BAS281-GS08
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Vishay General Semiconductor - Diodes Division BAS281-GS08

Manufacturer No:
BAS281-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS281-GS08 is a small signal Schottky barrier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general purpose and switching applications, offering several key advantages such as low forward voltage drop, low leakage current, and very low switching times. The BAS281-GS08 is part of the BAS281 series, which includes diodes with different reverse voltage ratings, but the BAS281 specifically has a reverse voltage rating of 40 V.

Key Specifications

Parameter Symbol Value Unit
Reverse Voltage VR 40 V
Peak Forward Surge Current IFSM 500 mA
Repetitive Peak Forward Current IFRM 150 mA
Forward Current IF 30 mA
Forward Voltage (IF = 0.1 mA) VF 330 mV
Reverse Current (VR = VRmax) IR 200 nA
Diode Capacitance (VR = 1 V, f = 1 MHz) CD 1.6 pF
Junction Temperature Tj 125 °C
Storage Temperature Range Tstg -65 to +150 °C
Junction to Ambient Thermal Resistance RthJA 320 K/W

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time

Applications

  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS281-GS08?

    The reverse voltage rating of the BAS281-GS08 is 40 V.

  2. What is the maximum forward current for the BAS281-GS08?

    The maximum forward current for the BAS281-GS08 is 30 mA.

  3. What is the typical forward voltage drop at 0.1 mA for the BAS281-GS08?

    The typical forward voltage drop at 0.1 mA for the BAS281-GS08 is 330 mV.

  4. What is the junction temperature limit for the BAS281-GS08?

    The junction temperature limit for the BAS281-GS08 is 125°C.

  5. What is the storage temperature range for the BAS281-GS08?

    The storage temperature range for the BAS281-GS08 is -65°C to +150°C.

  6. What are the typical applications of the BAS281-GS08?

    The BAS281-GS08 is typically used in general purpose and switching applications, HF-detectors, protection circuits, small battery chargers, power supplies, and DC/DC converters for notebooks.

  7. What is the thermal resistance from junction to ambient for the BAS281-GS08?

    The thermal resistance from junction to ambient for the BAS281-GS08 is 320 K/W on a PC board.

  8. Does the BAS281-GS08 have integrated protection against static discharge?
  9. What is the diode capacitance of the BAS281-GS08 at 1 MHz?

    The diode capacitance of the BAS281-GS08 at 1 MHz is 1.6 pF.

  10. What is the packaging type for the BAS281-GS08?

    The BAS281-GS08 is packaged in a QuadroMELF (SOD-80) case and is available in tape and reel configurations.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

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Similar Products

Part Number BAS281-GS08 BAS286-GS08 BAS285-GS08 BAS281-GS18 BAS282-GS08 BAS283-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 50 V 30 V 40 V 50 V 60 V
Current - Average Rectified (Io) 30mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 900 mV @ 100 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 5 µA @ 40 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

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