BAS282-GS08
  • Share:

Vishay General Semiconductor - Diodes Division BAS282-GS08

Manufacturer No:
BAS282-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 50V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS282-GS08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the BAS282 series, known for its low forward voltage drop, low leakage current, and very low switching time, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

ParameterSymbolValueUnit
Reverse VoltageVR50V
Peak Forward Surge CurrentIFSM500mA
Repetitive Peak Forward CurrentIFRM150mA
Forward CurrentIF30mA
Forward VoltageVF330 mV @ 0.1 mA, 400 mV @ 10 mAmV
Junction to Ambient Thermal ResistanceRthJA320K/W
Junction TemperatureTj-65 to +150°C
Storage Temperature RangeTstg-65 to +150°C
PackageQuadroMELF (SOD-80)
WeightApprox. 34 mg

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time
  • Material categorization for compliance with various standards (see www.vishay.com/doc?99912)

Applications

  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS282-GS08? The reverse voltage rating is 50 V.
  2. What is the maximum forward current for the BAS282-GS08? The maximum forward current is 30 mA.
  3. What is the typical forward voltage drop at 0.1 mA? The typical forward voltage drop at 0.1 mA is 330 mV.
  4. What is the junction to ambient thermal resistance? The junction to ambient thermal resistance is 320 K/W.
  5. What are the storage temperature ranges for the BAS282-GS08? The storage temperature range is -65°C to +150°C.
  6. What type of package does the BAS282-GS08 come in? The BAS282-GS08 comes in a QuadroMELF (SOD-80) package.
  7. What are some common applications for the BAS282-GS08? Common applications include general purpose and switching Schottky barrier diode, HF-detector, protection circuit, small battery charger, power supplies, and DC/DC converter for notebooks.
  8. Does the BAS282-GS08 have integrated protection against static discharge? Yes, it has an integrated protection ring against static discharge.
  9. What is the weight of the BAS282-GS08? The weight is approximately 34 mg.
  10. How is the BAS282-GS08 packaged for distribution? It is packaged in tape and reel (GS08 or GS18 options).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.06
4,809

Please send RFQ , we will respond immediately.

Same Series
BA282-TAP
BA282-TAP
RF DIODE STANDARD 35V DO35
BA283-TAP
BA283-TAP
RF DIODE STANDARD 35V DO35
BA282-TR
BA282-TR
RF DIODE STANDARD 35V DO35
BA283-TR
BA283-TR
RF DIODE STANDARD 35V DO35
BAS281-GS08
BAS281-GS08
DIODE SCHOTTKY 40V 30MA SOD80
BAS281-GS18
BAS281-GS18
DIODE SCHOTTKY 40V 30MA SOD80
BAS282-GS18
BAS282-GS18
DIODE SCHOTTKY 50V 30MA SOD80
BAS282-GS08
BAS282-GS08
DIODE SCHOTTKY 50V 30MA SOD80

Similar Products

Part Number BAS282-GS08 BAS286-GS08 BAS285-GS08 BAS282-GS18 BAS283-GS08 BAS281-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 30 V 50 V 60 V 40 V
Current - Average Rectified (Io) 30mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 900 mV @ 100 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 5 µA @ 40 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T30CA-M3/52
SM6T30CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T15AHM3_A/I
SM15T15AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM15T18AHM3_A/I
SM15T18AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T150CAHE3_A/I
SM15T150CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
BAS70-06-E3-08
BAS70-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAS85-GS08
BAS85-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD80
SS14HE3_B/I
SS14HE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BZX384C3V3-HE3-08
BZX384C3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84B24-E3-08
BZX84B24-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3