Overview
The SM6T12AHE3/5B is a surface-mount transient voltage suppressor (TVS) from Vishay General Semiconductor - Diodes Division. This component is part of the SM6T series, designed to protect sensitive electronics against voltage transients and electrostatic discharges. The SM6T12AHE3/5B is particularly suited for applications requiring high reliability and stability in various environments, including automotive, industrial, and consumer electronics.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Pulse Power Dissipation (10/1000 μs) | PPPM | 600 W | W |
| Reverse Stand-Off Voltage (Typ) | VWM | 10.2 V | V |
| Breakdown Voltage (Min) | VBR | 12 V | V |
| Peak Pulse Current (10/1000 μs) | IPPM | See datasheet for specific values | A |
| Power Dissipation on Infinite Heatsink | PD | 5.0 W | W |
| Peak Forward Surge Current (10 ms single half sine-wave) | IFSM | 100 A | A |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -65 to +150 °C | °C |
| Package Type | SMB (DO-214AA) | ||
| Polarity | Unidirectional |
Key Features
- Low profile package ideal for automated placement.
- Glass passivated chip junction for enhanced reliability.
- Available in unidirectional and bidirectional configurations.
- 600 W peak pulse power capability with a 10/1000 μs waveform.
- Excellent clamping capability and low inductance.
- Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C.
- AEC-Q101 qualified for automotive applications.
- RoHS-compliant and halogen-free options available.
- Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C.
- Complies with UL94 V-0 flammability rating and JESD 201 class 2 whisker test.
Applications
The SM6T12AHE3/5B is used to protect sensitive electronics against voltage transients induced by inductive load switching and lightning. It is suitable for various applications including:
- Consumer electronics
- Computer systems
- Industrial equipment
- Automotive systems
- Telecommunication devices
- Signal lines of sensor units
- ICs and MOSFET protection
Q & A
- What is the peak pulse power dissipation of the SM6T12AHE3/5B?
The peak pulse power dissipation is 600 W with a 10/1000 μs waveform.
- What is the reverse stand-off voltage of the SM6T12AHE3/5B?
The reverse stand-off voltage (VWM) is typically 10.2 V.
- What is the breakdown voltage of the SM6T12AHE3/5B?
The breakdown voltage (VBR) is at least 12 V.
- What is the operating junction temperature range of the SM6T12AHE3/5B?
The operating junction temperature range is -55 to +150 °C.
- Is the SM6T12AHE3/5B AEC-Q101 qualified?
- What package type does the SM6T12AHE3/5B use?
The SM6T12AHE3/5B is packaged in SMB (DO-214AA)).
- What are the key features of the SM6T12AHE3/5B?
The key features include a low profile package, glass passivated chip junction, high peak pulse power capability, and low leakage current).
- What are the typical applications of the SM6T12AHE3/5B?
Typical applications include protection in consumer electronics, computer systems, industrial equipment, automotive systems, and telecommunication devices).
- Does the SM6T12AHE3/5B meet any specific standards?
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 260 °C for 10 seconds).
