BUK9K35-60E,115
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Nexperia USA Inc. BUK9K35-60E,115

Manufacturer No:
BUK9K35-60E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 22A LFPAK56D
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9K35-60E,115 is a high-performance MOSFET array produced by Nexperia USA Inc. This component is part of Nexperia's TrenchMOS™ series, known for its advanced technology in power MOSFETs. The BUK9K35-60E,115 is designed for automotive applications and is AEC-Q101 qualified, ensuring reliability and robustness in demanding environments. It features a dual N-channel configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Part NumberBUK9K35-60E,115
ManufacturerNexperia USA Inc.
DescriptionMOSFET Array 2 N-Channel (Dual) 60V 22A 38W Surface Mount LFPAK56D
Drain to Source Voltage (Vdss)60V
Continuous Drain Current (Id) @ 25°C22A
Max Power Dissipation38W
Package / CaseSOT-1205, 8-LFPAK56
Operating Temperature-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id2.1V @ 1mA
Rds On (Max) @ Id, Vgs32 mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds1081pF @ 25V
Gate Charge (Qg) (Max) @ Vgs14.2nC @ 10V
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Dual N-Channel Configuration: The BUK9K35-60E,115 features a dual N-channel MOSFET array, enhancing its versatility in various power management and switching applications.
  • High Current and Voltage Ratings: With a continuous drain current of 22A and a drain to source voltage of 60V, this MOSFET is suitable for high-power applications.
  • Low On-Resistance: The component has a maximum on-resistance of 32 mOhm at 5A and 10V, ensuring efficient power handling.
  • Logic Level Gate: The MOSFET is designed with a logic level gate, making it compatible with a wide range of control signals.
  • AEC-Q101 Qualified: This component meets the AEC-Q101 standard, ensuring its reliability and performance in automotive and other demanding environments.
  • RoHS Compliant: The BUK9K35-60E,115 is lead-free and RoHS compliant, adhering to environmental regulations.

Applications

The BUK9K35-60E,115 is designed for use in various high-power applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is well-suited for use in automotive power management, such as in electric vehicles, hybrid vehicles, and other automotive power systems.
  • Power Supplies: Its high current and voltage ratings make it ideal for use in power supply units, especially those requiring high efficiency and reliability.
  • Motor Control: The MOSFET can be used in motor control circuits due to its high current handling capability and low on-resistance.
  • Industrial Power Management: It is also suitable for industrial power management applications where high reliability and performance are critical.

Q & A

  1. What is the part number of this MOSFET?
    The part number is BUK9K35-60E,115.
  2. Who is the manufacturer of this component?
    The manufacturer is Nexperia USA Inc.
  3. What is the maximum drain to source voltage (Vdss) of this MOSFET?
    The maximum drain to source voltage is 60V.
  4. What is the continuous drain current (Id) at 25°C?
    The continuous drain current at 25°C is 22A.
  5. What is the maximum power dissipation of this component?
    The maximum power dissipation is 38W.
  6. What is the package type of this MOSFET?
    The package type is SOT-1205, 8-LFPAK56.
  7. Is this component RoHS compliant?
    Yes, the BUK9K35-60E,115 is lead-free and RoHS compliant.
  8. What is the operating temperature range of this component?
    The operating temperature range is -55°C to 175°C (TJ).
  9. What is the typical on-resistance of this MOSFET?
    The maximum on-resistance is 32 mOhm at 5A and 10V.
  10. Is this component AEC-Q101 qualified?
    Yes, the BUK9K35-60E,115 is AEC-Q101 qualified.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:22A
Rds On (Max) @ Id, Vgs:32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1081pF @ 25V
Power - Max:38W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-1205, 8-LFPAK56
Supplier Device Package:LFPAK56D
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