PMDPB55XP,115
  • Share:

Nexperia USA Inc. PMDPB55XP,115

Manufacturer No:
PMDPB55XP,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 3.4A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB55XP,115 is a dual P-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of discrete semiconductor devices, known for their high efficiency and reliability. Nexperia, a global leader in Discretes, Logic, and MOSFETs, has been independent since 2017 and is built on over half a century of expertise, supporting customers globally with 11,000 employees across Asia, Europe, and the U.S.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)3.5 A
RDS(on) (Drain-Source On-Resistance)55 mΩ
Ptot (Total Power Dissipation)1.5 W
TJ (Junction Temperature)-55 to 150 °C
Package2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package
Exposed Drain PadYes

Key Features

  • Very Fast Switching: The PMDPB55XP,115 features very fast switching times, making it suitable for high-frequency applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • Small and Leadless Package: The component is housed in a small and leadless ultra thin SMD plastic package (2 x 2 x 0.65 mm), which enhances thermal efficiency and reduces space requirements.
  • Exposed Drain Pad: Includes an exposed drain pad for better thermal dissipation.

Applications

The PMDPB55XP,115 is suitable for a variety of applications, including but not limited to:

  • Automotive Systems: Given its high reliability and compliance with automotive standards, it is often used in automotive electronics.
  • Power Management: Ideal for power management circuits due to its low on-resistance and fast switching capabilities.
  • Industrial Control Systems: Used in industrial control systems where high efficiency and reliability are crucial.

Q & A

  1. What is the drain-source voltage rating of the PMDPB55XP,115?
    The drain-source voltage (VDS) rating is 20 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 3.5 A.
  3. What is the on-resistance (RDS(on)) of the PMDPB55XP,115?
    The on-resistance (RDS(on)) is 55 mΩ.
  4. What type of package does the PMDPB55XP,115 come in?
    The component is housed in a 2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package.
  5. Does the PMDPB55XP,115 have an exposed drain pad?
    Yes, it includes an exposed drain pad for better thermal dissipation.
  6. What are the typical applications for the PMDPB55XP,115?
    It is typically used in automotive systems, power management circuits, and industrial control systems.
  7. Who is the manufacturer of the PMDPB55XP,115?
    The PMDPB55XP,115 is manufactured by Nexperia USA Inc.
  8. What technology is used in the PMDPB55XP,115?
    The PMDPB55XP,115 utilizes Trench MOSFET technology.
  9. What is the junction temperature range for the PMDPB55XP,115?
    The junction temperature range is -55 to 150 °C.
  10. Where can I purchase the PMDPB55XP,115?
    You can purchase the PMDPB55XP,115 from various distributors such as DigiKey, Mouser Electronics, and Arrow Electronics.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:70mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:785pF @ 10V
Power - Max:490mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
0 Remaining View Similar

In Stock

$0.16
6,103

Please send RFQ , we will respond immediately.

Related Product By Categories

STS4DPF20L
STS4DPF20L
STMicroelectronics
MOSFET 2P-CH 20V 4A 8SOIC
CSD87588N
CSD87588N
Texas Instruments
MOSFET 2N-CH 30V 25A 5PTAB
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
FDPC8016S
FDPC8016S
onsemi
MOSFET 2N-CH 25V 8PWRCLIP
NTHD4102PT1G
NTHD4102PT1G
onsemi
MOSFET 2P-CH 20V 2.9A CHIPFET
NX7002BKW,115
NX7002BKW,115
Nexperia USA Inc.
0.24A, 60V, N CHANNEL MOSFET, SC
PMZB290UNE2315
PMZB290UNE2315
NXP USA Inc.
1A, 20V, N CHANNEL, MOSFET, XQF
NVJD5121NT1G-M06
NVJD5121NT1G-M06
onsemi
NFET SC88 60V 295MA 1.6OH
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
NTZD3154NT2G
NTZD3154NT2G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
NTJD4001NT2G
NTJD4001NT2G
onsemi
MOSFET 2N-CH 30V 0.25A SOT363
NTLUD3A50PZTAGHW
NTLUD3A50PZTAGHW
onsemi
MOSFET 2P-CH 20V 2.8A UDFN

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
PMEG2020EH/6X
PMEG2020EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BC850CW/ZLX
BC850CW/ZLX
Nexperia USA Inc.
TRANS NPN SOT323
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74LV4060PW-Q100J
74LV4060PW-Q100J
Nexperia USA Inc.
IC COUNTER 14STAGE BIN 16TSSOP
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO