MBRB10100CT-M3/4W
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Vishay General Semiconductor - Diodes Division MBRB10100CT-M3/4W

Manufacturer No:
MBRB10100CT-M3/4W
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE SCHOTTKY 90V 10A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRB10100CT-M3/4W is a high-voltage, high-current rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of Vishay's extensive portfolio of rectifiers, known for their reliability and performance in various electrical systems. The MBRB10100CT-M3/4W is designed to handle high forward currents and peak reverse voltages, making it suitable for a range of industrial and automotive applications.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM100V
Maximum DC Blocking VoltageVDC100V
Maximum Average Forward Rectified Current at TC = 133 °CIF(AV)10A
Peak Forward Surge Current (8.3 ms single half sine-wave)IFSM150A
Voltage Rate of Change (rated VR)dV/dt10,000V/μs
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +150°C
Typical Thermal Resistance, Junction to CaseRθJC2.0°C/W
Typical Thermal Resistance, Junction to AmbientRθJA60°C/W
Maximum Instantaneous Forward Voltage at IF = 10 A, TC = 25 °CVF0.80V
Maximum Reverse Current at Working Peak Reverse Voltage, TJ = 25 °CIR100μA

Key Features

  • High-voltage and high-current capabilities, making it suitable for demanding applications.
  • Low forward voltage drop, reducing power losses and improving efficiency.
  • High surge current capability to handle transient conditions.
  • Wide operating temperature range from -65 °C to +150 °C.
  • Compliant with JESD 201 class 1A whisker test for reliability.
  • Solderable leads per J-STD-002 and JESD 22-B102 standards.

Applications

The MBRB10100CT-M3/4W is versatile and can be used in various applications, including:

  • Industrial power supplies and rectifier circuits.
  • Automotive systems, such as battery charging and power management.
  • High-power DC-DC converters and inverters.
  • Motor control and drive systems.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBRB10100CT-M3/4W?
    The maximum repetitive peak reverse voltage is 100 V.
  2. What is the maximum average forward rectified current at TC = 133 °C?
    The maximum average forward rectified current is 10 A.
  3. What is the peak forward surge current capability of this diode?
    The peak forward surge current is 150 A for an 8.3 ms single half sine-wave.
  4. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is from -65 °C to +150 °C.
  5. What is the typical thermal resistance from junction to case?
    The typical thermal resistance from junction to case is 2.0 °C/W.
  6. Is the MBRB10100CT-M3/4W suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high reliability and performance.
  7. What is the maximum instantaneous forward voltage at IF = 10 A and TC = 25 °C?
    The maximum instantaneous forward voltage is 0.80 V.
  8. What are the soldering standards for the leads of this diode?
    The leads are solderable per J-STD-002 and JESD 22-B102 standards.
  9. What is the isolation voltage from terminal to heatsink?
    The isolation voltage from terminal to heatsink is 1500 V for 1 minute.
  10. What package types are available for the MBRB10100CT-M3/4W?
    The diode is available in the D2PAK (TO-263AB) package.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):90 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
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Similar Products

Part Number MBRB10100CT-M3/4W MBRB10100CT-M3/8W MBRB20100CT-M3/4W MBRB10100CT-E3/4W
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 90 V 90 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A 5A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 10 A 800 mV @ 10 A 800 mV @ 10 A 850 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) TO-263AB (D²PAK) TO-263AB (D²PAK) TO-263AB (D²PAK)

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