1N4002GPEHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPEHE3/73

Manufacturer No:
1N4002GPEHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPEHE3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical applications. It is designed for use in power supplies, inverters, converters, and freewheeling diode applications, making it a staple in both industrial and consumer electronics.

Key Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)100V
Maximum RMS Voltage (VRMS)70V
Maximum DC Blocking Voltage (VDC)100V
Maximum Average Forward Rectified Current (IF(AV))1A
Peak Forward Surge Current (IFSM)30A
Forward Voltage (VF) @ IF1.1V @ 1A
Reverse Recovery Time (trr)2μs
Reverse Leakage Current @ Vr5μA @ 100V
Junction Capacitance @ Vr, F8pF @ 4V, 1MHz
Operating Temperature - Junction-65°C to 175°C
Package / CaseDO-204AL (DO-41), Axial
Mounting TypeThrough Hole

Key Features

  • High Reliability: The 1N4002GPEHE3/73 is known for its high reliability and durability in various electrical applications.
  • Standard Recovery Time: It has a standard recovery time greater than 500 ns, making it suitable for a wide range of applications.
  • Low Forward Voltage: The diode has a maximum forward voltage of 1.1 V at 1 A, which is efficient for power rectification.
  • Low Reverse Leakage: The reverse leakage current is 5 μA at 100 V, which is negligible and beneficial for most applications.
  • High Peak Forward Surge Current: It can handle a peak forward surge current of 30 A, making it robust against transient conditions.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage the flow of electrical current.
  • Freewheeling Diodes: Acts as a freewheeling diode to protect circuits from back EMF.
  • Protection Devices: Used to prevent reverse polarity problems and protect against voltage spikes.
  • Rectifier Circuits: Utilized in half-wave and full-wave rectifier circuits.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GPEHE3/73 diode?
    The maximum repetitive peak reverse voltage is 100 V.
  2. What is the maximum average forward rectified current of this diode?
    The maximum average forward rectified current is 1 A.
  3. What is the forward voltage drop at 1 A for this diode?
    The forward voltage drop at 1 A is 1.1 V.
  4. What is the peak forward surge current rating of the 1N4002GPEHE3/73 diode?
    The peak forward surge current rating is 30 A.
  5. What is the reverse recovery time of this diode?
    The reverse recovery time is 2 μs.
  6. What is the operating junction temperature range for this diode?
    The operating junction temperature range is -65°C to 175°C.
  7. In what package is the 1N4002GPEHE3/73 diode available?
    The diode is available in the DO-204AL (DO-41) and axial packages.
  8. What is the typical application of the 1N4002GPEHE3/73 diode?
    Typical applications include power supplies, inverters, converters, and as freewheeling diodes.
  9. How much reverse leakage current does the 1N4002GPEHE3/73 diode have at 100 V?
    The reverse leakage current at 100 V is 5 μA.
  10. What is the junction capacitance of the 1N4002GPEHE3/73 diode at 4 V and 1 MHz?
    The junction capacitance at 4 V and 1 MHz is 8 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
18

Please send RFQ , we will respond immediately.

Same Series
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4003GP-E3/54
1N4003GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4001GPE-E3/54
1N4001GPE-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-E3/54
1N4002GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4007GP-E3/73
1N4007GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/73
1N4001GPEHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4006GP-E3/73
1N4006GP-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4007GPHE3/73
1N4007GPHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4003GPHE3/54
1N4003GPHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4006GPHE3/54
1N4006GPHE3/54
DIODE GEN PURP 800V 1A DO204AL
1N4002GPE-E3/91
1N4002GPE-E3/91
DIODE GEN PURP 100V 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL

Similar Products

Part Number 1N4002GPEHE3/73 1N4002GPHE3/73 1N4001GPEHE3/73 1N4002GPE-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 50 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523

Related Product By Brand

SMA6J5.0A-E3/61
SMA6J5.0A-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 13.4VC DO214AC
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAS70-04-E3-08
BAS70-04-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAV23C-G3-08
BAV23C-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
MBR10100CT-E3/4W
MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
MURD620CTTR
MURD620CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
BAT43W-G3-18
BAT43W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT54WS-G3-08
BAT54WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
ZM4742A-GS18
ZM4742A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 1W DO213AB
BZX84C6V2-HE3-08
BZX84C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323