1N4148WS-E3-08
  • Share:

Vishay General Semiconductor - Diodes Division 1N4148WS-E3-08

Manufacturer No:
1N4148WS-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148WS-E3-08 is a small signal fast switching diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is encapsulated in a compact SOD-323 package and is designed for high-speed switching applications. It is built on silicon epitaxial planar technology, ensuring reliable performance and consistency in its operation. The 1N4148WS-E3-08 is widely used in various electronic circuits for its rectifying properties, particularly in signal processing, voltage clamping, and protection circuits.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage Tamb = 25 °C VR 75 V
Repetitive Peak Reverse Voltage Tamb = 25 °C VRRM 100 V
Average Rectified Current (half wave rectification with resistive load) f ≥ 50 Hz IF(AV) 150 mA
Surge Forward Current (t < 1 s and Tj = 25 °C) IFSM 350 mA
Power Dissipation Ptot 200 mW
Forward Voltage (IF = 10 mA) VF 1 V
Forward Voltage (IF = 100 mA) VF 1.2 V
Leakage Current (VR = 75 V) IR 5 μA
Reverse Recovery Time (IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 Ω) trr 4 ns
Diode Capacitance (VF = VR = 0 V) CD 4 pF
Operating Temperature Range Top -55 to +150 °C
Storage Temperature Range Tstg -65 to +150 °C
Thermal Resistance Junction to Ambient Air RthJA 650 K/W
Junction Temperature Tj 150 °C
Package Type SOD-323

Key Features

  • Fast Switching Capability: The diode features a reverse recovery time of just 4 ns, making it ideal for high-speed switching applications.
  • Low Forward Voltage Drop: The forward voltage drop is 1 V at 10 mA and 1.2 V at 100 mA, contributing to reduced power loss.
  • High Reverse Voltage Handling: Capable of handling a reverse voltage of up to 75 V and a repetitive peak reverse voltage of 100 V.
  • Compact Packaging: Encapsulated in a SOD-323 package, offering a balance between compactness and performance.
  • Wide Operating Temperature Range: Operates reliably across a temperature range of -55 to +150 °C.
  • Low Diode Capacitance: Diode capacitance of 4 pF, which is beneficial for high-frequency operations.

Applications

  • Signal Processing: Used in various signal processing applications due to its fast switching and low forward voltage drop characteristics.
  • Voltage Clamping: Ideal for voltage clamping and protection circuits in electronic devices.
  • High-Frequency Operations: Suitable for high-frequency and high-speed operations due to its low reverse recovery time and diode capacitance.
  • Consumer Electronics: Used in consumer electronics, telecommunications equipment, and automotive products.
  • Industrial Applications: Applicable in industrial settings for rectification, polarity protection, or signal switching.

Q & A

  1. What is the reverse voltage rating of the 1N4148WS-E3-08 diode?

    The reverse voltage rating of the 1N4148WS-E3-08 diode is 75 V, with a repetitive peak reverse voltage of 100 V.

  2. What is the forward current rating of the 1N4148WS-E3-08 diode?

    The average rectified current (half wave rectification with resistive load) is 150 mA.

  3. What is the forward voltage drop of the 1N4148WS-E3-08 diode?

    The forward voltage drop is 1 V at 10 mA and 1.2 V at 100 mA.

  4. What is the reverse recovery time of the 1N4148WS-E3-08 diode?

    The reverse recovery time is 4 ns.

  5. What is the operating temperature range of the 1N4148WS-E3-08 diode?

    The operating temperature range is -55 to +150 °C.

  6. What is the package type of the 1N4148WS-E3-08 diode?

    The diode is encapsulated in a SOD-323 package.

  7. What are the typical applications of the 1N4148WS-E3-08 diode?

    Typical applications include signal processing, voltage clamping, protection circuits, and high-frequency operations.

  8. What is the thermal resistance junction to ambient air of the 1N4148WS-E3-08 diode?

    The thermal resistance junction to ambient air is 650 K/W.

  9. What is the diode capacitance of the 1N4148WS-E3-08 diode?

    The diode capacitance is 4 pF.

  10. Is the 1N4148WS-E3-08 diode suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its robust specifications and wide operating temperature range.

  11. What is the surge forward current rating of the 1N4148WS-E3-08 diode?

    The surge forward current rating is 350 mA for t < 1 s and Tj = 25 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.24
2,903

Please send RFQ , we will respond immediately.

Same Series
1N4148WS-E3-08
1N4148WS-E3-08
DIODE GEN PURP 75V 150MA SOD323

Similar Products

Part Number 1N4148WS-E3-08 1N4148WS-HE3-08 1N4148WS-E3-18 1N4148WS-G3-08 1N4148W-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 150mA 150mA 150mA 150mA
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA 1.2 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz - - - 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SOD-123
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-323 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C 150°C (Max)

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T33AHE3/57T
SM15T33AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T6V8AHE3/52
SM6T6V8AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
MBR20H100CTG-E3/45
MBR20H100CTG-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
BYQ28E-200HE3/45
BYQ28E-200HE3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO220AB
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX384C6V2-HE3-08
BZX384C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 200MW SOD323
BZX84C3V3-HE3-18
BZX84C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84B10-E3-18
BZX84B10-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323