BAS316/ZLF
  • Share:

NXP USA Inc. BAS316/ZLF

Manufacturer No:
BAS316/ZLF
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 215MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS316/ZLF is a high-speed switching diode produced by NXP USA Inc. This diode is designed for high-performance applications requiring fast switching times and low forward voltage drop. It is packaged in the SOD323 format, which is a surface-mount device, making it suitable for a wide range of electronic circuits. The BAS316/ZLF is compliant with the latest environmental standards, including ROHS and REACH directives, ensuring it is environmentally friendly and safe for use in various industries.

Key Specifications

ParameterConditionsMinTypMaxUnit
Forward Current (IF)---250mA
Reverse Voltage (VR)---100V
Forward Voltage (VF)IF = 1 mA--0.715V
Forward Voltage (VF)IF = 10 mA--0.855V
Forward Voltage (VF)IF = 150 mA--1.25V
Reverse Current (IR)VR = 25 V; Tj = 25 °C--30nA
Reverse Current (IR)VR = 80 V; Tj = 25 °C--0.5µA
Diode Capacitance (Cd)VR = 0 V; f = 1 MHz; Tj = 25 °C--1.5pF
Reverse Recovery Time (trr)IF = 10 mA; IR = 10 mA; RL = 100 Ω--4ns

Key Features

  • High-Speed Switching: The BAS316/ZLF is designed for high-speed switching applications, featuring a fast reverse recovery time of up to 4 ns.
  • Low Forward Voltage Drop: It has a low forward voltage drop, with typical values ranging from 0.715 V at 1 mA to 1.25 V at 150 mA.
  • High Reverse Voltage Withstand: The diode can withstand a maximum DC reverse voltage of 100 V.
  • Low Leakage Current: It has a low reverse current leakage of up to 0.5 µA at 80 V and 25 °C.
  • Environmental Compliance: Compliant with ROHS and REACH directives, ensuring environmental safety.
  • Surface Mount Package: Packaged in the SOD323 format, which is convenient for surface-mount technology (SMT) assembly.

Applications

  • Power Management: Suitable for various power management circuits due to its high-speed switching and low forward voltage drop.
  • Automotive Electronics: Can be used in automotive applications where high reliability and environmental compliance are crucial.
  • Signal Detection: Used in signal detection circuits to convert AC signals into DC electrical signals.
  • LED Lighting and Motor Drive: Applicable in LED lighting and motor drive circuits where fast switching and low energy loss are essential.

Q & A

  1. What is the maximum forward current of the BAS316/ZLF diode?
    The maximum forward current of the BAS316/ZLF diode is 250 mA.
  2. What is the reverse voltage withstand capability of the BAS316/ZLF?
    The BAS316/ZLF can withstand a maximum DC reverse voltage of 100 V.
  3. What is the typical forward voltage drop of the BAS316/ZLF at 10 mA?
    The typical forward voltage drop at 10 mA is 0.855 V.
  4. What is the reverse recovery time of the BAS316/ZLF?
    The reverse recovery time is up to 4 ns.
  5. Is the BAS316/ZLF compliant with environmental standards?
    Yes, it is compliant with ROHS and REACH directives.
  6. What is the package type of the BAS316/ZLF?
    The BAS316/ZLF is packaged in the SOD323 format.
  7. What are some common applications of the BAS316/ZLF?
    It is used in power management, automotive electronics, signal detection, LED lighting, and motor drive circuits.
  8. What is the maximum operating temperature of the BAS316/ZLF?
    The maximum operating temperature is 150 °C.
  9. How does the BAS316/ZLF handle high-frequency signals?
    The diode has a diode capacitance of up to 1.5 pF at 1 MHz, which helps in reducing noise and interference in high-frequency applications.
  10. Is the BAS316/ZLF suitable for surface-mount technology (SMT) assembly?
    Yes, it is designed for SMT assembly.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
475

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BAS316/ZLF BAS316/ZLX
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 215mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
LPC4330FET100Y
LPC4330FET100Y
NXP USA Inc.
IC MCU 32BIT ROMLESS 100TFBGA
TJA1048T,118
TJA1048T,118
NXP USA Inc.
IC TRANSCEIVER HALF 2/2 14SO
TJA1028T/3V3/10:11
TJA1028T/3V3/10:11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX