2N7002V
  • Share:

onsemi 2N7002V

Manufacturer No:
2N7002V
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 280MA SOT563F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002V is a dual N-channel enhancement mode field effect transistor (MOSFET) produced by onsemi. This device is designed using onsemi's proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. The 2N7002V is particularly suited for low-voltage, low-current applications and is available in an ultra-small surface mount package, making it ideal for space-constrained designs. The device is Pb-free, halide-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Min Max Unit
Drain-Source Voltage (VDS) - - 60 V
Gate-Source Voltage (VGS) - Continuous - - ±20 V
Gate-Source Voltage (VGS) - Pulsed - - ±40 V
Drain Current (ID) - Continuous - - 280 mA mA
Drain Current (ID) - Pulsed - - 1.5 A A
Gate Threshold Voltage (VGS(th)) 1.00 1.76 2.50 V
Static Drain-Source On-Resistance (RDS(on)) - - 7.5 Ω Ω
Maximum Power Dissipation (PD) - - 250 mW mW
Operating Temperature Range -55 - 150 °C

Key Features

  • Dual N-channel MOSFET
  • Low on-state resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package (SOT-563)
  • Pb-free, halide-free, and RoHS compliant
  • Suitable for logic level gate drive sources
  • Very fast switching

Applications

  • Low-voltage, low-current applications
  • Small servo motor control
  • Power MOSFET gate drivers
  • Logic level translators
  • High-speed line drivers
  • Switching applications in general

Q & A

  1. What is the maximum drain-source voltage of the 2N7002V MOSFET?

    The maximum drain-source voltage is 60 V.

  2. What is the continuous drain current rating of the 2N7002V?

    The continuous drain current rating is 280 mA.

  3. What is the typical gate threshold voltage of the 2N7002V?

    The typical gate threshold voltage is 1.76 V.

  4. What is the maximum power dissipation of the 2N7002V?

    The maximum power dissipation is 250 mW.

  5. What is the operating temperature range of the 2N7002V?

    The operating temperature range is from -55°C to 150°C.

  6. Is the 2N7002V RoHS compliant?

    Yes, the 2N7002V is Pb-free, halide-free, and RoHS compliant.

  7. What package type is the 2N7002V available in?

    The 2N7002V is available in a 6-pin SOT-563 surface mount package.

  8. What are some typical applications of the 2N7002V?

    Typical applications include small servo motor control, power MOSFET gate drivers, logic level translators, and high-speed line drivers.

  9. What is the maximum gate-source voltage of the 2N7002V?

    The maximum continuous gate-source voltage is ±20 V, and the maximum pulsed gate-source voltage is ±40 V.

  10. How many MOSFETs are included in the 2N7002V package?

    The 2N7002V includes two isolated N-channel MOSFETs.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:280mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:250mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563F
0 Remaining View Similar

In Stock

$0.47
2,013

Please send RFQ , we will respond immediately.

Same Series
2N7002V
2N7002V
MOSFET 2N-CH 60V 280MA SOT563F

Similar Products

Part Number 2N7002V 2N7002VA
Manufacturer onsemi onsemi
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 280mA 280mA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 50pF @ 25V
Power - Max 250mW 250mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563F SOT-563F

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
NX1029X,115
NX1029X,115
Nexperia USA Inc.
MOSFET N/P-CH 60V/50V SOT666
FDG1024NZ
FDG1024NZ
onsemi
MOSFET 2N-CH 20V 1.2A SC70-6
FDMC8200S
FDMC8200S
onsemi
MOSFET 2N-CH 30V 6A/8.5A 8MLP
2N7002V
2N7002V
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
FDG6322C
FDG6322C
onsemi
MOSFET N/P-CH 25V SC70-6
FDMB2308PZ
FDMB2308PZ
onsemi
MOSFET 2P-CH MLP2X3
NTHD4102PT1G
NTHD4102PT1G
onsemi
MOSFET 2P-CH 20V 2.9A CHIPFET
BUK9K6R8-40EX
BUK9K6R8-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A 56LFPAK
PMZB290UNE2315
PMZB290UNE2315
NXP USA Inc.
1A, 20V, N CHANNEL, MOSFET, XQF
FDG6301N-F085
FDG6301N-F085
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
NTMFD4C85NT1G
NTMFD4C85NT1G
onsemi
MOSFET 2N-CH 30V 8DFN

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5