BAS316/ZLF
  • Share:

NXP USA Inc. BAS316/ZLF

Manufacturer No:
BAS316/ZLF
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 215MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS316/ZLF is a high-speed switching diode produced by NXP USA Inc. This diode is designed for high-performance applications requiring fast switching times and low forward voltage drop. It is packaged in the SOD323 format, which is a surface-mount device, making it suitable for a wide range of electronic circuits. The BAS316/ZLF is compliant with the latest environmental standards, including ROHS and REACH directives, ensuring it is environmentally friendly and safe for use in various industries.

Key Specifications

ParameterConditionsMinTypMaxUnit
Forward Current (IF)---250mA
Reverse Voltage (VR)---100V
Forward Voltage (VF)IF = 1 mA--0.715V
Forward Voltage (VF)IF = 10 mA--0.855V
Forward Voltage (VF)IF = 150 mA--1.25V
Reverse Current (IR)VR = 25 V; Tj = 25 °C--30nA
Reverse Current (IR)VR = 80 V; Tj = 25 °C--0.5µA
Diode Capacitance (Cd)VR = 0 V; f = 1 MHz; Tj = 25 °C--1.5pF
Reverse Recovery Time (trr)IF = 10 mA; IR = 10 mA; RL = 100 Ω--4ns

Key Features

  • High-Speed Switching: The BAS316/ZLF is designed for high-speed switching applications, featuring a fast reverse recovery time of up to 4 ns.
  • Low Forward Voltage Drop: It has a low forward voltage drop, with typical values ranging from 0.715 V at 1 mA to 1.25 V at 150 mA.
  • High Reverse Voltage Withstand: The diode can withstand a maximum DC reverse voltage of 100 V.
  • Low Leakage Current: It has a low reverse current leakage of up to 0.5 µA at 80 V and 25 °C.
  • Environmental Compliance: Compliant with ROHS and REACH directives, ensuring environmental safety.
  • Surface Mount Package: Packaged in the SOD323 format, which is convenient for surface-mount technology (SMT) assembly.

Applications

  • Power Management: Suitable for various power management circuits due to its high-speed switching and low forward voltage drop.
  • Automotive Electronics: Can be used in automotive applications where high reliability and environmental compliance are crucial.
  • Signal Detection: Used in signal detection circuits to convert AC signals into DC electrical signals.
  • LED Lighting and Motor Drive: Applicable in LED lighting and motor drive circuits where fast switching and low energy loss are essential.

Q & A

  1. What is the maximum forward current of the BAS316/ZLF diode?
    The maximum forward current of the BAS316/ZLF diode is 250 mA.
  2. What is the reverse voltage withstand capability of the BAS316/ZLF?
    The BAS316/ZLF can withstand a maximum DC reverse voltage of 100 V.
  3. What is the typical forward voltage drop of the BAS316/ZLF at 10 mA?
    The typical forward voltage drop at 10 mA is 0.855 V.
  4. What is the reverse recovery time of the BAS316/ZLF?
    The reverse recovery time is up to 4 ns.
  5. Is the BAS316/ZLF compliant with environmental standards?
    Yes, it is compliant with ROHS and REACH directives.
  6. What is the package type of the BAS316/ZLF?
    The BAS316/ZLF is packaged in the SOD323 format.
  7. What are some common applications of the BAS316/ZLF?
    It is used in power management, automotive electronics, signal detection, LED lighting, and motor drive circuits.
  8. What is the maximum operating temperature of the BAS316/ZLF?
    The maximum operating temperature is 150 °C.
  9. How does the BAS316/ZLF handle high-frequency signals?
    The diode has a diode capacitance of up to 1.5 pF at 1 MHz, which helps in reducing noise and interference in high-frequency applications.
  10. Is the BAS316/ZLF suitable for surface-mount technology (SMT) assembly?
    Yes, it is designed for SMT assembly.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
475

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS316/ZLF BAS316/ZLX
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 215mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
MIMXRT1051CVJ5B
MIMXRT1051CVJ5B
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
MKE04Z128VLH4
MKE04Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
74HC245PW/AU118
74HC245PW/AU118
NXP USA Inc.
IC TXRX NON-INVERT 6V 20TSSOP
74AHC1G66GW-Q100125
74AHC1G66GW-Q100125
NXP USA Inc.
SPST
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
BGU7005/Z/N2115
BGU7005/Z/N2115
NXP USA Inc.
NARROW BAND LOW POWER AMPLIFIER
PCF7961MTT/D1AC13J
PCF7961MTT/D1AC13J
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20TSSOP