1N4007-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007-E3/54

Manufacturer No:
1N4007-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007-E3/54 is a general purpose plastic rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4001 thru 1N4007 series, known for its low forward voltage drop, low leakage current, and high forward surge capability. It is packaged in a DO-41 (DO-204AL) case and is suitable for through-hole mounting. The device is widely used in various applications requiring general purpose rectification due to its robust specifications and reliability.

Key Specifications

Attribute Value
Manufacturer Vishay General Semiconductor - Diodes Division
Part Number 1N4007-E3/54
Diode Type Standard Recovery Rectifier
Configuration Single
Average Forward Current (If(AV)) 1 A
Repetitive Peak Reverse Voltage (Vrrm) 1000 V
Forward Voltage (Vf) 1.1 V
Reverse Current (Ir) 5 µA
Diode Capacitance 15 pF
Peak Forward Surge Current (Ifsm) 30 A
Operating Temperature Range -55°C to +150°C
Package Style DO-41 (DO-204AL)
Mounting Method Through Hole

Key Features

  • Low forward voltage drop of 1.1 V at 1 A
  • Low leakage current of 5 µA
  • High forward surge capability of up to 30 A
  • Maximum repetitive peak reverse voltage of 1000 V
  • Operating temperature range from -55°C to +150°C
  • RoHS compliant and UL94V-0 flammability-rated molded epoxy body
  • Matt tin-plated leads for reliable soldering

Applications

The 1N4007-E3/54 is versatile and can be used in a variety of applications, including:

  • General purpose rectification in power supplies and DC-DC converters
  • Free-wheeling diodes in inductive circuits
  • Rectifier circuits in audio and signal processing
  • Protection circuits against voltage spikes and surges
  • Automotive and industrial power systems

Q & A

  1. What is the maximum forward current rating of the 1N4007-E3/54 diode?

    The maximum forward current rating is 1 A.

  2. What is the maximum repetitive peak reverse voltage of the 1N4007-E3/54 diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  3. What is the forward voltage drop of the 1N4007-E3/54 diode at 1 A?

    The forward voltage drop is 1.1 V at 1 A.

  4. What is the operating temperature range of the 1N4007-E3/54 diode?

    The operating temperature range is from -55°C to +150°C.

  5. Is the 1N4007-E3/54 diode RoHS compliant?

    Yes, the 1N4007-E3/54 diode is RoHS compliant.

  6. What is the package style of the 1N4007-E3/54 diode?

    The package style is DO-41 (DO-204AL).

  7. What is the maximum peak forward surge current of the 1N4007-E3/54 diode?

    The maximum peak forward surge current is 30 A.

  8. What are some common applications of the 1N4007-E3/54 diode?

    Common applications include general purpose rectification, free-wheeling diodes, rectifier circuits, protection circuits, and automotive and industrial power systems.

  9. Is the 1N4007-E3/54 diode suitable for through-hole mounting?

    Yes, the 1N4007-E3/54 diode is suitable for through-hole mounting.

  10. What is the diode capacitance of the 1N4007-E3/54 diode?

    The diode capacitance is 15 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

$0.38
235

Please send RFQ , we will respond immediately.

Same Series
1N4003E-E3/73
1N4003E-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4007-E3/53
1N4007-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4006E-E3/54
1N4006E-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4006-E3/54
1N4006-E3/54
DIODE GEN PURP 800V 1A DO204AL
1N4004E-E3/73
1N4004E-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4002GP-M3/73
1N4002GP-M3/73
DIODE GEN PURP 100V 1A DO204AL
1N4003E-E3/53
1N4003E-E3/53
DIODE GEN PURP 200V 1A DO204AL
1N4004E-E3/53
1N4004E-E3/53
DIODE GEN PURP 400V 1A DO204AL
1N4005-E3/53
1N4005-E3/53
DIODE GEN PURP 600V 1A DO204AL
1N4005GPHM3/73
1N4005GPHM3/73
DIODE GEN PURP 600V 1A DO204AL
1N4005GP-M3/73
1N4005GP-M3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GP-M3/73
1N4007GP-M3/73
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007-E3/54 1N4007E-E3/54 1N4006-E3/54 1N4007-E3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -55°C ~ 150°C -50°C ~ 150°C

Related Product By Categories

BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG3002ESF315
PMEG3002ESF315
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SMBJ5.0CAHM3/I
SMBJ5.0CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
MURB1620CTTRL
MURB1620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
MURD620CTTR
MURD620CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 3A DPAK
1N4148W-HE3-08
1N4148W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
LL4150-M-08
LL4150-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 600MA SOD80
1N5406GP-E3/54
1N5406GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160-E3/73
MUR160-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
1N4937GPEHE3/91
1N4937GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BZX84B6V8-HE3-08
BZX84B6V8-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 300MW SOT23-3
BZX84B18-HE3-08
BZX84B18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3