1N4937GP-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GP-M3/73

Manufacturer No:
1N4937GP-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GP-M3/73 is a fast switching plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the 1N4933GP to 1N4937GP series, known for their high reliability and efficiency in various electrical applications. Although the specific part number 1N4937GP-M3/73 is noted as obsolete, it remains relevant for understanding the capabilities and uses of similar rectifier diodes in the series.

Key Specifications

Parameter Symbol 1N4937GP Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum RMS Voltage VRMS 420 V
Maximum DC Blocking Voltage VDC 600 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.2 V
Maximum DC Reverse Current IR 5.0 μA μA
Reverse Recovery Time trr 200 ns ns
Typical Junction Capacitance CJ 15 pF pF
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: Ensures high reliability conditions.
  • Cavity-Free Glass Passivated Junction: Enhances durability and performance.
  • Fast Switching: High efficiency due to fast switching capabilities.
  • Low Leakage Current: Minimizes energy loss.
  • High Forward Surge Capability: Handles high surge currents effectively.
  • Solder Dip 275 °C Max.: Compliant with JESD 22-B106 standards.
  • RoHS-Compliant: Meets environmental standards.
  • Matte Tin Plated Leads: Solderable per J-STD-002 and JESD 22-B102.

Applications

The 1N4937GP-M3/73 is suitable for various applications including:

  • Fast Switching Rectification: In power supplies, inverters, and converters.
  • Freewheeling Diodes: For consumer and telecommunication devices.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4937GP-M3/73?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current for this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the typical reverse recovery time of the 1N4937GP-M3/73?

    The typical reverse recovery time is 200 ns.

  4. What is the operating junction and storage temperature range for this diode?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. Is the 1N4937GP-M3/73 RoHS-compliant?
  6. What type of package does the 1N4937GP-M3/73 come in?

    The diode comes in a DO-41 (DO-204AL) package.

  7. What are the typical applications of the 1N4937GP-M3/73?

    Typical applications include fast switching rectification in power supplies, inverters, converters, and as freewheeling diodes for consumer and telecommunication devices.

  8. What is the maximum instantaneous forward voltage for the 1N4937GP-M3/73?

    The maximum instantaneous forward voltage is 1.2 V.

  9. What is the peak forward surge current rating for this diode?

    The peak forward surge current rating is 30 A.

  10. Is the 1N4937GP-M3/73 still in production?

    No, the 1N4937GP-M3/73 is noted as obsolete and no longer manufactured.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
213

Please send RFQ , we will respond immediately.

Same Series
1N4934GPE-E3/54
1N4934GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GPE-E3/54
1N4937GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4937GPEHE3/91
1N4937GPEHE3/91
DIODE GEN PURP 600V 1A DO204AL
1N4937GP-M3/73
1N4937GP-M3/73
DIODE GEN PURP 600V 1A DO204AL
1N4947GPHM3/73
1N4947GPHM3/73
DIODE GEN PURP 800V 1A DO204AL
1N4933GP-M3/54
1N4933GP-M3/54
DIODE GEN PURP 50V 1A DO204AL
1N4934GP-M3/54
1N4934GP-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4935GP-M3/54
1N4935GP-M3/54
DIODE GEN PURP 200V 1A DO204AL
1N4936GP-M3/54
1N4936GP-M3/54
DIODE GEN PURP 400V 1A DO204AL
1N4937GPHM3/54
1N4937GPHM3/54
DIODE GEN PURP 600V 1A DO204AL
1N4948GPHM3/54
1N4948GPHM3/54
DIODE GEN PURP 1KV 1A DO204AL
ATS-02D-174-C3-R0
ATS-02D-174-C3-R0
HEATSINK 30X30X35MM R-TAB T412

Similar Products

Part Number 1N4937GP-M3/73 1N4947GP-M3/73 1N4934GP-M3/73 1N4936GP-M3/73 1N4937GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V 100 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.3 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 250 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 1 µA @ 800 V 5 µA @ 100 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C - -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

SM6T220AHE3_A/H
SM6T220AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T30CA-E3/5B
SM6T30CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T150AHM3_A/H
SM6T150AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T24CAHM3_A/I
SM6T24CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
1.5KE6.8A-E3/73
1.5KE6.8A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX84C62-HE3-18
BZX84C62-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84B2V4-E3-18
BZX84B2V4-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 300MW SOT23-3
BZX384C2V7-G3-08
BZX384C2V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 200MW SOD323
BZX384B3V0-G3-08
BZX384B3V0-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323