1N4007GPE-E3/53
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Vishay General Semiconductor - Diodes Division 1N4007GPE-E3/53

Manufacturer No:
1N4007GPE-E3/53
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GPE-E3/53 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is designed for use in power supplies, inverters, converters, and as freewheeling diodes in consumer and industrial settings.

Key Specifications

Parameter Value Unit
Maximum DC Reverse Voltage (Vr) 1000 V
Maximum RMS Voltage (Vrms) 700 V
Maximum Average Forward Rectified Current (If(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A
Maximum Instantaneous Forward Voltage (Vf) at 1 A 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage 5.0 μA @ 1000 V μA
Typical Reverse Recovery Time (trr) 2.0 μs μs
Typical Junction Capacitance 8.0 pF @ 4 V, 1 MHz pF
Operating Junction and Storage Temperature Range -50°C to 150°C °C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole

Key Features

  • High Voltage Handling: The 1N4007GPE-E3/53 can handle a maximum DC reverse voltage of 1000 V, making it suitable for high-voltage applications.
  • High Current Capability: It has a maximum average forward rectified current of 1.0 A, which is adequate for many power supply and converter applications.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 V at 1 A, reducing power losses in the circuit.
  • Fast Recovery Time: With a typical reverse recovery time of 2.0 μs, this diode is suitable for applications requiring fast switching times.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -50°C to 150°C, making it versatile for various environmental conditions.
  • Compact Packaging: Available in DO-204AL (DO-41) and axial packages, it is suitable for both through-hole and space-constrained designs.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage high-voltage and high-current flows.
  • Freewheeling Diodes: Acts as freewheeling diodes in motor control circuits and other applications where back-EMF needs to be managed.
  • Consumer Electronics: Found in various consumer electronics such as TVs, audio equipment, and other household appliances.
  • Industrial and Automotive Systems: Used in industrial control systems, automotive systems, and other high-reliability applications.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4007GPE-E3/53 diode?

    The maximum DC reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the typical reverse recovery time of the 1N4007GPE-E3/53?

    The typical reverse recovery time is 2.0 μs.

  4. What is the maximum instantaneous forward voltage at 1 A?

    The maximum instantaneous forward voltage at 1 A is 1.1 V.

  5. What are the common applications of the 1N4007GPE-E3/53 diode?

    Common applications include power supplies, inverters, converters, and as freewheeling diodes in consumer and industrial systems.

  6. What is the operating temperature range of this diode?

    The operating temperature range is -50°C to 150°C.

  7. What type of packaging is available for the 1N4007GPE-E3/53?

    The diode is available in DO-204AL (DO-41) and axial packages.

  8. What is the maximum peak forward surge current of the 1N4007GPE-E3/53?

    The maximum peak forward surge current is 30 A.

  9. Is the 1N4007GPE-E3/53 RoHS compliant?
  10. What is the typical junction capacitance of this diode?

    The typical junction capacitance is 8.0 pF at 4 V, 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number 1N4007GPE-E3/53 1N4007GPE-E3/54 1N4007GPE-E3/73 1N4007GPEHE3/53 1N4007GP-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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