1N4004GPEHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPEHE3/54

Manufacturer No:
1N4004GPEHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPEHE3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is designed to handle high voltage and current requirements, making it suitable for a wide range of uses including power supplies, inverters, converters, and freewheeling diodes.

Key Specifications

Parameter Value Unit
Part Number 1N4004GPEHE3/54
Manufacturer Vishay General Semiconductor - Diodes Division
Description DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max) 400 V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A V @ A
Current - Average Rectified (Io) 1A A
Peak Forward Surge Current (IFSM) 30A (8.3ms single half sine-wave) A
Reverse Recovery Time (trr) 2µs µs
Junction Capacitance 8pF @ 4V, 1MHz pF @ V, MHz
Operating Temperature - Junction -65°C ~ 175°C °C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • High Voltage Handling: The diode can handle a maximum DC reverse voltage of 400V, making it suitable for high-voltage applications.
  • High Current Capability: It has a maximum average forward rectified current of 1A, which is adequate for various power supply and converter applications.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1.1V at 1A, reducing power losses in the circuit.
  • Fast Recovery Time: With a typical reverse recovery time of 2µs, it ensures efficient switching and minimizes losses in high-frequency applications.
  • Wide Operating Temperature Range: The diode operates over a junction temperature range of -65°C to 175°C, making it reliable in diverse environmental conditions.
  • Lead-Free and RoHS Compliant: The diode is lead-free and RoHS compliant, ensuring it meets current environmental and safety standards.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage high-voltage and high-current flows.
  • Freewheeling Diodes: Acts as a freewheeling diode in motor control circuits and other inductive load applications.
  • General Rectification: Suitable for general-purpose rectification in various electronic devices and systems.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4004GPEHE3/54 diode?

    The maximum DC reverse voltage is 400V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1A.

  3. What is the typical reverse recovery time of the 1N4004GPEHE3/54 diode?

    The typical reverse recovery time is 2µs.

  4. What is the operating junction temperature range of this diode?

    The operating junction temperature range is -65°C to 175°C.

  5. Is the 1N4004GPEHE3/54 diode lead-free and RoHS compliant?
  6. What is the package type of the 1N4004GPEHE3/54 diode?

    The package type is DO-204AL (DO-41), Axial.

  7. What is the maximum forward voltage drop of this diode at 1A?

    The maximum forward voltage drop is 1.1V at 1A.

  8. What is the peak forward surge current rating of the 1N4004GPEHE3/54 diode?

    The peak forward surge current rating is 30A (8.3ms single half sine-wave).

  9. What are some common applications of the 1N4004GPEHE3/54 diode?
  10. What is the junction capacitance of the 1N4004GPEHE3/54 diode at 4V and 1MHz?

    The junction capacitance is 8pF at 4V and 1MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
248

Please send RFQ , we will respond immediately.

Same Series
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4003GPE-E3/54
1N4003GPE-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4005GP-E3/73
1N4005GP-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4002GPE-E3/73
1N4002GPE-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4003GPEHE3/54
1N4003GPEHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4007GPHE3/54
1N4007GPHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4004GPE-E3/93
1N4004GPE-E3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/53
1N4007GPEHE3/53
DIODE GEN PURP 1KV 1A DO204AL
1N5407GP-E3/73
1N5407GP-E3/73
DIODE GEN PURP 800V 3A DO201AD
1N4004GPE-E3/91
1N4004GPE-E3/91
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number 1N4004GPEHE3/54 1N4004GPHE3/54 1N4005GPEHE3/54 1N4003GPEHE3/54 1N4004GPE-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL

Related Product By Brand

SM15T36A-E3/57T
SM15T36A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T36AHE3_A/H
SM15T36AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
1.5KE6.8A-E3/73
1.5KE6.8A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
BAS70-05-G3-18
BAS70-05-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
1N4148W-G3-08
1N4148W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
MURS260-M3/52T
MURS260-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
SS14HE3/5AT
SS14HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
1N4007GPHM3/54
1N4007GPHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84B18-E3-08
BZX84B18-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3