1N4004GPEHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPEHE3/54

Manufacturer No:
1N4004GPEHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPEHE3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is designed to handle high voltage and current requirements, making it suitable for a wide range of uses including power supplies, inverters, converters, and freewheeling diodes.

Key Specifications

Parameter Value Unit
Part Number 1N4004GPEHE3/54
Manufacturer Vishay General Semiconductor - Diodes Division
Description DIODE GEN PURP 400V 1A DO204AL
Voltage - DC Reverse (Vr) (Max) 400 V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A V @ A
Current - Average Rectified (Io) 1A A
Peak Forward Surge Current (IFSM) 30A (8.3ms single half sine-wave) A
Reverse Recovery Time (trr) 2µs µs
Junction Capacitance 8pF @ 4V, 1MHz pF @ V, MHz
Operating Temperature - Junction -65°C ~ 175°C °C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • High Voltage Handling: The diode can handle a maximum DC reverse voltage of 400V, making it suitable for high-voltage applications.
  • High Current Capability: It has a maximum average forward rectified current of 1A, which is adequate for various power supply and converter applications.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1.1V at 1A, reducing power losses in the circuit.
  • Fast Recovery Time: With a typical reverse recovery time of 2µs, it ensures efficient switching and minimizes losses in high-frequency applications.
  • Wide Operating Temperature Range: The diode operates over a junction temperature range of -65°C to 175°C, making it reliable in diverse environmental conditions.
  • Lead-Free and RoHS Compliant: The diode is lead-free and RoHS compliant, ensuring it meets current environmental and safety standards.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage high-voltage and high-current flows.
  • Freewheeling Diodes: Acts as a freewheeling diode in motor control circuits and other inductive load applications.
  • General Rectification: Suitable for general-purpose rectification in various electronic devices and systems.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4004GPEHE3/54 diode?

    The maximum DC reverse voltage is 400V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1A.

  3. What is the typical reverse recovery time of the 1N4004GPEHE3/54 diode?

    The typical reverse recovery time is 2µs.

  4. What is the operating junction temperature range of this diode?

    The operating junction temperature range is -65°C to 175°C.

  5. Is the 1N4004GPEHE3/54 diode lead-free and RoHS compliant?
  6. What is the package type of the 1N4004GPEHE3/54 diode?

    The package type is DO-204AL (DO-41), Axial.

  7. What is the maximum forward voltage drop of this diode at 1A?

    The maximum forward voltage drop is 1.1V at 1A.

  8. What is the peak forward surge current rating of the 1N4004GPEHE3/54 diode?

    The peak forward surge current rating is 30A (8.3ms single half sine-wave).

  9. What are some common applications of the 1N4004GPEHE3/54 diode?
  10. What is the junction capacitance of the 1N4004GPEHE3/54 diode at 4V and 1MHz?

    The junction capacitance is 8pF at 4V and 1MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
248

Please send RFQ , we will respond immediately.

Same Series
1N4007GPE-E3/54
1N4007GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4006GP-E3/54
1N4006GP-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4004GPE-E3/73
1N4004GPE-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/73
1N4007GPHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPHE3/54
1N4002GPHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL
1N4004GPE-E3/93
1N4004GPE-E3/93
DIODE GEN PURP 400V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GP-E3/53
1N4007GP-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4004GPEHE3/54 1N4004GPHE3/54 1N4005GPEHE3/54 1N4003GPEHE3/54 1N4004GPE-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15

Related Product By Brand

SM6T6V8AHE3_A/H
SM6T6V8AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T22AHE3/9AT
SM15T22AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T200AHE3/57T
SM15T200AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T68CAHM3/I
SM15T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T36CAHM3/I
SM6T36CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
BAV21-TR
BAV21-TR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA DO35
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
BZX384B12-G3-08
BZX384B12-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 200MW SOD323
BZX84B3V6-E3-18
BZX84B3V6-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 300MW SOT23-3
BZX384C75-HE3-08
BZX384C75-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX84B12-HE3-08
BZX84B12-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3