1N4937GP-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GP-M3/73

Manufacturer No:
1N4937GP-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GP-M3/73 is a fast switching plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the 1N4933GP to 1N4937GP series, known for their high reliability and efficiency in various electrical applications. Although the specific part number 1N4937GP-M3/73 is noted as obsolete, it remains relevant for understanding the capabilities and uses of similar rectifier diodes in the series.

Key Specifications

Parameter Symbol 1N4937GP Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum RMS Voltage VRMS 420 V
Maximum DC Blocking Voltage VDC 600 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.2 V
Maximum DC Reverse Current IR 5.0 μA μA
Reverse Recovery Time trr 200 ns ns
Typical Junction Capacitance CJ 15 pF pF
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: Ensures high reliability conditions.
  • Cavity-Free Glass Passivated Junction: Enhances durability and performance.
  • Fast Switching: High efficiency due to fast switching capabilities.
  • Low Leakage Current: Minimizes energy loss.
  • High Forward Surge Capability: Handles high surge currents effectively.
  • Solder Dip 275 °C Max.: Compliant with JESD 22-B106 standards.
  • RoHS-Compliant: Meets environmental standards.
  • Matte Tin Plated Leads: Solderable per J-STD-002 and JESD 22-B102.

Applications

The 1N4937GP-M3/73 is suitable for various applications including:

  • Fast Switching Rectification: In power supplies, inverters, and converters.
  • Freewheeling Diodes: For consumer and telecommunication devices.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4937GP-M3/73?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current for this diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the typical reverse recovery time of the 1N4937GP-M3/73?

    The typical reverse recovery time is 200 ns.

  4. What is the operating junction and storage temperature range for this diode?

    The operating junction and storage temperature range is -65 to +175 °C.

  5. Is the 1N4937GP-M3/73 RoHS-compliant?
  6. What type of package does the 1N4937GP-M3/73 come in?

    The diode comes in a DO-41 (DO-204AL) package.

  7. What are the typical applications of the 1N4937GP-M3/73?

    Typical applications include fast switching rectification in power supplies, inverters, converters, and as freewheeling diodes for consumer and telecommunication devices.

  8. What is the maximum instantaneous forward voltage for the 1N4937GP-M3/73?

    The maximum instantaneous forward voltage is 1.2 V.

  9. What is the peak forward surge current rating for this diode?

    The peak forward surge current rating is 30 A.

  10. Is the 1N4937GP-M3/73 still in production?

    No, the 1N4937GP-M3/73 is noted as obsolete and no longer manufactured.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
213

Please send RFQ , we will respond immediately.

Same Series
1N4934GPE-E3/54
1N4934GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GPE-E3/54
1N4937GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4937GPEHE3/91
1N4937GPEHE3/91
DIODE GEN PURP 600V 1A DO204AL
1N4937GP-M3/73
1N4937GP-M3/73
DIODE GEN PURP 600V 1A DO204AL
1N4947GPHM3/73
1N4947GPHM3/73
DIODE GEN PURP 800V 1A DO204AL
1N4933GP-M3/54
1N4933GP-M3/54
DIODE GEN PURP 50V 1A DO204AL
1N4934GP-M3/54
1N4934GP-M3/54
DIODE GEN PURP 100V 1A DO204AL
1N4935GP-M3/54
1N4935GP-M3/54
DIODE GEN PURP 200V 1A DO204AL
1N4936GP-M3/54
1N4936GP-M3/54
DIODE GEN PURP 400V 1A DO204AL
1N4937GP-M3/54
1N4937GP-M3/54
DIODE GEN PURP 600V 1A DO204AL
1N4948GPHM3/54
1N4948GPHM3/54
DIODE GEN PURP 1KV 1A DO204AL
ATS-02D-174-C3-R0
ATS-02D-174-C3-R0
HEATSINK 30X30X35MM R-TAB T412

Similar Products

Part Number 1N4937GP-M3/73 1N4947GP-M3/73 1N4934GP-M3/73 1N4936GP-M3/73 1N4937GP-E3/73
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V 100 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.3 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 250 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 1 µA @ 800 V 5 µA @ 100 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C - -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SM6T10AHE3_A/H
SM6T10AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SM6T15AHE3_A/H
SM6T15AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T200CA-M3/52
SM6T200CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
SM6T30CAHM3_A/H
SM6T30CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T12AHM3_A/I
SM15T12AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BAT54-HE3-18
BAT54-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
BZX384C16-HE3-08
BZX384C16-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323
BZX84C4V3-E3-18
BZX84C4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84B22-HE3-08
BZX84B22-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX384B36-G3-18
BZX384B36-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 36V 200MW SOD323