1N4937GP-M3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GP-M3/54

Manufacturer No:
1N4937GP-M3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GP-M3/54 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the 1N4933GP to 1N4937GP series, known for their fast switching capabilities and high reliability. The diode is housed in a DO-41 (DO-204AL) package, which is a molded epoxy body with matte tin plated leads, ensuring good solderability and mechanical strength. The 1N4937GP-M3/54 is designed for use in various applications requiring efficient rectification and high voltage handling.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum RMS Voltage VRMS 420 V
Maximum DC Blocking Voltage VDC 600 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.2 V
Maximum DC Reverse Current IR 5.0 μA
Reverse Recovery Time trr 200 ns
Typical Junction Capacitance CJ 15 pF
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: Ensures high reliability and efficiency.
  • Cavity-Free Glass Passivated Junction: Enhances the diode's durability and performance.
  • Fast Switching: Ideal for applications requiring high efficiency and fast recovery times.
  • Low Leakage Current: Minimizes power loss and improves overall system efficiency.
  • High Forward Surge Capability: Handles peak forward surge currents up to 30 A.
  • RoHS-Compliant: Meets environmental standards for lead-free and hazardous substance compliance.
  • Solderable Leads: Matte tin plated leads ensure good solderability per J-STD-002 and JESD 22-B102 standards.

Applications

The 1N4937GP-M3/54 is suitable for various applications, including:

  • Fast Switching Rectification: Used in power supplies, inverters, and converters.
  • Freewheeling Diodes: Employed in consumer and telecommunications equipment.
  • General Rectification: Applicable in industrial, automotive, and computing systems where high voltage and current handling are required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4937GP-M3/54?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current of this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4937GP-M3/54?

    The peak forward surge current rating is 30 A.

  4. What is the typical reverse recovery time of this diode?

    The typical reverse recovery time is 200 ns.

  5. What is the operating junction temperature range of the 1N4937GP-M3/54?

    The operating junction temperature range is -65 to +175 °C.

  6. Is the 1N4937GP-M3/54 RoHS-compliant?

    Yes, the 1N4937GP-M3/54 is RoHS-compliant.

  7. What type of package does the 1N4937GP-M3/54 come in?

    The diode is housed in a DO-41 (DO-204AL) package.

  8. What are some typical applications for the 1N4937GP-M3/54?

    Typical applications include fast switching rectification in power supplies, inverters, converters, and as freewheeling diodes in consumer and telecommunications equipment.

  9. What is the maximum instantaneous forward voltage of the 1N4937GP-M3/54?

    The maximum instantaneous forward voltage is 1.2 V.

  10. What is the typical junction capacitance of this diode?

    The typical junction capacitance is 15 pF at 4.0 V and 1 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
293

Please send RFQ , we will respond immediately.

Same Series
1N4934GPE-E3/54
1N4934GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GPE-E3/54
1N4937GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4937GPEHE3/91
1N4937GPEHE3/91
DIODE GEN PURP 600V 1A DO204AL
1N4937GP-M3/73
1N4937GP-M3/73
DIODE GEN PURP 600V 1A DO204AL
1N4947GPHM3/73
1N4947GPHM3/73
DIODE GEN PURP 800V 1A DO204AL
1N4933GP-M3/54
1N4933GP-M3/54
DIODE GEN PURP 50V 1A DO204AL
1N4934GP-M3/54
1N4934GP-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4935GP-M3/54
1N4935GP-M3/54
DIODE GEN PURP 200V 1A DO204AL
1N4936GP-M3/54
1N4936GP-M3/54
DIODE GEN PURP 400V 1A DO204AL
1N4937GP-M3/54
1N4937GP-M3/54
DIODE GEN PURP 600V 1A DO204AL
1N4948GPHM3/54
1N4948GPHM3/54
DIODE GEN PURP 1KV 1A DO204AL
ATS-02D-174-C3-R0
ATS-02D-174-C3-R0
HEATSINK 30X30X35MM R-TAB T412

Similar Products

Part Number 1N4937GP-M3/54 1N4937GPHM3/54 1N4947GP-M3/54 1N4934GP-M3/54 1N4935GP-M3/54 1N4936GP-M3/54 1N4937GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 800 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.3 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 250 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 1 µA @ 800 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 12pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

SM15T6V8A-E3/57T
SM15T6V8A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM6T12A-M3/5B
SM6T12A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T10AHE3_A/H
SM6T10AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T150AHE3_A/I
SM6T150AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T18AHE3/52
SM6T18AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T18CAHM3/H
SM15T18CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BAS70-05-E3-18
BAS70-05-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
1N4007GPHE3/73
1N4007GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384B3V0-E3-08
BZX384B3V0-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323
BZX84C30-HE3-08
BZX84C30-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX384B3V0-HE3-18
BZX384B3V0-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323