Overview
The NTZD5110NT1G is a dual N-Channel MOSFET with ESD protection, manufactured by onsemi. This small signal MOSFET is designed for high efficiency and reliability in various applications. It features a low RDS(on) to improve system efficiency and a low threshold voltage for easy switching. The device is packaged in a small SOT-563 footprint, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 294 | mA |
| Continuous Drain Current (TA = 85°C) | ID | 212 | mA |
| Power Dissipation (Steady State) | PD | 250 | mW |
| Pulsed Drain Current (tp = 10 μs) | IDM | 590 | mA |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to 150 | °C |
| Gate-Source ESD Rating (HBM, Method 3015) | ESD | 1800 | V |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 500 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 2.5 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 500 mA) | RDS(on) | 1.19 to 1.6 | Ω |
Key Features
- Low RDS(on) improving system efficiency
- Low threshold voltage for easy switching
- ESD protected gate for enhanced reliability
- Small footprint (SOT-563 package, 1.6 x 1.6 mm)
- Pb-Free devices
- High junction-to-ambient thermal resistance
- Low gate-source leakage current
Applications
- Load/Power Switches
- Driver Circuits: Relays, Lamps, Displays, Memories, etc.
- Battery Management/Battery Operated Systems
- Cell Phones, Digital Cameras, PDAs, Pagers, etc.
Q & A
- What is the maximum drain-to-source voltage of the NTZD5110NT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 294 mA at 25°C and 212 mA at 85°C.
- What is the power dissipation rating for steady state operation?
The power dissipation rating is 250 mW for steady state operation.
- What is the gate-source ESD rating of the NTZD5110NT1G?
The gate-source ESD rating is 1800 V (HBM, Method 3015).
- What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 500 mA?
The typical on-resistance (RDS(on)) is 1.19 to 1.6 Ω at VGS = 10 V and ID = 500 mA.
- What are the operating junction and storage temperature ranges?
The operating junction and storage temperature ranges are from −55°C to 150°C.
- What is the package type and dimensions of the NTZD5110NT1G?
The package type is SOT-563, with dimensions of 1.6 x 1.2 x 0.55 mm.
- Is the NTZD5110NT1G Pb-Free?
- What are some typical applications for the NTZD5110NT1G MOSFET?
Typical applications include load/power switches, driver circuits, battery management systems, and portable electronic devices like cell phones and digital cameras.
- What is the junction-to-ambient thermal resistance of the NTZD5110NT1G?
The junction-to-ambient thermal resistance (RθJA) is 500 °C/W for steady state operation.
