2N7002V-7
  • Share:

Diodes Incorporated 2N7002V-7

Manufacturer No:
2N7002V-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.28A SOT-563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002V-7, produced by Diodes Incorporated, is a part of the 2N7002 series of N-Channel Enhancement Mode MOSFETs. This device is designed to offer low on-state resistance and superior switching performance, making it ideal for high-efficiency power management applications. It is available in a small surface mount package, specifically the SOT-23-3 package, which enhances its suitability for compact and efficient designs.

Key Specifications

ParameterValueUnit
FET TypeN-Channel
Drain-to-Source Voltage (Vdss)60V
Drain-Source On Resistance (Rds(on))7.5Ω
Rated Power Dissipation200mW
Continuous Drain Current (Id)115mA
Gate Threshold Voltage (Vgs(th))2.5V
Input Capacitance (Ciss)50pF
Operating and Storage Temperature Range-55 to 150°C
Package StyleSOT-23 (SC-59, TO-236)
Mounting MethodSurface Mount

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT-23-3)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free
  • Operating and Storage Temperature Range: -55 to 150 °C

Applications

  • Motor Control
  • Power Management Functions
  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications

Q & A

  1. What is the drain-to-source voltage rating of the 2N7002V-7 MOSFET?
    The drain-to-source voltage rating is 60 V.
  2. What is the maximum drain current for the 2N7002V-7?
    The maximum continuous drain current is 115 mA at 25°C.
  3. What is the typical on-state resistance of the 2N7002V-7?
    The typical on-state resistance (Rds(on)) is 7.5 Ω at Vgs = 10 V and Id = 500 mA.
  4. What is the gate threshold voltage of the 2N7002V-7?
    The gate threshold voltage (Vgs(th)) is typically 2.5 V.
  5. What is the input capacitance of the 2N7002V-7?
    The input capacitance (Ciss) is 50 pF at Vds = 25 V.
  6. What is the operating temperature range of the 2N7002V-7?
    The operating and storage temperature range is -55 to 150 °C.
  7. Is the 2N7002V-7 RoHS compliant?
    Yes, the 2N7002V-7 is totally lead-free and fully RoHS compliant.
  8. What package type is the 2N7002V-7 available in?
    The 2N7002V-7 is available in the SOT-23-3 package.
  9. What are some common applications for the 2N7002V-7?
    Common applications include motor control, power management functions, and other switching applications.
  10. Is the 2N7002V-7 suitable for high-efficiency power management?
    Yes, the 2N7002V-7 is designed to minimize on-state resistance and maintain superior switching performance, making it ideal for high-efficiency power management applications.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:280mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:150mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

-
470

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002V-7 2N7002VA-7 2N7002VC-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active
FET Type 2 N-Channel (Dual) - 2 N-Channel (Dual)
FET Feature Standard - Standard
Drain to Source Voltage (Vdss) 60V - 60V
Current - Continuous Drain (Id) @ 25°C 280mA - 280mA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V - 50pF @ 25V
Power - Max 150mW - 150mW
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Package / Case SOT-563, SOT-666 - SOT-563, SOT-666
Supplier Device Package SOT-563 - SOT-563

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
NTMD4840NR2G
NTMD4840NR2G
onsemi
MOSFET 2N-CH 30V 4.5A 8SOIC
NTMFD4C20NT1G
NTMFD4C20NT1G
onsemi
MOSFET 2N-CH 30V SO8FL
FDD8424H
FDD8424H
onsemi
MOSFET N/P-CH 40V 9A/6.5A DPAK
FDC6306P
FDC6306P
onsemi
MOSFET 2P-CH 20V 1.9A SSOT6
BUK7K6R8-40E,115
BUK7K6R8-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
CSD87501LT
CSD87501LT
Texas Instruments
MOSFET 2N-CH 30V 10PICOSTAR
STL15DN4F5
STL15DN4F5
STMicroelectronics
MOSFET 2N-CH 40V 60A POWERFLAT
NTGD4167CT1G
NTGD4167CT1G
onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
NVMFD5873NLT1G
NVMFD5873NLT1G
onsemi
MOSFET 2N-CH 60V 10A SO8FL
NTLUD3A50PZTAGHW
NTLUD3A50PZTAGHW
onsemi
MOSFET 2P-CH 20V 2.8A UDFN

Related Product By Brand

BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MBR10100CT-G1
MBR10100CT-G1
Diodes Incorporated
DIODE SCHOTT 100V 5A TO220AB
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZX84B4V7Q-7-F
BZX84B4V7Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C3V9T-7-F
BZX84C3V9T-7-F
Diodes Incorporated
DIODE ZENER 3.9V 150MW SOT523
BZX84C2V4-7
BZX84C2V4-7
Diodes Incorporated
DIODE ZENER 2.4V 300MW SOT23-3
BC846BW-7-F
BC846BW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
MMBT3904FZ-7B
MMBT3904FZ-7B
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
MMBT3904-7
MMBT3904-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
BSS123TC
BSS123TC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3