BAS283-GS18
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Vishay General Semiconductor - Diodes Division BAS283-GS18

Manufacturer No:
BAS283-GS18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 60V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAS283-GS18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general purpose and switching applications, offering several key advantages such as low forward voltage drop, low leakage current, and very low switching times. The BAS283-GS18 is part of the BAS281, BAS282, and BAS283 series, each differentiated by their reverse voltage ratings.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 60 V
Peak Forward Surge Current tp = 1 s IFSM 500 mA
Repetitive Peak Forward Current tp ≤ 1 s IFRM 150 mA
Forward Current - IF 30 mA
Forward Voltage IF = 0.1 mA VF 330 mV
Junction to Ambient Air Thermal Resistance On PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time
  • QuadroMELF (SOD-80) case with a weight of approximately 34 mg
  • Available in tape and reel packaging (GS18 and GS08 options)

Applications

  • General purpose and switching Schottky barrier diode applications
  • HF-detector circuits
  • Protection circuits
  • Diode for low currents with low supply voltage
  • Small battery chargers
  • Power supplies
  • DC/DC converters for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS283-GS18?

    The reverse voltage rating of the BAS283-GS18 is 60 V.

  2. What is the peak forward surge current of the BAS283-GS18?

    The peak forward surge current is 500 mA for a duration of 1 second.

  3. What is the typical forward voltage drop of the BAS283-GS18 at 0.1 mA?

    The typical forward voltage drop at 0.1 mA is 330 mV.

  4. What is the junction to ambient air thermal resistance of the BAS283-GS18?

    The junction to ambient air thermal resistance is 320 K/W on a PC board of 50 mm x 50 mm x 1.6 mm.

  5. What are the storage temperature limits for the BAS283-GS18?

    The storage temperature range is -65 °C to +150 °C.

  6. What type of packaging is available for the BAS283-GS18?

    The BAS283-GS18 is available in tape and reel packaging (GS18 and GS08 options).

  7. What are some common applications of the BAS283-GS18?

    Common applications include general purpose and switching circuits, HF-detectors, protection circuits, small battery chargers, power supplies, and DC/DC converters for notebooks.

  8. Does the BAS283-GS18 have built-in protection against static discharge?
  9. What is the typical leakage current of the BAS283-GS18?

    The typical reverse leakage current is very low, with specific values dependent on the reverse voltage and junction temperature.

  10. What is the maximum junction temperature for the BAS283-GS18?

    The maximum junction temperature is 125 °C.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
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Similar Products

Part Number BAS283-GS18 BAS285-GS18 BAS286-GS18 BAS281-GS18 BAS282-GS18 BAS283-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 30 V 50 V 40 V 50 V 60 V
Current - Average Rectified (Io) 30mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 800 mV @ 100 mA 900 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 2.3 µA @ 25 V 5 µA @ 40 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max)

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