Overview
The NVMFD5C466NLT1G is a dual N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. With a small footprint of 5x6 mm, it is ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, aligning with environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (RJC, TC = 25°C) | ID | 52 | A |
| Continuous Drain Current (RJA, TA = 25°C) | ID | 15 | A |
| Power Dissipation (RJC, TC = 25°C) | PD | 38 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 198 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 10 A | RDS(on) | 7.4 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 to 2.2 | V |
Key Features
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flank Option for Enhanced Optical Inspection (NVMFD5C466NLWF)
- AEC-Q101 Qualified and PPAP Capable
- Pb-free and RoHS Compliant
Applications
The NVMFD5C466NLT1G is suitable for a variety of high-performance applications, including:
- Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power Supplies: Its low on-resistance and high current handling make it suitable for high-efficiency power supply designs.
- Motor Control: Used in motor drive applications requiring high current and low losses.
- Industrial Control: Suitable for industrial control systems that require reliable and efficient power switching.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFD5C466NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current rating at 25°C is 52 A for RJC and 15 A for RJA.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 10 A?
The typical on-resistance (RDS(on)) is 7.4 mΩ.
- Is the NVMFD5C466NLT1G AEC-Q101 qualified?
Yes, the NVMFD5C466NLT1G is AEC-Q101 qualified.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175°C.
- What is the package type of the NVMFD5C466NLT1G?
The package type is DFN8 (5x6 mm).
- Is the NVMFD5C466NLT1G Pb-free and RoHS compliant?
Yes, the NVMFD5C466NLT1G is Pb-free and RoHS compliant.
- What is the maximum pulsed drain current rating?
The maximum pulsed drain current rating at 25°C for 10 μs is 198 A.
- What are the typical switching times for turn-on and turn-off?
The typical turn-on delay time is 10 ns, and the typical turn-off delay time is 26 ns.
- What is the gate threshold voltage range?
The gate threshold voltage range is 1.2 to 2.2 V.
