Overview
The NVMFD5C446NLT1G is a dual N-channel power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high current handling. This device features a compact 5x6 mm DFN8 package, making it ideal for space-constrained designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. The MOSFET is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 145 | A |
| Continuous Drain Current (TC = 100°C) | ID | 105 | A |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V | RDS(on) | 2.9 mΩ | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 1.38 °C/W | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 46.9 °C/W | °C/W |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 °C | °C |
Key Features
- Small Footprint: Compact 5x6 mm DFN8 package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with a low on-resistance of 2.9 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses due to low gate charge and capacitance.
- Wettable Flank Option: NVMFD5C446NLWF version offers enhanced optical inspection capabilities.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-free and RoHS Compliant: Aligns with environmental regulations.
Applications
The NVMFD5C446NLT1G is suitable for a variety of high-power applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Industrial power supplies: Its high current handling and low on-resistance make it suitable for high-power industrial applications.
- Motor control: Used in motor drive systems requiring high efficiency and reliability.
- Power management: Suitable for power management in servers, data centers, and other high-power electronic systems.
Q & A
- What is the maximum drain-to-source voltage of the NVMFD5C446NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V. - What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 145 A. - What is the on-resistance (RDS(on)) of the MOSFET?
The on-resistance (RDS(on)) is 2.9 mΩ at VGS = 10 V. - Is the NVMFD5C446NLT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable. - What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 1.38 °C/W. - Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant. - What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to +175 °C. - What are the typical applications of the NVMFD5C446NLT1G?
Typical applications include automotive systems, industrial power supplies, motor control, and power management in high-power electronic systems. - Does the device have a wettable flank option?
Yes, the NVMFD5C446NLWF version offers a wettable flank option for enhanced optical inspection. - What is the package type of the NVMFD5C446NLT1G?
The package type is DFN8 (5x6 mm).
