2N7002VA-7
  • Share:

Diodes Incorporated 2N7002VA-7

Manufacturer No:
2N7002VA-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.28A SOT-563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002VA-7 is a dual N-channel enhancement mode field effect transistor (MOSFET) produced by Diodes Incorporated. This device is designed to offer high efficiency and reliability in various power management and switching applications. It features a low on-resistance, low gate threshold voltage, and fast switching speed, making it ideal for high-performance electronic systems. The 2N7002VA-7 is packaged in a small SOT-563 surface mount package and is fully RoHS compliant, lead-free, and halogen-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Characteristic Symbol Value Units Test Conditions
Drain-Source Voltage VDSS 60 V VGS = 0V, ID = 10µA
Gate-Source Voltage (Continuous) VGSS ±20 V
Gate-Source Voltage (Pulsed) VGSS ±40 V
Continuous Drain Current ID 280 mA VGS = 10V, TA = +25°C
Pulsed Drain Current ID 1.5 A
Gate Threshold Voltage VGS(th) 1.00 - 2.50 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(on) 1.6 - 7.5 Ω VGS = 5V, ID = 0.05A
Input Capacitance Ciss 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Junction and Storage Temperature Range TJ, TSTG -55°C to 150°C

Key Features

  • Low On-Resistance: The 2N7002VA-7 features a low on-resistance, which minimizes power losses and enhances efficiency in power management applications.
  • Low Gate Threshold Voltage: This MOSFET has a low gate threshold voltage, making it easier to switch on and off with lower gate drive voltages.
  • Low Input Capacitance: The device has low input capacitance, which contributes to faster switching speeds and better performance in high-frequency applications.
  • Fast Switching Speed: With fast switching times, this MOSFET is suitable for applications requiring quick and efficient switching.
  • Ultra-Small Surface Mount Package: The SOT-563 package is compact, making it ideal for space-constrained designs.
  • Lead-Free and RoHS Compliant: The device is lead-free, halogen-free, and fully RoHS compliant, ensuring environmental sustainability.
  • High Reliability: Qualified to AEC-Q101 standards, this MOSFET is designed for high reliability in automotive and other demanding applications.

Applications

  • Motor Control: The 2N7002VA-7 is suitable for motor control applications due to its high efficiency and fast switching capabilities.
  • Power Management Functions: It is used in various power management functions such as voltage regulation, power switching, and load management.
  • Automotive Systems: With its AEC-Q101 qualification, this MOSFET is reliable for use in automotive systems, including power steering, anti-lock braking systems (ABS), and other control systems.
  • Consumer Electronics: It can be used in consumer electronics for power management and switching applications where high efficiency and reliability are crucial.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002VA-7?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current rating of the 2N7002VA-7 at 25°C?

    The continuous drain current (ID) is 280mA at 25°C.

  3. What is the gate threshold voltage range of the 2N7002VA-7?

    The gate threshold voltage (VGS(th)) ranges from 1.00V to 2.50V.

  4. What is the typical on-resistance of the 2N7002VA-7?

    The static drain-source on-resistance (RDS(on)) is typically between 1.6Ω and 7.5Ω at VGS = 5V and ID = 0.05A).

  5. Is the 2N7002VA-7 RoHS compliant?

    Yes, the 2N7002VA-7 is lead-free, halogen-free, and fully RoHS compliant).

  6. What is the package type of the 2N7002VA-7?

    The device is packaged in a SOT-563 surface mount package).

  7. What are the typical applications of the 2N7002VA-7?

    Typical applications include motor control, power management functions, automotive systems, and consumer electronics).

  8. What is the junction and storage temperature range of the 2N7002VA-7?

    The junction and storage temperature range (TJ, TSTG) is -55°C to 150°C).

  9. Is the 2N7002VA-7 qualified for automotive use?

    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications).

  10. What is the input capacitance of the 2N7002VA-7?

    The input capacitance (Ciss) is 50pF at VDS = 25V, VGS = 0V, and f = 1.0MHz).

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.44
1,626

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002VA-7 2N7002VC-7 2N7002VAC-7 2N7002V-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Obsolete
FET Type - 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature - Standard Standard Standard
Drain to Source Voltage (Vdss) - 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C - 280mA 280mA 280mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V 50pF @ 25V 50pF @ 25V
Power - Max - 150mW 150mW 150mW
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount Surface Mount
Package / Case - SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package - SOT-563 SOT-563 SOT-563

Related Product By Categories

NTJD4401NT1G
NTJD4401NT1G
onsemi
MOSFET 2N-CH 20V 630MA SOT363
NX3020NAKS,115
NX3020NAKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 180MA 6TSSOP
ECH8667-TL-HX-SA
ECH8667-TL-HX-SA
Sanyo
P-CHANNEL SILICON MOSFET
CSD88584Q5DCT
CSD88584Q5DCT
Texas Instruments
MOSFET 2N-CH 40V 22-VSON-CLIP
CSD88599Q5DC
CSD88599Q5DC
Texas Instruments
MOSFET 2 N-CH 60V 22-VSON-CLIP
FDMC8200
FDMC8200
onsemi
MOSFET 2N-CH 30V 8A/12A 8POWER33
PMZB290UNE2315
PMZB290UNE2315
NXP USA Inc.
1A, 20V, N CHANNEL, MOSFET, XQF
FDD8424H-F085A
FDD8424H-F085A
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
NX3020NAKVYL
NX3020NAKVYL
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.2A SOT666
FDG6320C
FDG6320C
onsemi
MOSFET N/P-CH 25V 220/140MA SC88
NTMFD4901NFT1G
NTMFD4901NFT1G
onsemi
MOSFET 2N-CH 30V 8DFN
BSS84AKS/ZLX
BSS84AKS/ZLX
Nexperia USA Inc.
MOSFET 2 P-CH 50V 160MA 6TSSOP

Related Product By Brand

BAV70LP-7
BAV70LP-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA 3XDFN
BZX84C6V8S-7
BZX84C6V8S-7
Diodes Incorporated
DIODE ZENER ARRAY 6.8V SOT363
BZX84C27-7-F
BZX84C27-7-F
Diodes Incorporated
DIODE ZENER 27V 300MW SOT23-3
BZX84C12W-7-F
BZX84C12W-7-F
Diodes Incorporated
DIODE ZENER 12V 200MW SOT323
BZT52HC5V1WF-7
BZT52HC5V1WF-7
Diodes Incorporated
DIODE ZENER 5.1V 375MW SOD123F
BZX84B6V2Q-7-F
BZX84B6V2Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C3V6-7-F-79
BZX84C3V6-7-F-79
Diodes Incorporated
DIODE ZENER 3.6V 300MW SOT23
BCP53TA
BCP53TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BCP5616TTC
BCP5616TTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
74HCT595S16-13
74HCT595S16-13
Diodes Incorporated
HC HIGH PIN COUNT SO-16