1N4937GPE-E3/91
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GPE-E3/91

Manufacturer No:
1N4937GPE-E3/91
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GPE-E3/91 is a glass passivated junction fast switching plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N4933GP to 1N4937GP series, known for their high reliability and efficiency in various electrical applications. Although this specific part is noted as not for new designs and is obsolete, it remains relevant for existing systems and maintenance purposes.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM600V
Maximum RMS VoltageVRMS420V
Maximum DC Blocking VoltageVDC600V
Maximum Average Forward Rectified CurrentIF(AV)1.0A
Peak Forward Surge CurrentIFSM30A
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +175°C
Maximum Instantaneous Forward VoltageVF1.2V
Maximum DC Reverse Current at Rated DC Blocking VoltageIR5.0 μA (at TA = 25 °C)μA
Maximum Reverse Recovery Timetrr200 nsns
Typical Junction CapacitanceCJ15 pF (at 4.0 V, 1 MHz)pF
PackageDO-41 (DO-204AL)

Key Features

  • Superectifier Structure: Enhances reliability and performance.
  • Cavity-Free Glass Passivated Junction: Ensures high reliability and durability.
  • Fast Switching: Optimized for high efficiency in switching applications.
  • Low Leakage Current: Minimizes power loss and improves overall system efficiency.
  • High Forward Surge Capability: Handles high surge currents effectively.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS-Compliant: Meets environmental standards for lead-free soldering.

Applications

The 1N4937GPE-E3/91 diode is suitable for various applications, including:

  • Fast Switching Rectification: Ideal for power supplies, inverters, and converters.
  • Freewheeling Diodes: Used in consumer and telecommunication equipment.
  • General Purpose Rectification: Applicable in a wide range of industrial and consumer electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4937GPE-E3/91 diode?
    The maximum repetitive peak reverse voltage is 600 V.
  2. What is the maximum average forward rectified current of this diode?
    The maximum average forward rectified current is 1.0 A.
  3. What is the operating junction and storage temperature range for this diode?
    The operating junction and storage temperature range is -65 to +175 °C.
  4. What is the typical reverse recovery time of the 1N4937GPE-E3/91 diode?
    The typical reverse recovery time is 200 ns.
  5. Is the 1N4937GPE-E3/91 diode RoHS-compliant?
    Yes, the diode is RoHS-compliant.
  6. What type of package does the 1N4937GPE-E3/91 diode come in?
    The diode comes in a DO-41 (DO-204AL) package.
  7. What are some typical applications for the 1N4937GPE-E3/91 diode?
    Typical applications include fast switching rectification in power supplies, inverters, converters, and as freewheeling diodes in consumer and telecommunication equipment.
  8. What is the maximum instantaneous forward voltage of the 1N4937GPE-E3/91 diode?
    The maximum instantaneous forward voltage is 1.2 V.
  9. Is the 1N4937GPE-E3/91 diode suitable for high surge current applications?
    Yes, it has a high forward surge capability.
  10. What is the typical junction capacitance of the 1N4937GPE-E3/91 diode?
    The typical junction capacitance is 15 pF at 4.0 V and 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
294

Please send RFQ , we will respond immediately.

Same Series
1N4934GP-E3/54
1N4934GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GP-E3/73
1N4937GP-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4937GP-E3/54
1N4937GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4933GP-E3/54
1N4933GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4935GP-E3/54
1N4935GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4937GPHE3/73
1N4937GPHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4933GPHE3/54
1N4933GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4934GPHE3/54
1N4934GPHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4935GPHE3/54
1N4935GPHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4936GPHE3/54
1N4936GPHE3/54
DIODE GEN PURP 400V 1A DO204AL
1N4937GPHE3/54
1N4937GPHE3/54
DIODE GEN PURP 600V 1A DO204AL
1N4936GP-M3/73
1N4936GP-M3/73
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number 1N4937GPE-E3/91 1N4937GPEHE3/91 1N4934GPE-E3/91
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 100 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 100 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 12pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

SM15T39A-E3/57T
SM15T39A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T12CA-M3/5B
SM6T12CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T18A-E3/5B
SM6T18A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T6V8CAHM3_A/I
SM15T6V8CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BAV23C-G3-08
BAV23C-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
BAT42W-G3-08
BAT42W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR460-M3/54
MUR460-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
1N4007GPHE3/73
1N4007GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C10-HE3-08
BZX84C10-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX384C9V1-E3-08
BZX384C9V1-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 200MW SOD323
BZX384B15-HE3-18
BZX384B15-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323