BAS281-GS08
  • Share:

Vishay General Semiconductor - Diodes Division BAS281-GS08

Manufacturer No:
BAS281-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS281-GS08 is a small signal Schottky barrier diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general purpose and switching applications, offering several key advantages such as low forward voltage drop, low leakage current, and very low switching times. The BAS281-GS08 is part of the BAS281 series, which includes diodes with different reverse voltage ratings, but the BAS281 specifically has a reverse voltage rating of 40 V.

Key Specifications

Parameter Symbol Value Unit
Reverse Voltage VR 40 V
Peak Forward Surge Current IFSM 500 mA
Repetitive Peak Forward Current IFRM 150 mA
Forward Current IF 30 mA
Forward Voltage (IF = 0.1 mA) VF 330 mV
Reverse Current (VR = VRmax) IR 200 nA
Diode Capacitance (VR = 1 V, f = 1 MHz) CD 1.6 pF
Junction Temperature Tj 125 °C
Storage Temperature Range Tstg -65 to +150 °C
Junction to Ambient Thermal Resistance RthJA 320 K/W

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time

Applications

  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS281-GS08?

    The reverse voltage rating of the BAS281-GS08 is 40 V.

  2. What is the maximum forward current for the BAS281-GS08?

    The maximum forward current for the BAS281-GS08 is 30 mA.

  3. What is the typical forward voltage drop at 0.1 mA for the BAS281-GS08?

    The typical forward voltage drop at 0.1 mA for the BAS281-GS08 is 330 mV.

  4. What is the junction temperature limit for the BAS281-GS08?

    The junction temperature limit for the BAS281-GS08 is 125°C.

  5. What is the storage temperature range for the BAS281-GS08?

    The storage temperature range for the BAS281-GS08 is -65°C to +150°C.

  6. What are the typical applications of the BAS281-GS08?

    The BAS281-GS08 is typically used in general purpose and switching applications, HF-detectors, protection circuits, small battery chargers, power supplies, and DC/DC converters for notebooks.

  7. What is the thermal resistance from junction to ambient for the BAS281-GS08?

    The thermal resistance from junction to ambient for the BAS281-GS08 is 320 K/W on a PC board.

  8. Does the BAS281-GS08 have integrated protection against static discharge?
  9. What is the diode capacitance of the BAS281-GS08 at 1 MHz?

    The diode capacitance of the BAS281-GS08 at 1 MHz is 1.6 pF.

  10. What is the packaging type for the BAS281-GS08?

    The BAS281-GS08 is packaged in a QuadroMELF (SOD-80) case and is available in tape and reel configurations.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.38
143

Please send RFQ , we will respond immediately.

Same Series
BA282-TAP
BA282-TAP
RF DIODE STANDARD 35V DO35
BA283-TAP
BA283-TAP
RF DIODE STANDARD 35V DO35
BA282-TR
BA282-TR
RF DIODE STANDARD 35V DO35
BA283-TR
BA283-TR
RF DIODE STANDARD 35V DO35
BAS281-GS08
BAS281-GS08
DIODE SCHOTTKY 40V 30MA SOD80
BAS281-GS18
BAS281-GS18
DIODE SCHOTTKY 40V 30MA SOD80
BAS282-GS18
BAS282-GS18
DIODE SCHOTTKY 50V 30MA SOD80
BAS282-GS08
BAS282-GS08
DIODE SCHOTTKY 50V 30MA SOD80

Similar Products

Part Number BAS281-GS08 BAS286-GS08 BAS285-GS08 BAS281-GS18 BAS282-GS08 BAS283-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 50 V 30 V 40 V 50 V 60 V
Current - Average Rectified (Io) 30mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 900 mV @ 100 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 5 µA @ 40 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 8pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T33CAHM3_A/I
SM6T33CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T30CAHE3_A/I
SM15T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM15T22CAHE3_A/I
SM15T22CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T200AHM3/H
SM15T200AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MUR120-E3/54
MUR120-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
BZX384C10-E3-08
BZX384C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323
BZX384B12-G3-08
BZX384B12-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 200MW SOD323
BZX84B22-HE3-08
BZX84B22-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84B24-G3-08
BZX84B24-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3
BZX84B4V7-G3-08
BZX84B4V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3