1N4148WS-HE3-18
  • Share:

Vishay General Semiconductor - Diodes Division 1N4148WS-HE3-18

Manufacturer No:
1N4148WS-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148WS-HE3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4148 series, known for its high performance and reliability in various electronic applications. It is designed to handle fast switching operations with minimal reverse recovery time, making it an excellent choice for rectification, polarity protection, and signal switching.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse VoltageTamb = 25 °CVR75V
Repetitive Peak Reverse VoltageTamb = 25 °CVRRM100V
Average Rectified CurrentHalf wave rectification with resistive load, f ≥ 50 HzIF(AV)150mA
Forward VoltageIF = 10 mAVF1V
Forward VoltageIF = 100 mAVF1.2V
Leakage CurrentVR = 75 VIR5 μA
Surge Forward Currentt < 1 s, Tj = 25 °CIFSM350mA
Power DissipationPtot200mW
Thermal Resistance Junction to Ambient AirRthJA650K/W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-65 to +150°C
Operating Temperature RangeTop-55 to +150°C
Reverse Recovery TimeIF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 Ωtrr4 ns
Diode Case StyleSOD-323

Key Features

  • Fast Switching Capability: The 1N4148WS-HE3-18 features a fast switching time with a reverse recovery time (trr) of ≤ 4 ns, making it suitable for high-speed applications.
  • Low Forward Voltage: It has a low forward voltage drop (VF) of 1 V at 10 mA and 1.2 V at 100 mA, which reduces power losses.
  • High Reliability: The diode is AEC-Q101 qualified, ensuring it meets stringent automotive standards for reliability and performance.
  • Compact Package: The SOD-323 package is compact and suitable for surface-mount technology (SMT), making it ideal for space-constrained designs.
  • High Temperature Range: The diode operates over a wide temperature range from -55 °C to +150 °C, making it versatile for various environmental conditions.
  • Low Leakage Current: It has a low leakage current (IR) of 5 μA at 75 V, which is beneficial for power-saving designs.

Applications

The 1N4148WS-HE3-18 is widely used in various applications due to its fast switching and reliable performance. Some common applications include:

  • Rectification and Polarity Protection: In power supplies, voltage regulators, and other DC-DC conversion circuits.
  • Signal Switching: In audio and video circuits, logic gates, and other signal processing applications.
  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for use in automotive electronics such as infotainment systems, safety systems, and more.
  • Industrial and Consumer Electronics: In control circuits, sensor interfaces, and other general-purpose electronic devices.

Q & A

  1. What is the maximum reverse voltage of the 1N4148WS-HE3-18 diode?
    The maximum reverse voltage (VR) is 75 V, and the repetitive peak reverse voltage (VRRM) is 100 V.
  2. What is the forward current rating of the 1N4148WS-HE3-18?
    The average rectified current (IF(AV)) is 150 mA.
  3. What is the forward voltage drop of the 1N4148WS-HE3-18?
    The forward voltage (VF) is 1 V at 10 mA and 1.2 V at 100 mA.
  4. What is the reverse recovery time of the 1N4148WS-HE3-18?
    The reverse recovery time (trr) is ≤ 4 ns.
  5. What is the operating temperature range of the 1N4148WS-HE3-18?
    The operating temperature range is from -55 °C to +150 °C.
  6. Is the 1N4148WS-HE3-18 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  7. What is the package type of the 1N4148WS-HE3-18?
    The diode is packaged in a SOD-323 case.
  8. What is the thermal resistance junction to ambient air of the 1N4148WS-HE3-18?
    The thermal resistance junction to ambient air (RthJA) is 650 K/W.
  9. What is the storage temperature range of the 1N4148WS-HE3-18?
    The storage temperature range is from -65 °C to +150 °C.
  10. What are some common applications of the 1N4148WS-HE3-18?
    Common applications include rectification, polarity protection, signal switching, automotive systems, and industrial/consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.26
1,308

Please send RFQ , we will respond immediately.

Same Series
1N4148WS-E3-08
1N4148WS-E3-08
DIODE GEN PURP 75V 150MA SOD323

Similar Products

Part Number 1N4148WS-HE3-18 1N4148WS-HG3-18 1N4148W-HE3-18 1N4148WS-E3-18 1N4148WS-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 150mA 150mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SOD-123 SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-123 SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM6T220CAHE3_A/I
SM6T220CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T220CAHM3_A/I
SM6T220CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T7V5CAHE3_A/I
SM6T7V5CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM6T150AHM3/I
SM6T150AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
BYQ28E-200HE3/45
BYQ28E-200HE3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO220AB
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
MURS120-E3/5BT
MURS120-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BAS21-E3-18
BAS21-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323