1N4937GPEHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GPEHE3/54

Manufacturer No:
1N4937GPEHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GPEHE3/54 is a fast switching plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the 1N4933GP to 1N4937GP series, known for their high reliability and efficiency in various electrical applications. Although marked as 'Not for New Designs,' these diodes are still widely used in existing systems and for replacement purposes.

Key Specifications

Parameter Symbol 1N4937GP Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum RMS Voltage VRMS 420 V
Maximum DC Blocking Voltage VDC 600 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.2 V
Maximum DC Reverse Current IR 5.0 μA
Reverse Recovery Time trr 200 ns
Typical Junction Capacitance CJ 15 pF
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: Ensures high reliability conditions.
  • Cavity-Free Glass Passivated Junction: Enhances durability and performance.
  • Fast Switching: Optimized for high efficiency in switching applications.
  • Low Leakage Current: Minimizes power loss and improves overall system efficiency.
  • High Forward Surge Capability: Handles peak forward surge currents effectively.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS-Compliant: Meets environmental standards for lead-free compliance.

Applications

  • Fast Switching Rectification: Used in power supplies, inverters, and converters.
  • Freewheeling Diodes: Employed in consumer and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4937GP diode?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the maximum average forward rectified current for the 1N4937GP?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the peak forward surge current rating for the 1N4937GP?

    The peak forward surge current (IFSM) is 30 A.

  4. What is the typical reverse recovery time of the 1N4937GP diode?

    The typical reverse recovery time (trr) is 200 ns.

  5. What is the operating junction temperature range for the 1N4937GP?

    The operating junction temperature range (TJ) is -65 to +175 °C.

  6. Is the 1N4937GP RoHS-compliant?
  7. What type of package does the 1N4937GP come in?

    The 1N4937GP comes in a DO-41 (DO-204AL) package.

  8. What are some typical applications for the 1N4937GP diode?

    Typical applications include fast switching rectification in power supplies, inverters, converters, and as freewheeling diodes in consumer and telecommunication equipment.

  9. Why is the 1N4937GP marked as 'Not for New Designs'?

    The 1N4937GP is marked as 'Not for New Designs' because it is no longer recommended for new projects, although it can still be used for existing systems and replacement purposes.

  10. What is the maximum DC reverse current at rated DC blocking voltage for the 1N4937GP?

    The maximum DC reverse current (IR) at rated DC blocking voltage is 5.0 μA at 25 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
564

Please send RFQ , we will respond immediately.

Same Series
1N4934GP-E3/54
1N4934GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4933GPHE3/73
1N4933GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4934GPHE3/73
1N4934GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4935GP-E3/73
1N4935GP-E3/73
DIODE GEN PURP 200V 1A DO204AL
1N4935GPHE3/73
1N4935GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4937GPHE3/73
1N4937GPHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4934GPEHE3/54
1N4934GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4934GPHE3/54
1N4934GPHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GPEHE3/54
1N4937GPEHE3/54
DIODE GEN PURP 600V 1A DO204AL
1N4933GP-M3/73
1N4933GP-M3/73
DIODE GEN PURP 50V 1A DO204AL
1N4934GPEHE3/91
1N4934GPEHE3/91
DIODE GEN PURP 100V 1A DO204AL
1N4937GPE-E3/91
1N4937GPE-E3/91
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4937GPEHE3/54 1N4937GPHE3/54 1N4934GPEHE3/54 1N4937GPE-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 100 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 600 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T18CA-E3/52
SM6T18CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T7V5CA-E3/52
SM6T7V5CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T30AHM3_A/I
SM15T30AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM15T6V8CAHE3_A/H
SM15T6V8CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
BAT54A-HE3-08
BAT54A-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54C-BO-G3-18
BAT54C-BO-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHTKY DL 30V 200MA SOT23
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX84C4V7-E3-18
BZX84C4V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323