PMDPB55XP,115
  • Share:

Nexperia USA Inc. PMDPB55XP,115

Manufacturer No:
PMDPB55XP,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 3.4A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB55XP,115 is a dual P-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of discrete semiconductor devices, known for their high efficiency and reliability. Nexperia, a global leader in Discretes, Logic, and MOSFETs, has been independent since 2017 and is built on over half a century of expertise, supporting customers globally with 11,000 employees across Asia, Europe, and the U.S.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)3.5 A
RDS(on) (Drain-Source On-Resistance)55 mΩ
Ptot (Total Power Dissipation)1.5 W
TJ (Junction Temperature)-55 to 150 °C
Package2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package
Exposed Drain PadYes

Key Features

  • Very Fast Switching: The PMDPB55XP,115 features very fast switching times, making it suitable for high-frequency applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • Small and Leadless Package: The component is housed in a small and leadless ultra thin SMD plastic package (2 x 2 x 0.65 mm), which enhances thermal efficiency and reduces space requirements.
  • Exposed Drain Pad: Includes an exposed drain pad for better thermal dissipation.

Applications

The PMDPB55XP,115 is suitable for a variety of applications, including but not limited to:

  • Automotive Systems: Given its high reliability and compliance with automotive standards, it is often used in automotive electronics.
  • Power Management: Ideal for power management circuits due to its low on-resistance and fast switching capabilities.
  • Industrial Control Systems: Used in industrial control systems where high efficiency and reliability are crucial.

Q & A

  1. What is the drain-source voltage rating of the PMDPB55XP,115?
    The drain-source voltage (VDS) rating is 20 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 3.5 A.
  3. What is the on-resistance (RDS(on)) of the PMDPB55XP,115?
    The on-resistance (RDS(on)) is 55 mΩ.
  4. What type of package does the PMDPB55XP,115 come in?
    The component is housed in a 2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package.
  5. Does the PMDPB55XP,115 have an exposed drain pad?
    Yes, it includes an exposed drain pad for better thermal dissipation.
  6. What are the typical applications for the PMDPB55XP,115?
    It is typically used in automotive systems, power management circuits, and industrial control systems.
  7. Who is the manufacturer of the PMDPB55XP,115?
    The PMDPB55XP,115 is manufactured by Nexperia USA Inc.
  8. What technology is used in the PMDPB55XP,115?
    The PMDPB55XP,115 utilizes Trench MOSFET technology.
  9. What is the junction temperature range for the PMDPB55XP,115?
    The junction temperature range is -55 to 150 °C.
  10. Where can I purchase the PMDPB55XP,115?
    You can purchase the PMDPB55XP,115 from various distributors such as DigiKey, Mouser Electronics, and Arrow Electronics.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:70mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:785pF @ 10V
Power - Max:490mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
0 Remaining View Similar

In Stock

$0.16
6,103

Please send RFQ , we will respond immediately.

Related Product By Categories

ECH8667-TL-HX-SA
ECH8667-TL-HX-SA
Sanyo
P-CHANNEL SILICON MOSFET
FDMC8010A
FDMC8010A
Fairchild Semiconductor
1-ELEMENT, N-CHANNEL
BSS138DW-7-F
BSS138DW-7-F
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
FDS4559
FDS4559
onsemi
MOSFET N/P-CH 60V 4.5/3.5A 8SOIC
BSS84AKS,115
BSS84AKS,115
Nexperia USA Inc.
MOSFET 2P-CH 50V 0.16A 6TSSOP
PMDXB550UNEZ
PMDXB550UNEZ
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.59A 6DFN
FDMQ8203
FDMQ8203
onsemi
MOSFET 2N/2P-CH 100V/80V 12-MLP
NVMFD5C466NLWFT1G
NVMFD5C466NLWFT1G
onsemi
MOSFET 2N-CH 40V 52A S08FL
2N7002PSZ
2N7002PSZ
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
AO3415B
AO3415B
Alpha & Omega Semiconductor Inc.
MOSFET 2P-CH 30V 6A 8-SOIC
NVMD6N04R2G
NVMD6N04R2G
onsemi
MOSFET 2N-CH 40V 4.6A 8-SOIC

Related Product By Brand

PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BC847BS/ZLF
BC847BS/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74HC237D-Q100J
74HC237D-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP
BAS116H
BAS116H
Nexperia USA Inc.
NOW NEXPERIA BAS116H - RECTIFIER