1N4007-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007-E3/54

Manufacturer No:
1N4007-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007-E3/54 is a general purpose plastic rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 thru 1N4007 series, known for its low forward voltage drop, low leakage current, and high forward surge capability. It is packaged in a DO-41 (DO-204AL) case and is suitable for through-hole mounting. The device is widely used in various applications requiring general purpose rectification due to its robust specifications and reliability.

Key Specifications

Attribute Value
Manufacturer Vishay General Semiconductor - Diodes Division
Part Number 1N4007-E3/54
Diode Type Standard Recovery Rectifier
Configuration Single
Average Forward Current (If(AV)) 1 A
Repetitive Peak Reverse Voltage (Vrrm) 1000 V
Forward Voltage (Vf) 1.1 V
Reverse Current (Ir) 5 µA
Diode Capacitance 15 pF
Peak Forward Surge Current (Ifsm) 30 A
Operating Temperature Range -55°C to +150°C
Package Style DO-41 (DO-204AL)
Mounting Method Through Hole

Key Features

  • Low forward voltage drop of 1.1 V at 1 A
  • Low leakage current of 5 µA
  • High forward surge capability of up to 30 A
  • Maximum repetitive peak reverse voltage of 1000 V
  • Operating temperature range from -55°C to +150°C
  • RoHS compliant and UL94V-0 flammability-rated molded epoxy body
  • Matt tin-plated leads for reliable soldering

Applications

The 1N4007-E3/54 is versatile and can be used in a variety of applications, including:

  • General purpose rectification in power supplies and DC-DC converters
  • Free-wheeling diodes in inductive circuits
  • Rectifier circuits in audio and signal processing
  • Protection circuits against voltage spikes and surges
  • Automotive and industrial power systems

Q & A

  1. What is the maximum forward current rating of the 1N4007-E3/54 diode?

    The maximum forward current rating is 1 A.

  2. What is the maximum repetitive peak reverse voltage of the 1N4007-E3/54 diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  3. What is the forward voltage drop of the 1N4007-E3/54 diode at 1 A?

    The forward voltage drop is 1.1 V at 1 A.

  4. What is the operating temperature range of the 1N4007-E3/54 diode?

    The operating temperature range is from -55°C to +150°C.

  5. Is the 1N4007-E3/54 diode RoHS compliant?

    Yes, the 1N4007-E3/54 diode is RoHS compliant.

  6. What is the package style of the 1N4007-E3/54 diode?

    The package style is DO-41 (DO-204AL).

  7. What is the maximum peak forward surge current of the 1N4007-E3/54 diode?

    The maximum peak forward surge current is 30 A.

  8. What are some common applications of the 1N4007-E3/54 diode?

    Common applications include general purpose rectification, free-wheeling diodes, rectifier circuits, protection circuits, and automotive and industrial power systems.

  9. Is the 1N4007-E3/54 diode suitable for through-hole mounting?

    Yes, the 1N4007-E3/54 diode is suitable for through-hole mounting.

  10. What is the diode capacitance of the 1N4007-E3/54 diode?

    The diode capacitance is 15 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

$0.38
235

Please send RFQ , we will respond immediately.

Same Series
1N4007E-E3/73
1N4007E-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4006E-E3/54
1N4006E-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4002-E3/54
1N4002-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4005-E3/54
1N4005-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4007-E3/54
1N4007-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4004-E3/53
1N4004-E3/53
DIODE GEN PURP 400V 1A DO204AL
1N4003E-E3/54
1N4003E-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4006-E3/73
1N4006-E3/73
DIODE GEN PURP 800V 1A DO204AL
1N4003E-E3/53
1N4003E-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4005-E3/53
1N4005-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4005E-E3/53
1N4005E-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPHM3/73
1N4007GPHM3/73
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007-E3/54 1N4007E-E3/54 1N4006-E3/54 1N4007-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -55°C ~ 150°C -50°C ~ 150°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM15T39CAHE3/57T
SM15T39CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAT54A-HE3-18
BAT54A-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
LL4148-M-08
LL4148-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAS40-00-G3-18
BAS40-00-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX384C11-G3-18
BZX384C11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323