BAS285-GS08
  • Share:

Vishay General Semiconductor - Diodes Division BAS285-GS08

Manufacturer No:
BAS285-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS285-GS08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for applications where a very low forward voltage drop is essential. It features a QuadroMELF (SOD-80) package and is known for its integrated protection ring against static discharge. The BAS285-GS08 is suitable for various electronic circuits requiring low forward voltage and high efficiency.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 30 V
Peak Forward Surge Current tp = 10 ms IFSM 5 A
Repetitive Peak Forward Current tp ≤ 1 s IFRM 300 mA
Forward Current - IF 200 mA
Average Forward Current - IFAV 200 mA
Junction to Ambient Air Thermal Resistance On PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C
Forward Voltage IF = 100 mA VF 800 mV
Reverse Current VR = 25 V, tp = 300 μs IR 2.3 μA
Diode Capacitance VR = 1 V, f = 1 MHz CD 10 pF

Key Features

  • Integrated protection ring against static discharge
  • Very low forward voltage drop
  • Low capacitance
  • Low leakage current
  • Very low switching time
  • Material categorization compliant with various standards (see www.vishay.com/doc?99912 for details)
  • QuadroMELF (SOD-80) package
  • AEC-Q101 qualified for automotive applications
  • ROHS3 compliant and REACH unaffected

Applications

  • Applications where a very low forward voltage is required
  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the maximum reverse voltage of the BAS285-GS08?

    The maximum reverse voltage (VR) of the BAS285-GS08 is 30 V.

  2. What is the typical forward voltage drop at 100 mA?

    The typical forward voltage drop (VF) at 100 mA is 800 mV.

  3. What is the peak forward surge current rating?

    The peak forward surge current (IFSM) is 5 A for tp = 10 ms.

  4. What is the junction to ambient air thermal resistance?

    The junction to ambient air thermal resistance (RthJA) is 320 K/W on a PC board 50 mm x 50 mm x 1.6 mm.

  5. What is the storage temperature range for the BAS285-GS08?

    The storage temperature range (Tstg) is -65 to +150 °C.

  6. Does the BAS285-GS08 have integrated protection against static discharge?
  7. What is the typical reverse current at 25 V?

    The typical reverse current (IR) at VR = 25 V is 2.3 μA.

  8. What is the diode capacitance at 1 V and 1 MHz?

    The diode capacitance (CD) at VR = 1 V and f = 1 MHz is 10 pF.

  9. Is the BAS285-GS08 AEC-Q101 qualified?
  10. What package type does the BAS285-GS08 use?

    The BAS285-GS08 uses a QuadroMELF (SOD-80) package.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2.3 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.43
2,238

Please send RFQ , we will respond immediately.

Same Series
BAS285-GS18
BAS285-GS18
DIODE SCHOTTKY 30V 200MA SOD80

Similar Products

Part Number BAS285-GS08 BAS286-GS08 BAS285-GS18 BAS281-GS08 BAS282-GS08 BAS283-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 30 V 40 V 50 V 60 V
Current - Average Rectified (Io) 200mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 900 mV @ 100 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 2.3 µA @ 25 V 5 µA @ 40 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

SMBJ5.0CA-E3/5B
SMBJ5.0CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T6V8CAHE3_A/H
SM15T6V8CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM15T6V8AHM3/H
SM15T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX384C3V3-HE3-08
BZX384C3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX84C75-E3-18
BZX84C75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 300MW SOT23-3
BZX84B3V3-E3-18
BZX84B3V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3
BZX84C8V2-G3-08
BZX84C8V2-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3