1N4148WS-E3-08
  • Share:

Vishay General Semiconductor - Diodes Division 1N4148WS-E3-08

Manufacturer No:
1N4148WS-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148WS-E3-08 is a small signal fast switching diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is encapsulated in a compact SOD-323 package and is designed for high-speed switching applications. It is built on silicon epitaxial planar technology, ensuring reliable performance and consistency in its operation. The 1N4148WS-E3-08 is widely used in various electronic circuits for its rectifying properties, particularly in signal processing, voltage clamping, and protection circuits.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage Tamb = 25 °C VR 75 V
Repetitive Peak Reverse Voltage Tamb = 25 °C VRRM 100 V
Average Rectified Current (half wave rectification with resistive load) f ≥ 50 Hz IF(AV) 150 mA
Surge Forward Current (t < 1 s and Tj = 25 °C) IFSM 350 mA
Power Dissipation Ptot 200 mW
Forward Voltage (IF = 10 mA) VF 1 V
Forward Voltage (IF = 100 mA) VF 1.2 V
Leakage Current (VR = 75 V) IR 5 μA
Reverse Recovery Time (IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 Ω) trr 4 ns
Diode Capacitance (VF = VR = 0 V) CD 4 pF
Operating Temperature Range Top -55 to +150 °C
Storage Temperature Range Tstg -65 to +150 °C
Thermal Resistance Junction to Ambient Air RthJA 650 K/W
Junction Temperature Tj 150 °C
Package Type SOD-323

Key Features

  • Fast Switching Capability: The diode features a reverse recovery time of just 4 ns, making it ideal for high-speed switching applications.
  • Low Forward Voltage Drop: The forward voltage drop is 1 V at 10 mA and 1.2 V at 100 mA, contributing to reduced power loss.
  • High Reverse Voltage Handling: Capable of handling a reverse voltage of up to 75 V and a repetitive peak reverse voltage of 100 V.
  • Compact Packaging: Encapsulated in a SOD-323 package, offering a balance between compactness and performance.
  • Wide Operating Temperature Range: Operates reliably across a temperature range of -55 to +150 °C.
  • Low Diode Capacitance: Diode capacitance of 4 pF, which is beneficial for high-frequency operations.

Applications

  • Signal Processing: Used in various signal processing applications due to its fast switching and low forward voltage drop characteristics.
  • Voltage Clamping: Ideal for voltage clamping and protection circuits in electronic devices.
  • High-Frequency Operations: Suitable for high-frequency and high-speed operations due to its low reverse recovery time and diode capacitance.
  • Consumer Electronics: Used in consumer electronics, telecommunications equipment, and automotive products.
  • Industrial Applications: Applicable in industrial settings for rectification, polarity protection, or signal switching.

Q & A

  1. What is the reverse voltage rating of the 1N4148WS-E3-08 diode?

    The reverse voltage rating of the 1N4148WS-E3-08 diode is 75 V, with a repetitive peak reverse voltage of 100 V.

  2. What is the forward current rating of the 1N4148WS-E3-08 diode?

    The average rectified current (half wave rectification with resistive load) is 150 mA.

  3. What is the forward voltage drop of the 1N4148WS-E3-08 diode?

    The forward voltage drop is 1 V at 10 mA and 1.2 V at 100 mA.

  4. What is the reverse recovery time of the 1N4148WS-E3-08 diode?

    The reverse recovery time is 4 ns.

  5. What is the operating temperature range of the 1N4148WS-E3-08 diode?

    The operating temperature range is -55 to +150 °C.

  6. What is the package type of the 1N4148WS-E3-08 diode?

    The diode is encapsulated in a SOD-323 package.

  7. What are the typical applications of the 1N4148WS-E3-08 diode?

    Typical applications include signal processing, voltage clamping, protection circuits, and high-frequency operations.

  8. What is the thermal resistance junction to ambient air of the 1N4148WS-E3-08 diode?

    The thermal resistance junction to ambient air is 650 K/W.

  9. What is the diode capacitance of the 1N4148WS-E3-08 diode?

    The diode capacitance is 4 pF.

  10. Is the 1N4148WS-E3-08 diode suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its robust specifications and wide operating temperature range.

  11. What is the surge forward current rating of the 1N4148WS-E3-08 diode?

    The surge forward current rating is 350 mA for t < 1 s and Tj = 25 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.24
2,903

Please send RFQ , we will respond immediately.

Same Series
1N4148WS-E3-08
1N4148WS-E3-08
DIODE GEN PURP 75V 150MA SOD323

Similar Products

Part Number 1N4148WS-E3-08 1N4148WS-HE3-08 1N4148WS-E3-18 1N4148WS-G3-08 1N4148W-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 150mA 150mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz - - - 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SOD-123
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-323 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C 150°C (Max)

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC

Related Product By Brand

SM6T200CA-M3/52
SM6T200CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
SM6T36CA-M3/52
SM6T36CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM15T22AHM3_A/H
SM15T22AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T12AHM3_A/I
SM15T12AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T18CAHM3/H
SM15T18CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BZX384C9V1-E3-08
BZX384C9V1-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 200MW SOD323
BZX384C10-E3-08
BZX384C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323
BZX84B3V9-E3-08
BZX84B3V9-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX384B15-HE3-08
BZX384B15-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX384C75-HE3-08
BZX384C75-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323