MBRD835L
  • Share:

onsemi MBRD835L

Manufacturer No:
MBRD835L
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE SCHOTTKY 35V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD835L is a switch-mode power rectifier produced by onsemi, utilizing the Schottky Barrier principle with a proprietary barrier metal. This component is designed for use as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes in switching power supplies, inverters, and other inductive switching circuits. It is known for its low forward voltage, high operating junction temperature, and compact size, making it suitable for a variety of high-performance applications.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 35 V
Working Peak Reverse Voltage VRWM 35 V
DC Blocking Voltage VR 35 V
Average Rectified Forward Current (TC = 88°C) IF(AV) 8.0 A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 80°C) IFRM 16 A
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 75 A
Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +25°C) VF 0.51 V
Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +125°C) VF 0.41 V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = +25°C) IR 1.4 mA
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = +100°C) IR 35 mA
Operating Junction Temperature TJ -65 to +150 °C
Storage / Operating Case Temperature Tstg -65 to +150 °C
Thermal Resistance - Junction-to-Case RJC 2.8 °C/W
Thermal Resistance - Junction-to-Ambient RJA 80 °C/W

Key Features

  • Low Forward Voltage: The MBRD835L features a low forward voltage, making it suitable for applications where power efficiency is crucial.
  • High Operating Junction Temperature: The component can operate at high temperatures up to 150°C, making it ideal for harsh environment applications.
  • Epoxy Meets UL 94 V-0 @ 0.125 in: The epoxy package meets UL 94 standards for flaming combustibility and volatile organic (VO) emissions.
  • Compact Size: The component offers a compact size, making it suitable for applications where space is limited.
  • Lead Formed for Surface Mount: Designed for surface mount technology (SMT), making it easy to integrate into modern circuits.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS Compliant: Ensures compliance with environmental regulations.

Applications

The MBRD835L is designed for use in various high-performance applications, including:

  • Output rectifiers in switching power supplies.
  • Free-wheeling diodes in inductive switching circuits.
  • Protection and steering diodes in inverters and other switching circuits.
  • Automotive applications requiring AEC-Q101 qualification.
  • Harsh environment applications due to its high operating junction temperature.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD835L?

    The peak repetitive reverse voltage (VRRM) of the MBRD835L is 35 V.

  2. What is the average rectified forward current of the MBRD835L at 88°C?

    The average rectified forward current (IF(AV)) at 88°C is 8.0 A.

  3. What is the maximum instantaneous forward voltage of the MBRD835L at 25°C and 125°C?

    The maximum instantaneous forward voltage (VF) is 0.51 V at 25°C and 0.41 V at 125°C.

  4. What is the operating junction temperature range of the MBRD835L?

    The operating junction temperature (TJ) range is -65°C to +150°C.

  5. Is the MBRD835L Pb-Free and RoHS compliant?

    Yes, the MBRD835L is Pb-Free and RoHS compliant.

  6. What are the typical applications of the MBRD835L?

    The MBRD835L is typically used in switching power supplies, inverters, and other inductive switching circuits as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes.

  7. What is the thermal resistance - junction-to-case (RJC) of the MBRD835L?

    The thermal resistance - junction-to-case (RJC) is 2.8 °C/W.

  8. Is the MBRD835L suitable for automotive applications?

    Yes, the MBRD835L is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What is the storage and operating case temperature range of the MBRD835L?

    The storage and operating case temperature (Tstg) range is -65°C to +150°C.

  10. What is the non-repetitive peak surge current of the MBRD835L?

    The non-repetitive peak surge current (IFSM) is 75 A.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):35 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:510 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1.4 mA @ 35 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
113

Please send RFQ , we will respond immediately.

Same Series
ATS-21G-57-C2-R0
ATS-21G-57-C2-R0
HEATSINK 35X35X20MM L-TAB T766

Similar Products

Part Number MBRD835L MBRD835LG MBRD835
Manufacturer onsemi onsemi SMC Diode Solutions
Product Status Obsolete Last Time Buy Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V 35 V
Current - Average Rectified (Io) 8A 8A -
Voltage - Forward (Vf) (Max) @ If 510 mV @ 8 A 510 mV @ 8 A 510 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 1.4 mA @ 35 V 1.4 mA @ 35 V 1.4 mA @ 35 V
Capacitance @ Vr, F - - 600pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3