BAS282-GS08
  • Share:

Vishay General Semiconductor - Diodes Division BAS282-GS08

Manufacturer No:
BAS282-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 50V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS282-GS08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS282 series, known for its low forward voltage drop, low leakage current, and very low switching time, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

ParameterSymbolValueUnit
Reverse VoltageVR50V
Peak Forward Surge CurrentIFSM500mA
Repetitive Peak Forward CurrentIFRM150mA
Forward CurrentIF30mA
Forward VoltageVF330 mV @ 0.1 mA, 400 mV @ 10 mAmV
Junction to Ambient Thermal ResistanceRthJA320K/W
Junction TemperatureTj-65 to +150°C
Storage Temperature RangeTstg-65 to +150°C
PackageQuadroMELF (SOD-80)
WeightApprox. 34 mg

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time
  • Material categorization for compliance with various standards (see www.vishay.com/doc?99912)

Applications

  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS282-GS08? The reverse voltage rating is 50 V.
  2. What is the maximum forward current for the BAS282-GS08? The maximum forward current is 30 mA.
  3. What is the typical forward voltage drop at 0.1 mA? The typical forward voltage drop at 0.1 mA is 330 mV.
  4. What is the junction to ambient thermal resistance? The junction to ambient thermal resistance is 320 K/W.
  5. What are the storage temperature ranges for the BAS282-GS08? The storage temperature range is -65°C to +150°C.
  6. What type of package does the BAS282-GS08 come in? The BAS282-GS08 comes in a QuadroMELF (SOD-80) package.
  7. What are some common applications for the BAS282-GS08? Common applications include general purpose and switching Schottky barrier diode, HF-detector, protection circuit, small battery charger, power supplies, and DC/DC converter for notebooks.
  8. Does the BAS282-GS08 have integrated protection against static discharge? Yes, it has an integrated protection ring against static discharge.
  9. What is the weight of the BAS282-GS08? The weight is approximately 34 mg.
  10. How is the BAS282-GS08 packaged for distribution? It is packaged in tape and reel (GS08 or GS18 options).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.06
4,809

Please send RFQ , we will respond immediately.

Same Series
BA282-TAP
BA282-TAP
RF DIODE STANDARD 35V DO35
BA283-TAP
BA283-TAP
RF DIODE STANDARD 35V DO35
BA282-TR
BA282-TR
RF DIODE STANDARD 35V DO35
BA283-TR
BA283-TR
RF DIODE STANDARD 35V DO35
BAS281-GS08
BAS281-GS08
DIODE SCHOTTKY 40V 30MA SOD80
BAS281-GS18
BAS281-GS18
DIODE SCHOTTKY 40V 30MA SOD80
BAS282-GS18
BAS282-GS18
DIODE SCHOTTKY 50V 30MA SOD80
BAS282-GS08
BAS282-GS08
DIODE SCHOTTKY 50V 30MA SOD80

Similar Products

Part Number BAS282-GS08 BAS286-GS08 BAS285-GS08 BAS282-GS18 BAS283-GS08 BAS281-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 30 V 50 V 60 V 40 V
Current - Average Rectified (Io) 30mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 900 mV @ 100 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 5 µA @ 40 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

SM6T36A-M3/52
SM6T36A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T68A-M3/52
SM6T68A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T10AHE3_A/H
SM6T10AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T18A-E3/5B
SM6T18A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
1.5KE6.8A-E3/73
1.5KE6.8A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
MUR120/54
MUR120/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
BZX84C30-HE3-08
BZX84C30-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84B6V2-E3-18
BZX84B6V2-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3
BZX84C15-G3-18
BZX84C15-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 300MW SOT23-3
BZX84C10-G3-08
BZX84C10-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3