Overview
The 2N7002VA is an N-Channel enhancement mode field effect transistor (MOSFET) produced by onsemi. This device is designed using a proprietary, high cell density, DMOS technology to minimize on-state resistance and provide rugged, reliable, and fast switching performance. It is suitable for low voltage, low current applications and can handle continuous drain currents up to 280 mA and pulsed currents up to 1.5 A. The 2N7002VA is available in ultra-small surface mount packages and is Pb-free, halide-free, and RoHS compliant.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | 60 | V |
Gate-Source Voltage (Continuous) | VGSS | ±20 | V |
Gate-Source Voltage (Pulsed) | VGSS | ±40 | V |
Drain Current (Continuous) | ID | 280 mA | A |
Drain Current (Pulsed) | IDM | 1.5 A | A |
Gate Threshold Voltage | VGS(th) | 1.00 - 2.50 | V |
Static Drain-Source On-Resistance | RDS(on) | 1.6 - 7.5 Ω @ VGS = 5 V, ID = 0.05 A | Ω |
Total Power Dissipation | PD | 150 mW | mW |
Junction and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Key Features
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package
- Pb-free, Halide-free, and RoHS Compliant
- Rugged and Reliable
- High Saturation Current Capability
Applications
- Small Servo Motor Control
- Power MOSFET Gate Drivers
- Low Voltage, Low Current Applications
- Voltage Controlled Small Signal Switches
- Other Switching Applications
Q & A
- What is the maximum drain-source voltage of the 2N7002VA MOSFET?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating of the 2N7002VA?
The continuous drain current (ID) is 280 mA.
- What is the gate threshold voltage range of the 2N7002VA?
The gate threshold voltage (VGS(th)) ranges from 1.00 to 2.50 V.
- What are the typical applications of the 2N7002VA MOSFET?
Typical applications include small servo motor control, power MOSFET gate drivers, and other low voltage, low current switching applications.
- Is the 2N7002VA MOSFET RoHS compliant?
- What is the maximum total power dissipation of the 2N7002VA?
The maximum total power dissipation (PD) is 150 mW.
- What is the junction and storage temperature range for the 2N7002VA?
The junction and storage temperature range (TJ, TSTG) is -55 to +150°C.
- What are the key features of the 2N7002VA MOSFET?
- What package types are available for the 2N7002VA MOSFET?
- Is the 2N7002VA suitable for high reliability applications?