1N4937GP-M3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GP-M3/54

Manufacturer No:
1N4937GP-M3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GP-M3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the 1N4933GP to 1N4937GP series, known for their fast switching capabilities and high reliability. The diode is housed in a DO-41 (DO-204AL) package, which is a molded epoxy body with matte tin plated leads, ensuring good solderability and mechanical strength. The 1N4937GP-M3/54 is designed for use in various applications requiring efficient rectification and high voltage handling.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum RMS Voltage VRMS 420 V
Maximum DC Blocking Voltage VDC 600 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.2 V
Maximum DC Reverse Current IR 5.0 μA
Reverse Recovery Time trr 200 ns
Typical Junction Capacitance CJ 15 pF
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: Ensures high reliability and efficiency.
  • Cavity-Free Glass Passivated Junction: Enhances the diode's durability and performance.
  • Fast Switching: Ideal for applications requiring high efficiency and fast recovery times.
  • Low Leakage Current: Minimizes power loss and improves overall system efficiency.
  • High Forward Surge Capability: Handles peak forward surge currents up to 30 A.
  • RoHS-Compliant: Meets environmental standards for lead-free and hazardous substance compliance.
  • Solderable Leads: Matte tin plated leads ensure good solderability per J-STD-002 and JESD 22-B102 standards.

Applications

The 1N4937GP-M3/54 is suitable for various applications, including:

  • Fast Switching Rectification: Used in power supplies, inverters, and converters.
  • Freewheeling Diodes: Employed in consumer and telecommunications equipment.
  • General Rectification: Applicable in industrial, automotive, and computing systems where high voltage and current handling are required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4937GP-M3/54?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4937GP-M3/54?

    The peak forward surge current rating is 30 A.

  4. What is the typical reverse recovery time of this diode?

    The typical reverse recovery time is 200 ns.

  5. What is the operating junction temperature range of the 1N4937GP-M3/54?

    The operating junction temperature range is -65 to +175 °C.

  6. Is the 1N4937GP-M3/54 RoHS-compliant?

    Yes, the 1N4937GP-M3/54 is RoHS-compliant.

  7. What type of package does the 1N4937GP-M3/54 come in?

    The diode is housed in a DO-41 (DO-204AL) package.

  8. What are some typical applications for the 1N4937GP-M3/54?

    Typical applications include fast switching rectification in power supplies, inverters, converters, and as freewheeling diodes in consumer and telecommunications equipment.

  9. What is the maximum instantaneous forward voltage of the 1N4937GP-M3/54?

    The maximum instantaneous forward voltage is 1.2 V.

  10. What is the typical junction capacitance of this diode?

    The typical junction capacitance is 15 pF at 4.0 V and 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
293

Please send RFQ , we will respond immediately.

Same Series
1N4934GPE-E3/54
1N4934GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GPE-E3/54
1N4937GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4937GP-M3/73
1N4937GP-M3/73
DIODE GEN PURP 600V 1A DO204AL
1N4947GPHM3/73
1N4947GPHM3/73
DIODE GEN PURP 800V 1A DO204AL
1N4933GP-M3/54
1N4933GP-M3/54
DIODE GEN PURP 50V 1A DO204AL
1N4934GP-M3/54
1N4934GP-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4935GP-M3/54
1N4935GP-M3/54
DIODE GEN PURP 200V 1A DO204AL
1N4936GP-M3/54
1N4936GP-M3/54
DIODE GEN PURP 400V 1A DO204AL
1N4937GPHM3/54
1N4937GPHM3/54
DIODE GEN PURP 600V 1A DO204AL
1N4937GP-M3/54
1N4937GP-M3/54
DIODE GEN PURP 600V 1A DO204AL
1N4948GPHM3/54
1N4948GPHM3/54
DIODE GEN PURP 1KV 1A DO204AL
ATS-02D-174-C3-R0
ATS-02D-174-C3-R0
HEATSINK 30X30X35MM R-TAB T412

Similar Products

Part Number 1N4937GP-M3/54 1N4937GPHM3/54 1N4947GP-M3/54 1N4934GP-M3/54 1N4935GP-M3/54 1N4936GP-M3/54 1N4937GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 800 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.3 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 250 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 1 µA @ 800 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 12pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

SM6T15CA-M3/52
SM6T15CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T33CAHM3_A/H
SM6T33CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T22CAHM3_A/I
SM15T22CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
BAT54S-HE3-08
BAT54S-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
MBR20H100CTG-E3/45
MBR20H100CTG-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
MURB1620CTTRL
MURB1620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX384C3V3-HE3-08
BZX384C3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 200MW SOD323
BZX84C51-E3-18
BZX84C51-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX84C68-HE3-08
BZX84C68-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 68V 300MW SOT23-3
BZX84B22-G3-18
BZX84B22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3