BAS283-GS18
  • Share:

Vishay General Semiconductor - Diodes Division BAS283-GS18

Manufacturer No:
BAS283-GS18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 60V 30MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS283-GS18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general purpose and switching applications, offering several key advantages such as low forward voltage drop, low leakage current, and very low switching times. The BAS283-GS18 is part of the BAS281, BAS282, and BAS283 series, each differentiated by their reverse voltage ratings.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage - VR 60 V
Peak Forward Surge Current tp = 1 s IFSM 500 mA
Repetitive Peak Forward Current tp ≤ 1 s IFRM 150 mA
Forward Current - IF 30 mA
Forward Voltage IF = 0.1 mA VF 330 mV
Junction to Ambient Air Thermal Resistance On PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W
Junction Temperature - Tj 125 °C
Storage Temperature Range - Tstg -65 to +150 °C

Key Features

  • Integrated protection ring against static discharge
  • Low capacitance
  • Low leakage current
  • Low forward voltage drop
  • Very low switching time
  • QuadroMELF (SOD-80) case with a weight of approximately 34 mg
  • Available in tape and reel packaging (GS18 and GS08 options)

Applications

  • General purpose and switching Schottky barrier diode applications
  • HF-detector circuits
  • Protection circuits
  • Diode for low currents with low supply voltage
  • Small battery chargers
  • Power supplies
  • DC/DC converters for notebooks

Q & A

  1. What is the reverse voltage rating of the BAS283-GS18?

    The reverse voltage rating of the BAS283-GS18 is 60 V.

  2. What is the peak forward surge current of the BAS283-GS18?

    The peak forward surge current is 500 mA for a duration of 1 second.

  3. What is the typical forward voltage drop of the BAS283-GS18 at 0.1 mA?

    The typical forward voltage drop at 0.1 mA is 330 mV.

  4. What is the junction to ambient air thermal resistance of the BAS283-GS18?

    The junction to ambient air thermal resistance is 320 K/W on a PC board of 50 mm x 50 mm x 1.6 mm.

  5. What are the storage temperature limits for the BAS283-GS18?

    The storage temperature range is -65 °C to +150 °C.

  6. What type of packaging is available for the BAS283-GS18?

    The BAS283-GS18 is available in tape and reel packaging (GS18 and GS08 options).

  7. What are some common applications of the BAS283-GS18?

    Common applications include general purpose and switching circuits, HF-detectors, protection circuits, small battery chargers, power supplies, and DC/DC converters for notebooks.

  8. Does the BAS283-GS18 have built-in protection against static discharge?
  9. What is the typical leakage current of the BAS283-GS18?

    The typical reverse leakage current is very low, with specific values dependent on the reverse voltage and junction temperature.

  10. What is the maximum junction temperature for the BAS283-GS18?

    The maximum junction temperature is 125 °C.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 nA @ 200 V
Capacitance @ Vr, F:1.6pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-80 Variant
Supplier Device Package:SOD-80 QuadroMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.06
3,630

Please send RFQ , we will respond immediately.

Same Series
ATS-16A-45-C1-R0
ATS-16A-45-C1-R0
HEATSINK 25X25X20MM L-TAB

Similar Products

Part Number BAS283-GS18 BAS285-GS18 BAS286-GS18 BAS281-GS18 BAS282-GS18 BAS283-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 30 V 50 V 40 V 50 V 60 V
Current - Average Rectified (Io) 30mA 200mA 200mA 30mA 30mA 30mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 800 mV @ 100 mA 900 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 200 nA @ 200 V 2.3 µA @ 25 V 5 µA @ 40 V 200 nA @ 200 V 200 nA @ 200 V 200 nA @ 200 V
Capacitance @ Vr, F 1.6pF @ 1V, 1MHz 10pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant SOD-80 Variant
Supplier Device Package SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF SOD-80 QuadroMELF
Operating Temperature - Junction 125°C (Max) 125°C (Max) -65°C ~ 150°C 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

SM6T100A-E3/52
SM6T100A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM15T7V5A-E3/9AT
SM15T7V5A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM15T22CA-E3/9AT
SM15T22CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
1N4007GPE-E3/54
1N4007GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAT54-E3-08
BAT54-E3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAS20-G3-08
BAS20-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BZX85C15-TAP
BZX85C15-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 1.3W DO204AL
BZX84C51-HE3-18
BZX84C51-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX384B12-E3-18
BZX384B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 200MW SOD323
BZX384B3V0-G3-08
BZX384B3V0-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323