Overview
The BAS286-GS18 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is known for its low forward voltage drop and fast switching characteristics. It is part of Vishay's extensive range of discrete semiconductor products, which are widely used in various industries including consumer electronics, telecommunications, and automotive systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Continuous Reverse Voltage | VR | 50 | V |
| Forward Continuous Current | IF | 200 | mA |
| Repetitive Peak Forward Current (tp < 1 s, δ ≤ 0.5) | IFRM | 500 | mA |
| Power Dissipation | Ptot | 200 | mW |
| Thermal Resistance Junction to Ambient Air | RthJA | 300 | K/W |
| Junction Temperature | Tj | 125 | °C |
| Ambient Operating Temperature Range | Tamb | -65 to +125 | °C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Forward Voltage Drop (IF = 0.1 mA, tp < 300 μs) | VF | 200 - 300 | mV |
| Forward Voltage Drop (IF = 1 mA, tp < 300 μs) | VF | 275 - 380 | mV |
| Forward Voltage Drop (IF = 10 mA, tp < 300 μs) | VF | 365 - 450 | mV |
| Forward Voltage Drop (IF = 30 mA, tp < 300 μs) | VF | 460 - 600 | mV |
Key Features
- Low forward voltage drop, making it ideal for applications requiring minimal voltage loss.
- Fast switching characteristics, suitable for high-speed applications.
- Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
- Metal-on-silicon Schottky barrier device for enhanced performance.
- Available in a surface-mount SOD-80 (MiniMELF) package, which is compact and promotes better thermal performance.
Applications
The BAS286-GS18 is versatile and can be used in various applications where low forward voltage and fast switching are critical. These include:
- Protection of MOS devices.
- Steering, biasing, and coupling diodes for fast switching and low logic level applications.
- General-purpose applications where a very low forward voltage is required.
- Automotive systems, telecommunications equipment, and consumer electronics.
Q & A
- What is the continuous reverse voltage rating of the BAS286-GS18?
The continuous reverse voltage rating is 50 V. - What is the forward continuous current rating of the BAS286-GS18?
The forward continuous current rating is 200 mA. - What is the repetitive peak forward current rating of the BAS286-GS18?
The repetitive peak forward current rating is 500 mA for tp < 1 s and δ ≤ 0.5. - What is the power dissipation rating of the BAS286-GS18?
The power dissipation rating is 200 mW. - What is the thermal resistance junction to ambient air of the BAS286-GS18?
The thermal resistance junction to ambient air is 300 K/W. - What is the junction temperature rating of the BAS286-GS18?
The junction temperature rating is 125 °C. - What is the ambient operating temperature range of the BAS286-GS18?
The ambient operating temperature range is -65 to +125 °C. - What is the storage temperature range of the BAS286-GS18?
The storage temperature range is -65 to +150 °C. - Why is the BAS286-GS18 protected by a PN junction guard ring?
The BAS286-GS18 is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. - In what package is the BAS286-GS18 available?
The BAS286-GS18 is available in a surface-mount SOD-80 (MiniMELF) package.
