BAS281-GS18
  • Share:

Vishay General Semiconductor - Diodes Division BAS281-GS18

Manufacturer No:
BAS281-GS18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS281-GS18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose and switching applications, offering several key advantages such as low forward voltage drop, low leakage current, and very low switching times. The BAS281-GS18 is part of the BAS281 series, which includes diodes with different reverse voltage ratings, making it versatile for various circuit designs.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 40 V
Peak Forward Surge Current tp = 1 s IFSM 500 mA
Repetitive Peak Forward Current tp ≤ 1 s IFRM 150 mA
Forward Current - IF 30 mA
Forward Voltage IF = 0.1 mA VF 330 mV
Junction to Ambient Air Thermal Resistance On PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time
  • QuadroMELF (SOD-80) package
  • Weight: approximately 34 mg
  • Cathode band color: black

Applications

  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS281-GS18?

    The reverse voltage rating of the BAS281-GS18 is 40 V.

  2. What is the maximum forward current for the BAS281-GS18?

    The maximum forward current for the BAS281-GS18 is 30 mA.

  3. What is the typical forward voltage drop at 0.1 mA for the BAS281-GS18?

    The typical forward voltage drop at 0.1 mA for the BAS281-GS18 is 330 mV.

  4. What is the junction to ambient air thermal resistance for the BAS281-GS18?

    The junction to ambient air thermal resistance for the BAS281-GS18 is 320 K/W on a PC board 50 mm x 50 mm x 1.6 mm.

  5. What are the storage temperature range and junction temperature limits for the BAS281-GS18?

    The storage temperature range is -65 to +150 °C, and the junction temperature limit is 125 °C.

  6. What package type is used for the BAS281-GS18?

    The BAS281-GS18 is packaged in a QuadroMELF (SOD-80) case.

  7. What are some common applications for the BAS281-GS18?

    Common applications include general-purpose and switching Schottky barrier diode, HF-detector, protection circuit, small battery charger, power supplies, and DC/DC converters for notebooks.

  8. Does the BAS281-GS18 have built-in protection against static discharge?
  9. What is the weight of the BAS281-GS18?

    The weight of the BAS281-GS18 is approximately 34 mg.

  10. How is the cathode identified on the BAS281-GS18?

    The cathode is identified by a black band.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.06
5,905

Please send RFQ , we will respond immediately.

Same Series
BA282-TAP
BA282-TAP
RF DIODE STANDARD 35V DO35
BA283-TAP
BA283-TAP
RF DIODE STANDARD 35V DO35
BA282-TR
BA282-TR
RF DIODE STANDARD 35V DO35
BA283-TR
BA283-TR
RF DIODE STANDARD 35V DO35
BAS281-GS08
BAS281-GS08
DIODE SCHOTTKY 40V 30MA SOD80
BAS281-GS18
BAS281-GS18
DIODE SCHOTTKY 40V 30MA SOD80
BAS282-GS18
BAS282-GS18
DIODE SCHOTTKY 50V 30MA SOD80
BAS282-GS08
BAS282-GS08
DIODE SCHOTTKY 50V 30MA SOD80

Similar Products

Part Number BAS281-GS18 BAS285-GS18 BAS282-GS18 BAS283-GS18 BAS286-GS18 BAS281-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 30 V 50 V 60 V 50 V 40 V
Current - Average Rectified (Io) 30mA 200mA 30mA 30mA 200mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 900 mV @ 100 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 5 µA @ 40 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) -65°C ~ 150°C 125°C (Max)

Related Product By Categories

FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SMBJ5.0CA-E3/5B
SMBJ5.0CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
SM6T39AHE3_A/H
SM6T39AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
MBR10100CT-E3/4W
MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX84C47-E3-08
BZX84C47-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 300MW SOT23-3
BZX384C5V6-E3-08
BZX384C5V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 200MW SOD323
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84B3V3-HE3-08
BZX84B3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX384C11-G3-18
BZX384C11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323
BZX84B22-G3-18
BZX84B22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3