ESD7371XV2T1G
  • Share:

onsemi ESD7371XV2T1G

Manufacturer No:
ESD7371XV2T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TVS DIODE 5.3VWM SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ESD7371XV2T1G from onsemi is a high-performance ESD protection diode designed to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This device is particularly suited for applications where ultra-low capacitance and high linearity are crucial, such as in RF signal protection and antenna line applications for wireless handsets and terminals.

Key Specifications

ParameterSymbolValueUnit
Breakdown VoltageVBR7.0 VV
Maximum Reverse Peak Pulse CurrentIPP3 AA
Clamping Voltage @ IPP = 1 AVC11 - 15 VV
Clamping Voltage @ IPP = 3 AVC14 - 20 VV
Junction Capacitance @ VR = 0 V, f = 1 MHzCJ0.7 pFpF
Reverse Leakage Current @ VRWM = 5.3 VIR< 1 nAnA
Package / CaseSOD-523-2
Operating Temperature RangeTJ, Tstg-55 to +150 °C°C
Lead Solder Temperature - Maximum (10 Second Duration)TL260 °C°C

Key Features

  • Industry-leading capacitance linearity over voltage, making it ideal for RF applications.
  • Ultra-low capacitance (0.7 pF max, I/O to GND).
  • Low leakage current (< 1 nA).
  • Low dynamic resistance (< 1 Ω).
  • IEC61000-4-2 Level 4 ESD protection, withstanding 1000 ESD strikes ±8 kV contact/air discharged.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • SZ prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

Applications

  • RF signal ESD protection.
  • RF switching, PA, and antenna ESD protection.
  • Near Field Communications (NFC).
  • USB 2.0 and USB 3.0 applications.

Q & A

  1. What is the primary function of the ESD7371XV2T1G? The primary function is to protect voltage-sensitive components from ESD and transient voltage events.
  2. What is the breakdown voltage of the ESD7371XV2T1G? The breakdown voltage is 7.0 V.
  3. What is the maximum reverse peak pulse current (IPP) the device can handle? The device can handle up to 3 A.
  4. What is the clamping voltage at IPP = 1 A and IPP = 3 A? The clamping voltage is 11 - 15 V at IPP = 1 A and 14 - 20 V at IPP = 3 A.
  5. What is the junction capacitance of the ESD7371XV2T1G? The junction capacitance is 0.7 pF at VR = 0 V and f = 1 MHz.
  6. Is the ESD7371XV2T1G RoHS compliant? Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  7. What are the typical applications of the ESD7371XV2T1G? Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, NFC, and USB 2.0 and USB 3.0 applications.
  8. What is the operating temperature range of the ESD7371XV2T1G? The operating temperature range is -55 to +150 °C.
  9. What is the maximum lead solder temperature for the ESD7371XV2T1G? The maximum lead solder temperature is 260 °C for a 10-second duration.
  10. Is the ESD7371XV2T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Type:Zener
Unidirectional Channels:1
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):5.3V (Max)
Voltage - Breakdown (Min):7V
Voltage - Clamping (Max) @ Ipp:- 
Current - Peak Pulse (10/1000µs):- 
Power - Peak Pulse:- 
Power Line Protection:No
Applications:RF Antenna
Capacitance @ Frequency:0.43pF @ 1MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
0 Remaining View Similar

In Stock

$0.43
375

Please send RFQ , we will respond immediately.

Same Series
ESD7371HT1G
ESD7371HT1G
TVS DIODE 5.3VWM SOD323
ESD7371XV2T1G
ESD7371XV2T1G
TVS DIODE 5.3VWM SOD523
SZESD7371HT1G
SZESD7371HT1G
TVS DIODE 5.3VWM SOD323
SZESD7371XV2T1G
SZESD7371XV2T1G
TVS DIODE 5.3VWM SOD523

Similar Products

Part Number ESD7371XV2T1G ESD7371XV2T5G ESD7351XV2T1G ESD7361XV2T1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Last Time Buy Obsolete Active Last Time Buy
Type Zener Zener Zener Zener
Unidirectional Channels 1 1 1 1
Bidirectional Channels - - - -
Voltage - Reverse Standoff (Typ) 5.3V (Max) 5.3V (Max) 3.3V (Max) 5V
Voltage - Breakdown (Min) 7V 7V 5V 16.5V
Voltage - Clamping (Max) @ Ipp - 20V - 34V (Typ)
Current - Peak Pulse (10/1000µs) - 3A - 16A (100ns)
Power - Peak Pulse - 35W - -
Power Line Protection No No No No
Applications RF Antenna General Purpose RF Antenna General Purpose
Capacitance @ Frequency 0.43pF @ 1MHz 0.43pF @ 1MHz 0.43pF @ 1MHz 0.55pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-79, SOD-523 SC-79, SOD-523 SC-79, SOD-523 SC-79, SOD-523
Supplier Device Package SOD-523 SOD-523 SOD-523 SOD-523

Related Product By Categories

PESD1CAN-UX
PESD1CAN-UX
Nexperia USA Inc.
TVS DIODE 24VWM 50VC SOT323
PTVS11VS1UR,115
PTVS11VS1UR,115
Nexperia USA Inc.
TVS DIODE 11VWM 18.2VC CFP3
PTVS20VP1UP,115
PTVS20VP1UP,115
Nexperia USA Inc.
TVS DIODE 20VWM 32.4VC CFP5
ESDLIN03-1BWY
ESDLIN03-1BWY
STMicroelectronics
TVS DIODE 26.5VWM 44VC SOT323-3
NUP2114UCMR6T1G
NUP2114UCMR6T1G
onsemi
TVS DIODE 5VWM 10VC 6TSOP
SMBJ5.0CAHM3_A/H
SMBJ5.0CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM15T12A-M3/9AT
SM15T12A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
1.5KE68AE3/TR13
1.5KE68AE3/TR13
Microsemi Corporation
TVS DIODE 58.1VWM 92VC CASE-1
SMBJ5.0CAHM4G
SMBJ5.0CAHM4G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AA
SM15T6V8CAHE3_A/I
SM15T6V8CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM15T24AHM3/I
SM15T24AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
PESD5V0S1BA/ZLX
PESD5V0S1BA/ZLX
NXP USA Inc.
DIODE ESD PROTECT SOD323

Related Product By Brand

MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD