1SMB24CAT3G
1SMB24CAT3G
onsemi
TVS DIODE 24VWM 38.9VC 425TEPBGA
SM15T100CAHE3_A/H
SM15T100CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
BZA100,118
BZA100,118
NXP USA Inc.
TVS DIODE 6.8VWM 11VC 20SO
SM15T200CAHM3/H
SM15T200CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB

Related Product By Brand

BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC