BAS316/ZLF
  • Share:

NXP USA Inc. BAS316/ZLF

Manufacturer No:
BAS316/ZLF
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 215MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS316/ZLF is a high-speed switching diode produced by NXP USA Inc. This diode is designed for high-performance applications requiring fast switching times and low forward voltage drop. It is packaged in the SOD323 format, which is a surface-mount device, making it suitable for a wide range of electronic circuits. The BAS316/ZLF is compliant with the latest environmental standards, including ROHS and REACH directives, ensuring it is environmentally friendly and safe for use in various industries.

Key Specifications

ParameterConditionsMinTypMaxUnit
Forward Current (IF)---250mA
Reverse Voltage (VR)---100V
Forward Voltage (VF)IF = 1 mA--0.715V
Forward Voltage (VF)IF = 10 mA--0.855V
Forward Voltage (VF)IF = 150 mA--1.25V
Reverse Current (IR)VR = 25 V; Tj = 25 °C--30nA
Reverse Current (IR)VR = 80 V; Tj = 25 °C--0.5µA
Diode Capacitance (Cd)VR = 0 V; f = 1 MHz; Tj = 25 °C--1.5pF
Reverse Recovery Time (trr)IF = 10 mA; IR = 10 mA; RL = 100 Ω--4ns

Key Features

  • High-Speed Switching: The BAS316/ZLF is designed for high-speed switching applications, featuring a fast reverse recovery time of up to 4 ns.
  • Low Forward Voltage Drop: It has a low forward voltage drop, with typical values ranging from 0.715 V at 1 mA to 1.25 V at 150 mA.
  • High Reverse Voltage Withstand: The diode can withstand a maximum DC reverse voltage of 100 V.
  • Low Leakage Current: It has a low reverse current leakage of up to 0.5 µA at 80 V and 25 °C.
  • Environmental Compliance: Compliant with ROHS and REACH directives, ensuring environmental safety.
  • Surface Mount Package: Packaged in the SOD323 format, which is convenient for surface-mount technology (SMT) assembly.

Applications

  • Power Management: Suitable for various power management circuits due to its high-speed switching and low forward voltage drop.
  • Automotive Electronics: Can be used in automotive applications where high reliability and environmental compliance are crucial.
  • Signal Detection: Used in signal detection circuits to convert AC signals into DC electrical signals.
  • LED Lighting and Motor Drive: Applicable in LED lighting and motor drive circuits where fast switching and low energy loss are essential.

Q & A

  1. What is the maximum forward current of the BAS316/ZLF diode?
    The maximum forward current of the BAS316/ZLF diode is 250 mA.
  2. What is the reverse voltage withstand capability of the BAS316/ZLF?
    The BAS316/ZLF can withstand a maximum DC reverse voltage of 100 V.
  3. What is the typical forward voltage drop of the BAS316/ZLF at 10 mA?
    The typical forward voltage drop at 10 mA is 0.855 V.
  4. What is the reverse recovery time of the BAS316/ZLF?
    The reverse recovery time is up to 4 ns.
  5. Is the BAS316/ZLF compliant with environmental standards?
    Yes, it is compliant with ROHS and REACH directives.
  6. What is the package type of the BAS316/ZLF?
    The BAS316/ZLF is packaged in the SOD323 format.
  7. What are some common applications of the BAS316/ZLF?
    It is used in power management, automotive electronics, signal detection, LED lighting, and motor drive circuits.
  8. What is the maximum operating temperature of the BAS316/ZLF?
    The maximum operating temperature is 150 °C.
  9. How does the BAS316/ZLF handle high-frequency signals?
    The diode has a diode capacitance of up to 1.5 pF at 1 MHz, which helps in reducing noise and interference in high-frequency applications.
  10. Is the BAS316/ZLF suitable for surface-mount technology (SMT) assembly?
    Yes, it is designed for SMT assembly.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
475

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS316/ZLF BAS316/ZLX
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 215mA (DC) 215mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
PMEG45U10EPD146
PMEG45U10EPD146
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
S9S12G64ACLH
S9S12G64ACLH
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 64LQFP
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
LPC1764FBD100,551
LPC1764FBD100,551
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 100LQFP
LS1043AXE8QQB
LS1043AXE8QQB
NXP USA Inc.
QORIQ 4XCPU 64-BIT ARM ARCH 1.
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
TJA1028T/3V3/10:11
TJA1028T/3V3/10:11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
MPX53GP
MPX53GP
NXP USA Inc.
SENSOR GAUGE PRESSURE 7 PSI MAX