PMDPB55XP,115
  • Share:

Nexperia USA Inc. PMDPB55XP,115

Manufacturer No:
PMDPB55XP,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 3.4A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB55XP,115 is a dual P-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of discrete semiconductor devices, known for their high efficiency and reliability. Nexperia, a global leader in Discretes, Logic, and MOSFETs, has been independent since 2017 and is built on over half a century of expertise, supporting customers globally with 11,000 employees across Asia, Europe, and the U.S.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)3.5 A
RDS(on) (Drain-Source On-Resistance)55 mΩ
Ptot (Total Power Dissipation)1.5 W
TJ (Junction Temperature)-55 to 150 °C
Package2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package
Exposed Drain PadYes

Key Features

  • Very Fast Switching: The PMDPB55XP,115 features very fast switching times, making it suitable for high-frequency applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • Small and Leadless Package: The component is housed in a small and leadless ultra thin SMD plastic package (2 x 2 x 0.65 mm), which enhances thermal efficiency and reduces space requirements.
  • Exposed Drain Pad: Includes an exposed drain pad for better thermal dissipation.

Applications

The PMDPB55XP,115 is suitable for a variety of applications, including but not limited to:

  • Automotive Systems: Given its high reliability and compliance with automotive standards, it is often used in automotive electronics.
  • Power Management: Ideal for power management circuits due to its low on-resistance and fast switching capabilities.
  • Industrial Control Systems: Used in industrial control systems where high efficiency and reliability are crucial.

Q & A

  1. What is the drain-source voltage rating of the PMDPB55XP,115?
    The drain-source voltage (VDS) rating is 20 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 3.5 A.
  3. What is the on-resistance (RDS(on)) of the PMDPB55XP,115?
    The on-resistance (RDS(on)) is 55 mΩ.
  4. What type of package does the PMDPB55XP,115 come in?
    The component is housed in a 2 x 2 x 0.65 mm, leadless ultra thin SMD plastic package.
  5. Does the PMDPB55XP,115 have an exposed drain pad?
    Yes, it includes an exposed drain pad for better thermal dissipation.
  6. What are the typical applications for the PMDPB55XP,115?
    It is typically used in automotive systems, power management circuits, and industrial control systems.
  7. Who is the manufacturer of the PMDPB55XP,115?
    The PMDPB55XP,115 is manufactured by Nexperia USA Inc.
  8. What technology is used in the PMDPB55XP,115?
    The PMDPB55XP,115 utilizes Trench MOSFET technology.
  9. What is the junction temperature range for the PMDPB55XP,115?
    The junction temperature range is -55 to 150 °C.
  10. Where can I purchase the PMDPB55XP,115?
    You can purchase the PMDPB55XP,115 from various distributors such as DigiKey, Mouser Electronics, and Arrow Electronics.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:70mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:785pF @ 10V
Power - Max:490mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
0 Remaining View Similar

In Stock

$0.16
6,103

Please send RFQ , we will respond immediately.

Related Product By Categories

2N7002VA-7
2N7002VA-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
2N7002PS/ZLX
2N7002PS/ZLX
NXP Semiconductors
NEXPERIA 2N7002PS - 60 V, 320 MA
BSS138PS,115
BSS138PS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
2N7002PS,125
2N7002PS,125
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
NTJD4105CT1G
NTJD4105CT1G
onsemi
MOSFET N/P-CH 20V/8V SOT-363
2N7002V
2N7002V
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
NTLUD4C26NTAG
NTLUD4C26NTAG
onsemi
MOSFET 2 N-CH 30V 9.1A 6UDFN
FDMC8097AC
FDMC8097AC
onsemi
MOSFET N/P-CH 150V
2N7002VA-7-F
2N7002VA-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
FDG6301N-F085
FDG6301N-F085
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
2N7002DW-7-F-79
2N7002DW-7-F-79
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
FDC6333C-G
FDC6333C-G
onsemi
MOSFET N-CH 60V SUPERSOT6

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HC11PW,118
74HC11PW,118
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14TSSOP
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74HC2GU04GW-Q100H
74HC2GU04GW-Q100H
Nexperia USA Inc.
IC INVERTER 2CH 2-INP 6TSSOP
BZV55-C39
BZV55-C39
Nexperia USA Inc.
BZV55 SERIES - VOLTAGE REGULATOR