MURS260HE3_A/H
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Vishay General Semiconductor - Diodes Division MURS260HE3_A/H

Manufacturer No:
MURS260HE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
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Product Introduction

Overview

The MURS260HE3_A/H is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and is particularly suited for use in switching mode converters and inverters. It features a glass passivated pallet chip junction, making it ideal for automated placement and high-efficiency applications.

Key Specifications

Parameter Symbol MURS260 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 35 A
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (typical), 75 ns (maximum) ns
Package SMB (DO-214AA)

Key Features

  • Glass passivated pallet chip junction for high reliability and efficiency.
  • Ideal for automated placement due to its surface-mount design.
  • Ultrafast reverse recovery time, reducing switching losses and increasing efficiency.
  • High forward surge capability to handle transient conditions.
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C.
  • AEC-Q101 qualified for automotive applications (denoted by the HE3 suffix).
  • RoHS-compliant and meets UL 94 V-0 flammability rating.
  • Terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102.

Applications

The MURS260HE3_A/H is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various industries including consumer, computer, and telecommunication sectors.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260HE3_A/H?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current at TL = 125 °C?

    The maximum average forward rectified current is 2.0 A.

  3. What is the peak forward surge current rating?

    The peak forward surge current is 35 A for an 8.3 ms single half sine-wave superimposed on rated load.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. What is the typical reverse recovery time?

    The typical reverse recovery time is 50 ns, with a maximum of 75 ns under specific conditions.

  6. Is the MURS260HE3_A/H AEC-Q101 qualified?
  7. What package type does the MURS260HE3_A/H use?

    The component uses the SMB (DO-214AA) package.

  8. Is the MURS260HE3_A/H RoHS-compliant?
  9. What are the typical applications of the MURS260HE3_A/H?
  10. What is the flammability rating of the molding compound used in the MURS260HE3_A/H?

    The molding compound meets UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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Same Series
MURS240HE3_A/H
MURS240HE3_A/H
DIODE GEN PURP 400V 2A DO214AA
MURS240HE3_A/I
MURS240HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
MURS260HE3_A/H
MURS260HE3_A/H
DIODE GEN PURP 600V 2A DO214AA
MURS260HE3_A/I
MURS260HE3_A/I
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS260HE3_A/H MURS260HE3_A/I MURS360HE3_A/H MURS160HE3_A/H MURS240HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 400 V
Current - Average Rectified (Io) 2A 2A 3A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.45 V @ 2 A 1.28 V @ 4 A 1.25 V @ 1 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 3 V 5 µA @ 600 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AB (SMC) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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