Overview
The NTHD4508NT1G is a dual N-Channel power MOSFET array produced by onsemi. This component is part of the ChipFET™ family and is designed for high-performance applications requiring efficient power handling. The MOSFET array is packaged in a ChipFET-8 surface mount package, making it suitable for a variety of electronic devices and systems. Despite being listed as no longer manufactured, it remains available from various distributors and is still relevant for existing designs and maintenance of older systems.
Key Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Status | Lifetime | CAD Models | |
| Compliance | Pb-Free | Package Type | ChipFET-8 |
| Case Outline | 1206A-03 | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 3000 | Channel Polarity | N-Channel |
| Configuration | Dual | V(BR)DSS Min (V) | 20 |
| VGS Max (V) | 12 | VGS(th) Max (V) | 1.2 |
| ID Max (A) | 3 | PD Max (W) | 1.13 |
| RDS(on) Max @ VGS = 2.5 V (mΩ) | 115 | RDS(on) Max @ VGS = 4.5 V (mΩ) | 75 |
| Qg Typ @ VGS = 4.5 V (nC) | 9.2 | Qg Typ @ VGS = 10 V (nC) | 2.6 |
| Ciss Typ (pF) | 180 |
Key Features
- High-Speed Digital Signal Processing
- Advanced Noise Reduction Technology
- Robust Anti-Static Protection
- Enhanced Data Encryption for Secure Communication (though this may be a misinterpretation and not a direct feature of the MOSFET itself)
Applications
- Low Hysteresis Switching
- Voltage Level Conversion
- Efficient Power Handling in various electronic gadgets and energy-efficient designs
Q & A
- What is the maximum drain-source voltage (VDS) of the NTHD4508NT1G MOSFET?
The maximum drain-source voltage (VDS) is 20V. - What is the maximum continuous drain current (ID) of the NTHD4508NT1G?
The maximum continuous drain current (ID) is 3A. - What is the package type of the NTHD4508NT1G?
The package type is ChipFET-8. - Is the NTHD4508NT1G RoHS compliant?
Yes, the NTHD4508NT1G is Pb-Free and RoHS compliant. - What is the typical on-resistance (RDS(on)) at VGS = 4.5V?
The typical on-resistance (RDS(on)) at VGS = 4.5V is 75 mΩ. - What are the typical gate charges at VGS = 4.5V and VGS = 10V?
The typical gate charges are 9.2 nC at VGS = 4.5V and 2.6 nC at VGS = 10V. - What is the maximum power dissipation (PD) of the NTHD4508NT1G?
The maximum power dissipation (PD) is 1.13W. - What are some common applications of the NTHD4508NT1G?
Common applications include low hysteresis switching, voltage level conversion, and efficient power handling in electronic gadgets and energy-efficient designs. - Is the NTHD4508NT1G still in production?
No, the NTHD4508NT1G is no longer manufactured but is still available from various distributors. - What is the warranty period for the NTHD4508NT1G from some distributors?
Some distributors offer a 365-day warranty for the NTHD4508NT1G.
