Overview
The FDC6312P is a dual P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This technology is designed to minimize on-state resistance, making the MOSFET highly efficient for various applications. The device is specified for low threshold voltage of 1.8V, which is beneficial for low-voltage systems. It is packaged in a SuperSOT-6 package, offering a compact and reliable solution for power management needs.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | P-Channel |
| Drain-Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Id) | 2.3 A |
| On-State Resistance (Rds(on)) | 115 mΩ @ 4.5 V |
| Threshold Voltage (Vth) | 1.8 V |
| Package Type | SuperSOT-6 |
| Power Dissipation (Pd) | 960 mW |
| Gate-Source Threshold Voltage (Vgs(th)) | 400 mV @ 250 μA |
Key Features
The FDC6312P features several key advantages:
- Low On-State Resistance: The PowerTrench process minimizes on-state resistance, enhancing efficiency and reducing power losses.
- Low Threshold Voltage: Specified for 1.8V, making it suitable for low-voltage applications.
- Compact Packaging: The SuperSOT-6 package provides a space-saving solution while maintaining high performance.
- High Current Capability: Continuous drain current of 2.3 A supports a wide range of power management needs.
Applications
The FDC6312P is versatile and can be used in various applications, including:
- Power Management Systems: Ideal for voltage regulation, power switching, and load management in low-voltage systems.
- Consumer Electronics: Suitable for use in portable devices, audio equipment, and other consumer electronics requiring efficient power handling.
- Industrial Control Systems: Can be used in motor control, power supplies, and other industrial applications where reliable and efficient power management is crucial.
Q & A
- What is the channel type of the FDC6312P MOSFET?
The FDC6312P is a P-Channel MOSFET.
- What is the maximum drain-source voltage (Vds) for the FDC6312P?
The maximum drain-source voltage (Vds) is 20 V.
- What is the continuous drain current (Id) rating of the FDC6312P?
The continuous drain current (Id) rating is 2.3 A.
- What is the on-state resistance (Rds(on)) of the FDC6312P?
The on-state resistance (Rds(on)) is 115 mΩ @ 4.5 V.
- What is the threshold voltage (Vth) of the FDC6312P?
The threshold voltage (Vth) is specified for 1.8 V.
- What package type is used for the FDC6312P?
The FDC6312P is packaged in a SuperSOT-6 package.
- What is the power dissipation (Pd) rating of the FDC6312P?
The power dissipation (Pd) rating is 960 mW.
- What is the gate-source threshold voltage (Vgs(th)) of the FDC6312P?
The gate-source threshold voltage (Vgs(th)) is 400 mV @ 250 μA.
- What are some common applications for the FDC6312P?
The FDC6312P is commonly used in power management systems, consumer electronics, and industrial control systems.
- Why is the PowerTrench process beneficial for the FDC6312P?
The PowerTrench process minimizes on-state resistance, enhancing efficiency and reducing power losses.
