1N4002GPEHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPEHE3/54

Manufacturer No:
1N4002GPEHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPEHE3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various electrical and electronic applications. The 1N4002 is specifically rated for a maximum repetitive peak reverse voltage (VRRM) of 100 V and a maximum average forward rectified current (IF(AV)) of 1.0 A. It is housed in a DO-41 (DO-204AL) package, making it suitable for through-hole mounting.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current IR 5.0 μA μA
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A A
Peak Forward Surge Current (square wave, tp = 1 ms) IFSM 45 A A
Operating Junction Temperature Range TJ -50 to +150 °C °C
Package DO-41 (DO-204AL)

Key Features

  • General Purpose Rectification: Suitable for use in power supplies, inverters, converters, and freewheeling diode applications.
  • High Surge Current Capability: Can handle peak forward surge currents up to 45 A for short durations.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • RoHS Compliant: Meets RoHS standards for environmental compliance.
  • Through-Hole Mounting: Housed in a DO-41 (DO-204AL) package for easy mounting on PCBs.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Suitable for use in inverter and converter circuits due to its high surge current capability.
  • Freewheeling Diodes: Often used as freewheeling diodes to protect against back EMF in inductive loads.
  • General Electronic Circuits: Can be used in various general-purpose electronic circuits requiring rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N4002GPEHE3/54 diode?

    The maximum repetitive peak reverse voltage (VRRM) is 100 V.

  2. What is the maximum average forward rectified current (IF(AV)) of the 1N4002GPEHE3/54 diode?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the maximum instantaneous forward voltage (VF) of the 1N4002GPEHE3/54 diode?

    The maximum instantaneous forward voltage (VF) is 1.1 V at 1 A.

  4. What is the peak forward surge current capability of the 1N4002GPEHE3/54 diode?

    The diode can handle a peak forward surge current of up to 45 A for a square wave with a pulse duration of 1 ms.

  5. What is the operating junction temperature range of the 1N4002GPEHE3/54 diode?

    The operating junction temperature range is -50 to +150 °C.

  6. Is the 1N4002GPEHE3/54 diode RoHS compliant?
  7. What type of package does the 1N4002GPEHE3/54 diode come in?

    The diode is housed in a DO-41 (DO-204AL) package.

  8. What are some common applications of the 1N4002GPEHE3/54 diode?
  9. What is the maximum DC reverse current of the 1N4002GPEHE3/54 diode?

    The maximum DC reverse current is 5.0 μA at the rated DC blocking voltage.

  10. Can the 1N4002GPEHE3/54 diode be used in high-temperature environments?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
603

Please send RFQ , we will respond immediately.

Same Series
1N4001GPE-E3/54
1N4001GPE-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-E3/54
1N4002GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GPEHE3/73
1N4001GPEHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4003GPEHE3/54
1N4003GPEHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4001GPHE3/54
1N4001GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GPEHE3/91
1N4007GPEHE3/91
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4002GPEHE3/54 1N4002GPHE3/54 1N4003GPEHE3/54 1N4001GPEHE3/54 1N4002GPE-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 200 V 50 V 100 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 50 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SM15T22AHM3_A/H
SM15T22AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM6T33CAHE3/5B
SM6T33CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T12AHM3/H
SM15T12AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T18CAHM3/H
SM15T18CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX55C5V6-TAP
BZX55C5V6-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 500MW DO35
BZX384C10-HE3-08
BZX384C10-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323
BZX384C75-HE3-08
BZX384C75-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX384C2V7-G3-08
BZX384C2V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 200MW SOD323
BZX84B4V7-G3-08
BZX84B4V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX384B27-G3-08
BZX384B27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 200MW SOD323