1N4004GPE-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4004GPE-E3/54

Manufacturer No:
1N4004GPE-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GPE-E3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring rectification of power supplies, inverters, converters, and freewheeling diodes. The 1N4004GPE-E3/54 is specifically designed to handle a maximum repetitive peak reverse voltage of 400 V and is suitable for consumer and industrial applications.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 400
Maximum RMS Voltage VRMS V 280
Maximum DC Blocking Voltage VDC V 400
Maximum Average Forward Rectified Current IF(AV) A 1.0
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM A 30
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM A 45
Maximum Instantaneous Forward Voltage VF V 1.1
Maximum DC Reverse Current at Rated DC Blocking Voltage IR μA 5.0
Operating Junction and Storage Temperature Range TJ, TSTG °C -65 to +175
Package DO-41 (DO-204AL)

Key Features

  • High Surge Current Capability: The diode can handle peak forward surge currents up to 45 A for a 1 ms square waveform.
  • Low Forward Voltage Drop: The maximum instantaneous forward voltage is 1.1 V at 1.0 A.
  • High Reverse Voltage Rating: The diode has a maximum repetitive peak reverse voltage of 400 V.
  • Wide Operating Temperature Range: The diode operates over a temperature range of -65°C to +175°C.
  • RoHS Compliant: The E3 suffix indicates that the device is RoHS-compliant and meets JESD 201 class 1A whisker test standards.
  • Flammability Rating: The molding compound meets UL 94 V-0 flammability rating.

Applications

  • Power Supplies: Used in the rectification of power supplies to convert AC to DC.
  • Inverters and Converters: Suitable for use in inverters and converters due to its high surge current capability.
  • Freewheeling Diodes: Often used as freewheeling diodes to protect against back EMF in inductive loads.
  • Consumer and Industrial Electronics: Used in various consumer and industrial electronic devices requiring reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GPE-E3/54 diode?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current for this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating for the 1N4004GPE-E3/54?

    The peak forward surge current rating is 30 A for an 8.3 ms single half sine-wave and 45 A for a 1 ms square waveform.

  4. What is the operating temperature range of the 1N4004GPE-E3/54 diode?

    The operating temperature range is -65°C to +175°C.

  5. Is the 1N4004GPE-E3/54 RoHS compliant?
  6. What is the package type of the 1N4004GPE-E3/54 diode?

    The package type is DO-41 (DO-204AL).

  7. What is the maximum instantaneous forward voltage of the diode?

    The maximum instantaneous forward voltage is 1.1 V at 1.0 A.

  8. What are some common applications of the 1N4004GPE-E3/54 diode?

    Common applications include power supplies, inverters, converters, and freewheeling diodes in consumer and industrial electronics.

  9. Does the 1N4004GPE-E3/54 meet any specific flammability ratings?
  10. What is the typical thermal resistance of the 1N4004GPE-E3/54 diode?

    The typical thermal resistance from junction to ambient is 55 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.54
719

Please send RFQ , we will respond immediately.

Same Series
1N4004GP-E3/54
1N4004GP-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4002GPE-E3/54
1N4002GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4004GPHE3/73
1N4004GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPHE3/73
1N4005GPHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4006GPHE3/73
1N4006GPHE3/73
DIODE GEN PURP 800V 1A DO204AL
1N4007GPHE3/73
1N4007GPHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4005GPE-E3/53
1N4005GPE-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHE3/53
1N4007GPHE3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4004GPE-E3/54 1N4005GPE-E3/54 1N4004GPEHE3/54 1N4003GPE-E3/54 1N4004GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T220CAHM3_A/I
SM6T220CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T6V8CAHM3_A/H
SM6T6V8CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T36AHE3_A/I
SM15T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T39CAHE3/5B
SM6T39CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SMBJ5.0CAHM3/I
SMBJ5.0CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
BAT54C-BO-G3-18
BAT54C-BO-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHTKY DL 30V 200MA SOT23
MURS120-E3/5BT
MURS120-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX84C56-E3-18
BZX84C56-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 56V 300MW SOT23-3
BZX84C27-G3-08
BZX84C27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3