MURS260HE3_A/H
  • Share:

Vishay General Semiconductor - Diodes Division MURS260HE3_A/H

Manufacturer No:
MURS260HE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260HE3_A/H is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and is particularly suited for use in switching mode converters and inverters. It features a glass passivated pallet chip junction, making it ideal for automated placement and high-efficiency applications.

Key Specifications

Parameter Symbol MURS260 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 35 A
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (typical), 75 ns (maximum) ns
Package SMB (DO-214AA)

Key Features

  • Glass passivated pallet chip junction for high reliability and efficiency.
  • Ideal for automated placement due to its surface-mount design.
  • Ultrafast reverse recovery time, reducing switching losses and increasing efficiency.
  • High forward surge capability to handle transient conditions.
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C.
  • AEC-Q101 qualified for automotive applications (denoted by the HE3 suffix).
  • RoHS-compliant and meets UL 94 V-0 flammability rating.
  • Terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102.

Applications

The MURS260HE3_A/H is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various industries including consumer, computer, and telecommunication sectors.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260HE3_A/H?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current at TL = 125 °C?

    The maximum average forward rectified current is 2.0 A.

  3. What is the peak forward surge current rating?

    The peak forward surge current is 35 A for an 8.3 ms single half sine-wave superimposed on rated load.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. What is the typical reverse recovery time?

    The typical reverse recovery time is 50 ns, with a maximum of 75 ns under specific conditions.

  6. Is the MURS260HE3_A/H AEC-Q101 qualified?
  7. What package type does the MURS260HE3_A/H use?

    The component uses the SMB (DO-214AA) package.

  8. Is the MURS260HE3_A/H RoHS-compliant?
  9. What are the typical applications of the MURS260HE3_A/H?
  10. What is the flammability rating of the molding compound used in the MURS260HE3_A/H?

    The molding compound meets UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.15
405

Please send RFQ , we will respond immediately.

Same Series
MURS260-E3/52T
MURS260-E3/52T
DIODE GEN PURP 600V 2A DO214AA
MURS240HE3_A/H
MURS240HE3_A/H
DIODE GEN PURP 400V 2A DO214AA
MURS240HE3_A/I
MURS240HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
MURS260HE3_A/H
MURS260HE3_A/H
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS260HE3_A/H MURS260HE3_A/I MURS360HE3_A/H MURS160HE3_A/H MURS240HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 400 V
Current - Average Rectified (Io) 2A 2A 3A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.45 V @ 2 A 1.28 V @ 4 A 1.25 V @ 1 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 3 V 5 µA @ 600 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AB (SMC) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

SM15T36CA-E3/57T
SM15T36CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T18CA-M3/5B
SM6T18CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T68CA-M3/52
SM6T68CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T39CAHE3/57T
SM15T39CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T200CAHM3_A/I
SM15T200CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM6T22CAHM3/I
SM6T22CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
MUR420-M3/54
MUR420-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
BAS40LTH-G3-08
BAS40LTH-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3