Overview
The FDG6320C is a dual N- and P-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This device is designed using onsemi's proprietary high cell density DMOS technology, which minimizes on-state resistance, making it ideal for low voltage applications. It serves as a replacement for bipolar digital transistors and small signal MOSFETs, offering the advantage of not requiring bias resistors.
Key Specifications
| Parameter | N-Channel | P-Channel | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 25 | -25 | V |
| Gate-Source Voltage (VGSS) | 8 | -8 | V |
| Continuous Drain Current (ID) | 0.22 | -0.14 | A |
| Pulsed Drain Current (ID) | 0.65 | -0.4 | A |
| Maximum Power Dissipation (PD) | 0.3 | 0.3 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | -55 to 150 | °C |
| Electrostatic Discharge Rating (ESD) | 6 kV | 6 kV | Human Body Model |
| On-Resistance (RDS(ON)) at VGS = 4.5 V, ID = 0.22 A | 4.0 Ω | 10 Ω | Ω |
| On-Resistance (RDS(ON)) at VGS = 2.7 V, ID = 0.19 A | 5.0 Ω | 13 Ω | Ω |
| Thermal Resistance, Junction-to-Ambient (RJA) | 415 °C/W | 415 °C/W | °C/W |
Key Features
- Very small package outline: SC70-6/SOT-363
- Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model)
- Pb-Free and RoHS compliant
- No bias resistors required, replacing several different digital transistors with different bias resistor values
Applications
The FDG6320C is suitable for various low voltage applications, including but not limited to:
- Replacement for bipolar digital transistors and small signal MOSFETs
- Low voltage logic circuits
- Power management in portable electronics
- Automotive and industrial control systems
Q & A
- What is the FDG6320C?
The FDG6320C is a dual N- and P-Channel logic level enhancement mode field effect transistor produced by onsemi.
- What technology is used to produce the FDG6320C?
The FDG6320C is produced using onsemi's proprietary high cell density DMOS technology.
- What are the typical on-state resistances for the N- and P-Channels?
For the N-Channel, RDS(ON) is 4.0 Ω at VGS = 4.5 V, ID = 0.22 A. For the P-Channel, RDS(ON) is 10 Ω at VGS = -4.5 V, ID = -0.14 A.
- What is the maximum power dissipation for the FDG6320C?
The maximum power dissipation is 0.3 W.
- What is the operating temperature range for the FDG6320C?
The operating and storage temperature range is -55 to 150°C.
- Is the FDG6320C ESD rugged?
Yes, the FDG6320C has a Gate-Source Zener for ESD ruggedness, rated at >6 kV Human Body Model.
- Is the FDG6320C Pb-Free and RoHS compliant?
Yes, the FDG6320C is Pb-Free and RoHS compliant.
- What package types are available for the FDG6320C?
The FDG6320C is available in SC70-6/SOT-363 packages.
- What are some common applications for the FDG6320C?
The FDG6320C is suitable for low voltage logic circuits, power management in portable electronics, and automotive and industrial control systems.
- Does the FDG6320C require bias resistors?
No, the FDG6320C does not require bias resistors, making it a versatile replacement for several different digital transistors.
