BAS285-GS08
  • Share:

Vishay General Semiconductor - Diodes Division BAS285-GS08

Manufacturer No:
BAS285-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS285-GS08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for applications where a very low forward voltage drop is essential. It features a QuadroMELF (SOD-80) package and is known for its integrated protection ring against static discharge. The BAS285-GS08 is suitable for various electronic circuits requiring low forward voltage and high efficiency.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 30 V
Peak Forward Surge Current tp = 10 ms IFSM 5 A
Repetitive Peak Forward Current tp ≤ 1 s IFRM 300 mA
Forward Current - IF 200 mA
Average Forward Current - IFAV 200 mA
Junction to Ambient Air Thermal Resistance On PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C
Forward Voltage IF = 100 mA VF 800 mV
Reverse Current VR = 25 V, tp = 300 μs IR 2.3 μA
Diode Capacitance VR = 1 V, f = 1 MHz CD 10 pF

Key Features

  • Integrated protection ring against static discharge
  • Very low forward voltage drop
  • Low capacitance
  • Low leakage current
  • Very low switching time
  • Material categorization compliant with various standards (see www.vishay.com/doc?99912 for details)
  • QuadroMELF (SOD-80) package
  • AEC-Q101 qualified for automotive applications
  • ROHS3 compliant and REACH unaffected

Applications

  • Applications where a very low forward voltage is required
  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the maximum reverse voltage of the BAS285-GS08?

    The maximum reverse voltage (VR) of the BAS285-GS08 is 30 V.

  2. What is the typical forward voltage drop at 100 mA?

    The typical forward voltage drop (VF) at 100 mA is 800 mV.

  3. What is the peak forward surge current rating?

    The peak forward surge current (IFSM) is 5 A for tp = 10 ms.

  4. What is the junction to ambient air thermal resistance?

    The junction to ambient air thermal resistance (RthJA) is 320 K/W on a PC board 50 mm x 50 mm x 1.6 mm.

  5. What is the storage temperature range for the BAS285-GS08?

    The storage temperature range (Tstg) is -65 to +150 °C.

  6. Does the BAS285-GS08 have integrated protection against static discharge?
  7. What is the typical reverse current at 25 V?

    The typical reverse current (IR) at VR = 25 V is 2.3 μA.

  8. What is the diode capacitance at 1 V and 1 MHz?

    The diode capacitance (CD) at VR = 1 V and f = 1 MHz is 10 pF.

  9. Is the BAS285-GS08 AEC-Q101 qualified?
  10. What package type does the BAS285-GS08 use?

    The BAS285-GS08 uses a QuadroMELF (SOD-80) package.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2.3 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.43
2,238

Please send RFQ , we will respond immediately.

Same Series
BAS285-GS18
BAS285-GS18
DIODE SCHOTTKY 30V 200MA SOD80

Similar Products

Part Number BAS285-GS08 BAS286-GS08 BAS285-GS18 BAS281-GS08 BAS282-GS08 BAS283-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 30 V 40 V 50 V 60 V
Current - Average Rectified (Io) 200mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 900 mV @ 100 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 2.3 µA @ 25 V 5 µA @ 40 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523

Related Product By Brand

SM6T150AHM3_A/I
SM6T150AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T15CAHE3_A/H
SM6T15CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T22CAHM3_A/H
SM6T22CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM15T30AHM3_A/I
SM15T30AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T39CAHE3/52
SM6T39CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BAS40-00-G3-18
BAS40-00-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23
MURS260HE3_A/I
MURS260HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84B3V3-HE3-08
BZX84B3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3