MBRD835L
  • Share:

onsemi MBRD835L

Manufacturer No:
MBRD835L
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE SCHOTTKY 35V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD835L is a switch-mode power rectifier produced by onsemi, utilizing the Schottky Barrier principle with a proprietary barrier metal. This component is designed for use as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes in switching power supplies, inverters, and other inductive switching circuits. It is known for its low forward voltage, high operating junction temperature, and compact size, making it suitable for a variety of high-performance applications.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 35 V
Working Peak Reverse Voltage VRWM 35 V
DC Blocking Voltage VR 35 V
Average Rectified Forward Current (TC = 88°C) IF(AV) 8.0 A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 80°C) IFRM 16 A
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 75 A
Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +25°C) VF 0.51 V
Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +125°C) VF 0.41 V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = +25°C) IR 1.4 mA
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = +100°C) IR 35 mA
Operating Junction Temperature TJ -65 to +150 °C
Storage / Operating Case Temperature Tstg -65 to +150 °C
Thermal Resistance - Junction-to-Case RJC 2.8 °C/W
Thermal Resistance - Junction-to-Ambient RJA 80 °C/W

Key Features

  • Low Forward Voltage: The MBRD835L features a low forward voltage, making it suitable for applications where power efficiency is crucial.
  • High Operating Junction Temperature: The component can operate at high temperatures up to 150°C, making it ideal for harsh environment applications.
  • Epoxy Meets UL 94 V-0 @ 0.125 in: The epoxy package meets UL 94 standards for flaming combustibility and volatile organic (VO) emissions.
  • Compact Size: The component offers a compact size, making it suitable for applications where space is limited.
  • Lead Formed for Surface Mount: Designed for surface mount technology (SMT), making it easy to integrate into modern circuits.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS Compliant: Ensures compliance with environmental regulations.

Applications

The MBRD835L is designed for use in various high-performance applications, including:

  • Output rectifiers in switching power supplies.
  • Free-wheeling diodes in inductive switching circuits.
  • Protection and steering diodes in inverters and other switching circuits.
  • Automotive applications requiring AEC-Q101 qualification.
  • Harsh environment applications due to its high operating junction temperature.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD835L?

    The peak repetitive reverse voltage (VRRM) of the MBRD835L is 35 V.

  2. What is the average rectified forward current of the MBRD835L at 88°C?

    The average rectified forward current (IF(AV)) at 88°C is 8.0 A.

  3. What is the maximum instantaneous forward voltage of the MBRD835L at 25°C and 125°C?

    The maximum instantaneous forward voltage (VF) is 0.51 V at 25°C and 0.41 V at 125°C.

  4. What is the operating junction temperature range of the MBRD835L?

    The operating junction temperature (TJ) range is -65°C to +150°C.

  5. Is the MBRD835L Pb-Free and RoHS compliant?

    Yes, the MBRD835L is Pb-Free and RoHS compliant.

  6. What are the typical applications of the MBRD835L?

    The MBRD835L is typically used in switching power supplies, inverters, and other inductive switching circuits as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes.

  7. What is the thermal resistance - junction-to-case (RJC) of the MBRD835L?

    The thermal resistance - junction-to-case (RJC) is 2.8 °C/W.

  8. Is the MBRD835L suitable for automotive applications?

    Yes, the MBRD835L is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What is the storage and operating case temperature range of the MBRD835L?

    The storage and operating case temperature (Tstg) range is -65°C to +150°C.

  10. What is the non-repetitive peak surge current of the MBRD835L?

    The non-repetitive peak surge current (IFSM) is 75 A.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):35 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:510 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1.4 mA @ 35 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
113

Please send RFQ , we will respond immediately.

Same Series
ATS-21G-57-C2-R0
ATS-21G-57-C2-R0
HEATSINK 35X35X20MM L-TAB T766

Similar Products

Part Number MBRD835L MBRD835LG MBRD835
Manufacturer onsemi onsemi SMC Diode Solutions
Product Status Obsolete Last Time Buy Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V 35 V
Current - Average Rectified (Io) 8A 8A -
Voltage - Forward (Vf) (Max) @ If 510 mV @ 8 A 510 mV @ 8 A 510 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 1.4 mA @ 35 V 1.4 mA @ 35 V 1.4 mA @ 35 V
Capacitance @ Vr, F - - 600pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4