Overview
The SZESD7371P2T5G is an ESD protection diode from onsemi, designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This device is part of the ESD7371 Series, which is renowned for its ultra-low capacitance, making it ideal for applications where board space is limited and high-frequency performance is critical.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5.3 | V | ||
| Breakdown Voltage | VBR | 7.0 | V | ||
| Maximum Reverse Leakage Current | IR | 1.0 nA | |||
| Clamping Voltage @ 1 A | VC | 11 | 15 | V | |
| Clamping Voltage @ 3 A | VC | 14 | 20 | V | |
| Junction Capacitance | CJ | 0.43 | 0.7 | pF | |
| Dynamic Resistance | RDYN | 0.45 Ω | |||
| IEC 61000-4-2 ESD Protection | ±8 kV Contact / Air Discharged |
Key Features
- Industry-leading capacitance linearity over voltage, making it ideal for RF applications.
- Ultra-low capacitance (0.7 pF max, I/O to GND).
- Low leakage current (< 1 nA).
- Low dynamic resistance (< 1 Ω).
- IEC 61000-4-2 Level 4 ESD protection (±8 kV contact / air discharged).
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- RF signal ESD protection.
- RF switching, PA, and antenna ESD protection.
- Near Field Communications (NFC).
- USB 2.0 and USB 3.0 applications.
Q & A
- What is the primary function of the SZESD7371P2T5G?
The primary function of the SZESD7371P2T5G is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What are the key features of the SZESD7371P2T5G?
The key features include ultra-low capacitance, industry-leading capacitance linearity, low leakage current, low dynamic resistance, and high ESD protection levels.
- What are the typical applications for the SZESD7371P2T5G?
Typical applications include RF signal ESD protection, RF switching and antenna protection, Near Field Communications (NFC), and USB 2.0 and USB 3.0 applications.
- What is the maximum reverse working voltage of the SZESD7371P2T5G?
The maximum reverse working voltage (VRWM) is 5.3 V.
- What is the breakdown voltage of the SZESD7371P2T5G?
The breakdown voltage (VBR) is 7.0 V.
- What is the maximum junction capacitance of the SZESD7371P2T5G?
The maximum junction capacitance (CJ) is 0.7 pF.
- Is the SZESD7371P2T5G compliant with automotive standards?
- Is the SZESD7371P2T5G environmentally friendly?
- What are the package options for the SZESD7371P2T5G?
The device is available in SOD-923 package.
- How does the SZESD7371P2T5G protect against ESD events?
