BAS286-GS08
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Vishay General Semiconductor - Diodes Division BAS286-GS08

Manufacturer No:
BAS286-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 50V 200MA SOD80
Delivery:
Payment:
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Product Introduction

Overview

The BAS286-GS08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for applications where low forward voltage drop and fast switching times are crucial. It is part of the QuadroMELF (SOD-80) package series, known for its compact size and thermal efficiency. The BAS286-GS08 is suitable for a wide range of electronic systems, including general-purpose switching, protection circuits, and low-current applications with low supply voltages.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse Voltage-VR50V
Peak Forward Surge Currenttp = 10 msIFSM5A
Repetitive Peak Forward Currenttp ≤ 1 sIFRM500mA
Forward Continuous Current-IF200mA
Average Forward Current-IFAV200mA
Forward VoltageIF = 100 mAVF900mV
Reverse CurrentVR = 40 VIR5μA
Diode CapacitanceVR = 1 V, f = 1 MHzCD8pF
Thermal Resistance Junction to Ambient AirOn PC board 50 mm x 50 mm x 1.6 mmRthJA320K/W
Junction Temperature-Tj125°C
Storage Temperature Range-Tstg-65 to +150°C

Key Features

  • Low forward voltage drop, with VF as low as 300 mV at IF = 0.1 mA and 900 mV at IF = 100 mA.
  • Very low switching time, making it suitable for high-frequency applications.
  • Low capacitance of 8 pF at VR = 1 V and f = 1 MHz.
  • Low leakage current, with IR of 5 μA at VR = 40 V.
  • Integrated protection ring against static discharge.
  • Compact QuadroMELF (SOD-80) package for surface mount applications.

Applications

  • General purpose and switching Schottky barrier diode applications.
  • HF-detector circuits.
  • Protection circuits.
  • Diodes for low currents with low supply voltages.
  • Small battery chargers.
  • Power supplies.
  • DC/DC converters for notebooks and other portable devices.

Q & A

  1. What is the maximum reverse voltage of the BAS286-GS08?
    The maximum reverse voltage (VR) is 50 V.
  2. What is the peak forward surge current of the BAS286-GS08?
    The peak forward surge current (IFSM) is 5 A for tp = 10 ms.
  3. What is the forward continuous current rating of the BAS286-GS08?
    The forward continuous current (IF) is 200 mA.
  4. What is the typical forward voltage drop at 100 mA?
    The typical forward voltage drop (VF) at IF = 100 mA is 900 mV.
  5. What is the reverse current at 40 V?
    The reverse current (IR) at VR = 40 V is 5 μA.
  6. What is the diode capacitance at 1 MHz?
    The diode capacitance (CD) at VR = 1 V and f = 1 MHz is 8 pF.
  7. What is the thermal resistance junction to ambient air?
    The thermal resistance junction to ambient air (RthJA) is 320 K/W on a PC board 50 mm x 50 mm x 1.6 mm.
  8. What is the junction temperature rating?
    The junction temperature (Tj) rating is 125 °C.
  9. What is the storage temperature range?
    The storage temperature range (Tstg) is -65 to +150 °C.
  10. In what package is the BAS286-GS08 available?
    The BAS286-GS08 is available in the QuadroMELF (SOD-80) package for surface mount applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:900 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 40 V
Capacitance @ Vr, F:8pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:-65°C ~ 150°C
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Same Series
BAS286-GS08
BAS286-GS08
DIODE SCHOTTKY 50V 200MA SOD80

Similar Products

Part Number BAS286-GS08 BAS286-GS18 BAS281-GS08 BAS282-GS08 BAS283-GS08 BAS285-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 40 V 50 V 60 V 30 V
Current - Average Rectified (Io) 200mA 200mA 30mA 30mA 30mA 200mA
Voltage - Forward (Vf) (Max) @ If 900 mV @ 100 mA 900 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 40 V 5 µA @ 40 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V 2.3 µA @ 25 V
Capacitance @ Vr, F 8pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

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