MBRD835LG
  • Share:

onsemi MBRD835LG

Manufacturer No:
MBRD835LG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 35V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD835LG is a switch-mode power rectifier produced by onsemi. This component utilizes the Schottky Barrier principle with a proprietary barrier metal, making it suitable for various high-performance applications. It is designed for use as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes in switching power supplies, inverters, and other inductive switching circuits.

Key Specifications

Parameter Value Unit
Average Rectified Forward Current (TC = 88°C) 8.0 A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 80°C) 16 A
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) 75 A
Peak Repetitive Reverse Voltage 35 V
Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +25°C) 0.51 V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = +25°C) 1.4 mA
Operating Junction Temperature -65 to +150 °C
Storage / Operating Case Temperature -65 to +150 °C
Voltage Rate of Change (Rated VR) 10,000 V/μs
Package Style TO-252-3 (DPAK)
Mounting Method Surface Mount

Key Features

  • Low Forward Voltage: The MBRD835LG has a maximum instantaneous forward voltage of 0.51 V at 8 A and 25°C, ensuring low power losses.
  • High Operating Junction Temperature: The device can operate up to 150°C, making it suitable for high-temperature applications.
  • UL 94 V-0 Compliant Epoxy: The epoxy meets UL 94 V-0 standards at 0.125 inches, ensuring high safety standards.
  • Compact Size: The component is packaged in a compact TO-252-3 (DPAK) surface mount package.
  • Lead Formed for Surface Mount: The leads are formed for easy surface mounting.
  • AEC-Q101 Qualified and PPAP Capable: The SBRD8 prefix versions are qualified for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations.

Applications

The MBRD835LG is designed for use in various high-performance applications, including:

  • Output rectifiers in switching power supplies.
  • Free-wheeling diodes in inductive switching circuits.
  • Protection diodes in high-frequency applications.
  • Steering diodes in inverters and other power conversion systems.
  • Automotive and industrial power systems where high reliability and temperature tolerance are required.

Q & A

  1. What is the maximum average rectified forward current of the MBRD835LG?

    The maximum average rectified forward current is 8.0 A at a case temperature of 88°C.

  2. What is the peak repetitive forward current of the MBRD835LG?

    The peak repetitive forward current is 16 A with a duty cycle of 0.5 and a case temperature of 80°C.

  3. What is the maximum non-repetitive peak surge current of the MBRD835LG?

    The maximum non-repetitive peak surge current is 75 A.

  4. What is the maximum instantaneous forward voltage of the MBRD835LG?

    The maximum instantaneous forward voltage is 0.51 V at 8 A and 25°C.

  5. What is the operating junction temperature range of the MBRD835LG?

    The operating junction temperature range is -65 to +150°C.

  6. Is the MBRD835LG Pb-Free and RoHS compliant?

    Yes, the MBRD835LG is Pb-Free and RoHS compliant.

  7. What package style and mounting method does the MBRD835LG use?

    The MBRD835LG is packaged in a TO-252-3 (DPAK) surface mount package.

  8. Is the MBRD835LG qualified for automotive applications?

    Yes, the SBRD8 prefix versions are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

  9. What are the typical applications of the MBRD835LG?

    The MBRD835LG is typically used in switching power supplies, inverters, and other inductive switching circuits as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes.

  10. What safety standards does the epoxy of the MBRD835LG meet?

    The epoxy meets UL 94 V-0 standards at 0.125 inches.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):35 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:510 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1.4 mA @ 35 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.86
873

Please send RFQ , we will respond immediately.

Same Series
MBRD835LG
MBRD835LG
DIODE SCHOTTKY 35V 8A DPAK
SBR835LT4G-VF01
SBR835LT4G-VF01
DIODE SCHOTTKY 35V 8A DPAK
SBRD8835LG-VF01
SBRD8835LG-VF01
DIODE SCHOTTKY 35V 8A DPAK
SBRD8835LT4G
SBRD8835LT4G
DIODE SCHOTTKY 35V 8A DPAK

Similar Products

Part Number MBRD835LG MBRD835L
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V
Current - Average Rectified (Io) 8A 8A
Voltage - Forward (Vf) (Max) @ If 510 mV @ 8 A 510 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1.4 mA @ 35 V 1.4 mA @ 35 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN