Overview
The FDC6333C-G, produced by onsemi, is a dual N and P-channel MOSFET designed using the advanced POWERTRENCH process. This technology minimizes on-state resistance while maintaining superior switching performance. The device is packaged in a SUPERSOT-6 package, which offers a small footprint and low profile, making it ideal for applications where larger packages are impractical.
Key Specifications
| Parameter | Q1 (N-Channel) | Q2 (P-Channel) |
|---|---|---|
| Drain-Source Voltage (VDSS) | 30 V | -30 V |
| Gate-Source Voltage (VGSS) | ±16 V | ±25 V |
| Continuous Drain Current (ID) | 2.5 A | -2.0 A |
| Pulsed Drain Current (ID) | 8 A | -8 A |
| Power Dissipation (PD) | 0.96 W | 0.9 W |
| On-State Resistance (RDS(on)) @ VGS = 10 V | 95 mΩ | 130 mΩ |
| On-State Resistance (RDS(on)) @ VGS = 4.5 V | 150 mΩ | 220 mΩ |
| Operating Junction Temperature (TJ) | -55 to +150 °C | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient (RJA) | 130 °C/W | 130 °C/W |
Key Features
- Low on-state resistance (RDS(on)) for efficient power handling.
- High performance trench technology for extremely low RDS(on).
- Low gate charge for fast switching times.
- SUPERSOT-6 package: small footprint (72% smaller than SO-8) and low profile (1 mm thick).
- Pb-free device, compliant with environmental regulations.
Applications
- DC-DC converters.
- Load switches.
- LCD display inverters.
Q & A
- What is the FDC6333C-G MOSFET used for?
The FDC6333C-G is used in applications such as DC-DC converters, load switches, and LCD display inverters due to its low on-state resistance and high switching performance.
- What is the maximum drain-source voltage for the N-channel and P-channel MOSFETs in the FDC6333C-G?
The maximum drain-source voltage (VDSS) for the N-channel is 30 V and for the P-channel is -30 V.
- What is the continuous drain current rating for the N-channel and P-channel MOSFETs?
The continuous drain current (ID) for the N-channel is 2.5 A and for the P-channel is -2.0 A.
- What is the thermal resistance, junction-to-ambient (RJA), for the FDC6333C-G?
The thermal resistance, junction-to-ambient (RJA), is 130 °C/W.
- What package type is used for the FDC6333C-G?
The FDC6333C-G is packaged in a SUPERSOT-6 package, which is smaller and has a lower profile compared to SO-8 packages.
- Is the FDC6333C-G Pb-free?
- What are the typical on-state resistances for the N-channel and P-channel MOSFETs at different gate-source voltages?
For the N-channel, RDS(on) is 95 mΩ at VGS = 10 V and 150 mΩ at VGS = 4.5 V. For the P-channel, RDS(on) is 130 mΩ at VGS = -10 V and 220 mΩ at VGS = -4.5 V.
- What are the operating and storage junction temperature ranges for the FDC6333C-G?
The operating and storage junction temperature range is -55 to +150 °C.
- How does the SUPERSOT-6 package benefit the design?
The SUPERSOT-6 package offers a significantly smaller footprint (72% smaller than SO-8) and a lower profile (1 mm thick), making it ideal for space-constrained applications.
- What are the typical gate charge values for the N-channel and P-channel MOSFETs?
The total gate charge (Qg) for the N-channel is approximately 4.7 nC, and for the P-channel, it is approximately 4.1 nC.
