Overview
The ESD7371HT1G is an ultra-low capacitance ESD protection diode designed by onsemi to safeguard voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. This device is particularly suited for applications where board space is limited and high performance is required. It features excellent clamping capability, low capacitance, high breakdown voltage, and fast response time, making it ideal for RF and other high-frequency applications.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5.3 | V | ||
| Breakdown Voltage | VBR | 7.0 | V | ||
| Reverse Leakage Current | IR | < 1.0 nA | |||
| Clamping Voltage @ 1 A | VC | 11 | 15 | V | |
| Clamping Voltage @ 3 A | VC | 14 | 20 | V | |
| Junction Capacitance @ 1 MHz | CJ | 0.43 | 0.7 | pF | |
| Dynamic Resistance | RDYN | < 1 Ω | |||
| ESD Protection (IEC 61000-4-2) | ±8 kV Contact / Air Discharged |
Key Features
- Industry-leading capacitance linearity over voltage, making it ideal for RF applications.
- Ultra-low capacitance (0.7 pF max, I/O to GND).
- Low leakage current (< 1 nA).
- Low dynamic resistance (< 1 Ω).
- IEC 61000-4-2 Level 4 ESD protection with 1000 ESD strikes ±8 kV Contact / Air Discharged.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- RF signal ESD protection.
- RF switching, PA, and antenna ESD protection.
- Near Field Communications (NFC).
- USB 2.0 and USB 3.0 applications.
Q & A
- What is the primary function of the ESD7371HT1G?
The ESD7371HT1G is designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What are the key features of the ESD7371HT1G?
Key features include ultra-low capacitance, industry-leading capacitance linearity, low leakage current, low dynamic resistance, and high ESD protection levels.
- What is the maximum reverse working voltage of the ESD7371HT1G?
The maximum reverse working voltage (VRWM) is 5.3 V.
- What is the breakdown voltage of the ESD7371HT1G?
The breakdown voltage (VBR) is 7.0 V.
- What is the clamping voltage of the ESD7371HT1G at 1 A and 3 A?
The clamping voltage (VC) is 11-15 V at 1 A and 14-20 V at 3 A.
- What are the typical applications of the ESD7371HT1G?
Typical applications include RF signal ESD protection, RF switching, PA, and antenna ESD protection, Near Field Communications (NFC), and USB 2.0 and USB 3.0 applications.
- Is the ESD7371HT1G compliant with automotive standards?
- Is the ESD7371HT1G environmentally friendly?
- What is the ESD protection level of the ESD7371HT1G according to IEC 61000-4-2?
The ESD protection level is ±8 kV Contact / Air Discharged.
- What is the junction capacitance of the ESD7371HT1G at 1 MHz?
The junction capacitance (CJ) is 0.43-0.7 pF at 1 MHz.
