BAS281-GS18
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Vishay General Semiconductor - Diodes Division BAS281-GS18

Manufacturer No:
BAS281-GS18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAS281-GS18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose and switching applications, offering several key advantages such as low forward voltage drop, low leakage current, and very low switching times. The BAS281-GS18 is part of the BAS281 series, which includes diodes with different reverse voltage ratings, making it versatile for various circuit designs.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 40 V
Peak Forward Surge Current tp = 1 s IFSM 500 mA
Repetitive Peak Forward Current tp ≤ 1 s IFRM 150 mA
Forward Current - IF 30 mA
Forward Voltage IF = 0.1 mA VF 330 mV
Junction to Ambient Air Thermal Resistance On PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time
  • QuadroMELF (SOD-80) package
  • Weight: approximately 34 mg
  • Cathode band color: black

Applications

  • General purpose and switching Schottky barrier diode
  • HF-detector
  • Protection circuit
  • Diode for low currents with a low supply voltage
  • Small battery charger
  • Power supplies
  • DC/DC converter for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS281-GS18?

    The reverse voltage rating of the BAS281-GS18 is 40 V.

  2. What is the maximum forward current for the BAS281-GS18?

    The maximum forward current for the BAS281-GS18 is 30 mA.

  3. What is the typical forward voltage drop at 0.1 mA for the BAS281-GS18?

    The typical forward voltage drop at 0.1 mA for the BAS281-GS18 is 330 mV.

  4. What is the junction to ambient air thermal resistance for the BAS281-GS18?

    The junction to ambient air thermal resistance for the BAS281-GS18 is 320 K/W on a PC board 50 mm x 50 mm x 1.6 mm.

  5. What are the storage temperature range and junction temperature limits for the BAS281-GS18?

    The storage temperature range is -65 to +150 °C, and the junction temperature limit is 125 °C.

  6. What package type is used for the BAS281-GS18?

    The BAS281-GS18 is packaged in a QuadroMELF (SOD-80) case.

  7. What are some common applications for the BAS281-GS18?

    Common applications include general-purpose and switching Schottky barrier diode, HF-detector, protection circuit, small battery charger, power supplies, and DC/DC converters for notebooks.

  8. Does the BAS281-GS18 have built-in protection against static discharge?
  9. What is the weight of the BAS281-GS18?

    The weight of the BAS281-GS18 is approximately 34 mg.

  10. How is the cathode identified on the BAS281-GS18?

    The cathode is identified by a black band.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
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In Stock

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Similar Products

Part Number BAS281-GS18 BAS285-GS18 BAS282-GS18 BAS283-GS18 BAS286-GS18 BAS281-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 30 V 50 V 60 V 50 V 40 V
Current - Average Rectified (Io) 30mA 200mA 30mA 30mA 200mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 800 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 900 mV @ 100 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 2.3 µA @ 25 V 200 nA @ 200 V 200 nA @ 200 V 5 µA @ 40 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 10pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) -65°C ~ 150°C 125°C (Max)

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