Overview
The FDS4559-F085 is a complementary PowerTrench MOSFET device produced by onsemi. This device is designed using onsemi’s advanced PowerTrench process, which minimizes on-state resistance while maintaining low gate charge for superior switching performance. The FDS4559-F085 consists of an N-Channel and a P-Channel MOSFET, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Q1 (N-Channel) | Q2 (P-Channel) | Unit |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 60 | -60 | V |
| Gate-Source Voltage (VGSS) | ±20 | ±20 | V |
| Drain Current (ID) - Continuous | 4.5 | -3.5 | A |
| Drain Current (ID) - Pulsed | 20 | -20 | A |
| Power Dissipation for Dual Operation | 2 | W | |
| Power Dissipation for Single Operation | 1.6 | 1.2 | W |
| Operating and Storage Junction Temperature Range | -55 to +175 | °C | |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 78 | °C/W | |
| Thermal Resistance, Junction-to-Case (RθJC) | 40 | °C/W | |
| On-State Resistance (RDS(on)) @ VGS = 10V | 55 mΩ | 105 mΩ | mΩ |
| On-State Resistance (RDS(on)) @ VGS = 4.5V | 75 mΩ | 135 mΩ | mΩ |
Key Features
- Complementary MOSFET device with N-Channel and P-Channel configurations.
- Produced using onsemi’s advanced PowerTrench process for low on-state resistance and low gate charge.
- N-Channel: 4.5 A, 60 V with RDS(on) = 55 mΩ @ VGS = 10V and RDS(on) = 75 mΩ @ VGS = 4.5V.
- P-Channel: -3.5 A, -60 V with RDS(on) = 105 mΩ @ VGS = -10V and RDS(on) = 135 mΩ @ VGS = -4.5V.
- Pb-Free and Halide Free device.
- Low thermal resistance and high power dissipation capabilities.
Applications
- DC/DC converters.
- Power management systems.
- LCD backlight inverters.
Q & A
- What is the FDS4559-F085 MOSFET device?
The FDS4559-F085 is a complementary PowerTrench MOSFET device consisting of an N-Channel and a P-Channel MOSFET, designed for superior switching performance.
- What are the key specifications of the N-Channel and P-Channel MOSFETs?
The N-Channel has a drain-source voltage of 60V, continuous drain current of 4.5A, and on-state resistance of 55 mΩ @ VGS = 10V. The P-Channel has a drain-source voltage of -60V, continuous drain current of -3.5A, and on-state resistance of 105 mΩ @ VGS = -10V.
- What are the thermal characteristics of the FDS4559-F085?
The device has a thermal resistance, junction-to-ambient (RθJA) of 78 °C/W and junction-to-case (RθJC) of 40 °C/W.
- What are the typical applications of the FDS4559-F085?
The device is typically used in DC/DC converters, power management systems, and LCD backlight inverters.
- Is the FDS4559-F085 Pb-Free and Halide Free?
- What is the operating and storage junction temperature range for the FDS4559-F085?
The operating and storage junction temperature range is -55 to +175 °C.
- What is the power dissipation capability of the FDS4559-F085 for dual and single operations?
The power dissipation for dual operation is 2 W, and for single operation, it is 1.6 W for the N-Channel and 1.2 W for the P-Channel.
- What are the switching characteristics of the FDS4559-F085?
The device has turn-on delay times of 11-20 ns for the N-Channel and 7-14 ns for the P-Channel, and turn-off delay times of 19-35 ns for the N-Channel and 19-34 ns for the P-Channel.
- What is the gate charge of the FDS4559-F085?
The total gate charge is 12.5-18 nC for the N-Channel and 15-21 nC for the P-Channel.
- What package type is the FDS4559-F085 available in?
The device is available in an SOIC8 package.
