PMDPB55XP,115
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Nexperia USA Inc. PMDPB55XP,115

Manufacturer No:
PMDPB55XP,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 3.4A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB55XP,115 is a dual P-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of discrete semiconductor devices, known for their high efficiency and reliability. Nexperia, a global leader in Discretes, Logic, and MOSFETs, has been independent since 2017 and is built on over half a century of expertise, supporting customers globally with 11,000 employees across Asia, Europe, and the U.S.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)3.5 A
RDS(on) (Drain-Source On-Resistance)55 mΩ
Ptot (Total Power Dissipation)1.5 W
TJ (Junction Temperature)-55 to 150 °C
Package2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package
Exposed Drain PadYes

Key Features

  • Very Fast Switching: The PMDPB55XP,115 features very fast switching times, making it suitable for high-frequency applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • Small and Leadless Package: The component is housed in a small and leadless ultra thin SMD plastic package (2 x 2 x 0.65 mm), which enhances thermal efficiency and reduces space requirements.
  • Exposed Drain Pad: Includes an exposed drain pad for better thermal dissipation.

Applications

The PMDPB55XP,115 is suitable for a variety of applications, including but not limited to:

  • Automotive Systems: Given its high reliability and compliance with automotive standards, it is often used in automotive electronics.
  • Power Management: Ideal for power management circuits due to its low on-resistance and fast switching capabilities.
  • Industrial Control Systems: Used in industrial control systems where high efficiency and reliability are crucial.

Q & A

  1. What is the drain-source voltage rating of the PMDPB55XP,115?
    The drain-source voltage (VDS) rating is 20 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 3.5 A.
  3. What is the on-resistance (RDS(on)) of the PMDPB55XP,115?
    The on-resistance (RDS(on)) is 55 mΩ.
  4. What type of package does the PMDPB55XP,115 come in?
    The component is housed in a 2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package.
  5. Does the PMDPB55XP,115 have an exposed drain pad?
    Yes, it includes an exposed drain pad for better thermal dissipation.
  6. What are the typical applications for the PMDPB55XP,115?
    It is typically used in automotive systems, power management circuits, and industrial control systems.
  7. Who is the manufacturer of the PMDPB55XP,115?
    The PMDPB55XP,115 is manufactured by Nexperia USA Inc.
  8. What technology is used in the PMDPB55XP,115?
    The PMDPB55XP,115 utilizes Trench MOSFET technology.
  9. What is the junction temperature range for the PMDPB55XP,115?
    The junction temperature range is -55 to 150 °C.
  10. Where can I purchase the PMDPB55XP,115?
    You can purchase the PMDPB55XP,115 from various distributors such as DigiKey, Mouser Electronics, and Arrow Electronics.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:70mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:785pF @ 10V
Power - Max:490mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
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