MURS260HE3_A/I
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Vishay General Semiconductor - Diodes Division MURS260HE3_A/I

Manufacturer No:
MURS260HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
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Product Introduction

Overview

The MURS260HE3_A/I is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for use in consumer, computer, and telecommunication systems. The MURS260HE3_A/I is AEC-Q101 qualified, making it suitable for automotive applications as well.

Key Specifications

Parameter Symbol MURS260 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load) IFSM 35 A
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A) ns
Package SMB (DO-214AA)

Key Features

  • Glass passivated pallet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
  • AEC-Q101 qualified for automotive applications
  • RoHS-compliant
  • Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The MURS260HE3_A/I is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various industries including:

  • Consumer electronics
  • Computer systems
  • Telecommunication equipment
  • Automotive systems (AEC-Q101 qualified)

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260HE3_A/I?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current at TL = 125 °C?

    The maximum average forward rectified current is 2.0 A.

  3. What is the peak forward surge current rating?

    The peak forward surge current is 35 A for an 8.3 ms single half sine-wave superimposed on rated load.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. What is the maximum instantaneous forward voltage at IF = 2.0 A and TJ = 25 °C?

    The maximum instantaneous forward voltage is 1.45 V.

  6. What is the maximum reverse recovery time?

    The maximum reverse recovery time is 50 ns under specific test conditions.

  7. Is the MURS260HE3_A/I AEC-Q101 qualified?
  8. What package type does the MURS260HE3_A/I use?

    The MURS260HE3_A/I uses the SMB (DO-214AA) package.

  9. Is the MURS260HE3_A/I RoHS-compliant?
  10. What are the typical applications of the MURS260HE3_A/I?

    The MURS260HE3_A/I is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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MURS260HE3_A/H
MURS260HE3_A/H
DIODE GEN PURP 600V 2A DO214AA
MURS260HE3_A/I
MURS260HE3_A/I
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS260HE3_A/I MURS360HE3_A/I MURS160HE3_A/I MURS240HE3_A/I MURS260HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 400 V 600 V
Current - Average Rectified (Io) 2A 3A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.28 V @ 4 A 1.25 V @ 1 A 1.45 V @ 2 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 10 µA @ 3 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AB (SMC) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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