MBRD835LG
  • Share:

onsemi MBRD835LG

Manufacturer No:
MBRD835LG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 35V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD835LG is a switch-mode power rectifier produced by onsemi. This component utilizes the Schottky Barrier principle with a proprietary barrier metal, making it suitable for various high-performance applications. It is designed for use as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes in switching power supplies, inverters, and other inductive switching circuits.

Key Specifications

Parameter Value Unit
Average Rectified Forward Current (TC = 88°C) 8.0 A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 80°C) 16 A
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) 75 A
Peak Repetitive Reverse Voltage 35 V
Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +25°C) 0.51 V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = +25°C) 1.4 mA
Operating Junction Temperature -65 to +150 °C
Storage / Operating Case Temperature -65 to +150 °C
Voltage Rate of Change (Rated VR) 10,000 V/μs
Package Style TO-252-3 (DPAK)
Mounting Method Surface Mount

Key Features

  • Low Forward Voltage: The MBRD835LG has a maximum instantaneous forward voltage of 0.51 V at 8 A and 25°C, ensuring low power losses.
  • High Operating Junction Temperature: The device can operate up to 150°C, making it suitable for high-temperature applications.
  • UL 94 V-0 Compliant Epoxy: The epoxy meets UL 94 V-0 standards at 0.125 inches, ensuring high safety standards.
  • Compact Size: The component is packaged in a compact TO-252-3 (DPAK) surface mount package.
  • Lead Formed for Surface Mount: The leads are formed for easy surface mounting.
  • AEC-Q101 Qualified and PPAP Capable: The SBRD8 prefix versions are qualified for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations.

Applications

The MBRD835LG is designed for use in various high-performance applications, including:

  • Output rectifiers in switching power supplies.
  • Free-wheeling diodes in inductive switching circuits.
  • Protection diodes in high-frequency applications.
  • Steering diodes in inverters and other power conversion systems.
  • Automotive and industrial power systems where high reliability and temperature tolerance are required.

Q & A

  1. What is the maximum average rectified forward current of the MBRD835LG?

    The maximum average rectified forward current is 8.0 A at a case temperature of 88°C.

  2. What is the peak repetitive forward current of the MBRD835LG?

    The peak repetitive forward current is 16 A with a duty cycle of 0.5 and a case temperature of 80°C.

  3. What is the maximum non-repetitive peak surge current of the MBRD835LG?

    The maximum non-repetitive peak surge current is 75 A.

  4. What is the maximum instantaneous forward voltage of the MBRD835LG?

    The maximum instantaneous forward voltage is 0.51 V at 8 A and 25°C.

  5. What is the operating junction temperature range of the MBRD835LG?

    The operating junction temperature range is -65 to +150°C.

  6. Is the MBRD835LG Pb-Free and RoHS compliant?

    Yes, the MBRD835LG is Pb-Free and RoHS compliant.

  7. What package style and mounting method does the MBRD835LG use?

    The MBRD835LG is packaged in a TO-252-3 (DPAK) surface mount package.

  8. Is the MBRD835LG qualified for automotive applications?

    Yes, the SBRD8 prefix versions are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

  9. What are the typical applications of the MBRD835LG?

    The MBRD835LG is typically used in switching power supplies, inverters, and other inductive switching circuits as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes.

  10. What safety standards does the epoxy of the MBRD835LG meet?

    The epoxy meets UL 94 V-0 standards at 0.125 inches.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):35 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:510 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1.4 mA @ 35 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.86
873

Please send RFQ , we will respond immediately.

Same Series
MBRD835LT4G
MBRD835LT4G
DIODE SCHOTTKY 35V 8A DPAK
SBR835LT4G-VF01
SBR835LT4G-VF01
DIODE SCHOTTKY 35V 8A DPAK
SBRD8835LG-VF01
SBRD8835LG-VF01
DIODE SCHOTTKY 35V 8A DPAK
SBRD8835LT4G
SBRD8835LT4G
DIODE SCHOTTKY 35V 8A DPAK

Similar Products

Part Number MBRD835LG MBRD835L
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V
Current - Average Rectified (Io) 8A 8A
Voltage - Forward (Vf) (Max) @ If 510 mV @ 8 A 510 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1.4 mA @ 35 V 1.4 mA @ 35 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK