Overview
The 2N7002DW is a dual N-channel enhancement mode MOSFET designed by Diodes Incorporated. This device is optimized for high-efficiency power management applications, offering low on-state resistance, low gate threshold voltage, and fast switching speeds. The MOSFET is packaged in an ultra-small surface mount package, making it ideal for space-constrained designs. It is also fully RoHS compliant, lead-free, and halogen and antimony free, aligning with environmental and regulatory standards.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | VGS = 0V, ID = 10µA | ||
| Gate-Source Voltage | VGSS | ±20 | V | Continuous | ||
| Gate Threshold Voltage | VGS(TH) | 1.0 | 2.0 | V | VDS = VGS, ID = 250µA | |
| On-State Drain Current | ID(ON) | 0.5 | 1.0 | A | VGS = 10V, VDS = 7.5V | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.2 | 7.5 | Ω | VGS = 5.0V, ID = 0.05A | |
| Input Capacitance | Ciss | 22 | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | |
| Turn-On Delay Time | tD(ON) | 7.0 | 20 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | |
| Turn-Off Delay Time | tD(OFF) | 11.0 | 20 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω |
Key Features
- Dual N-channel MOSFET
- Low on-state resistance (RDS(ON))
- Low gate threshold voltage (VGS(TH))
- Low input capacitance (Ciss)
- Fast switching speed
- Low input/output leakage
- Ultra-small surface mount package (SC-88/SC70-6/SOT-363)
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free, aligning with 'Green' device standards
Applications
- Motor control
- Power management functions
- High-efficiency power management applications
- Automotive applications requiring specific change control (e.g., AEC-Q100/101/200 qualified parts)
Q & A
- What is the maximum drain-source voltage (VDSS) of the 2N7002DW? The maximum drain-source voltage is 60V.
- What is the typical on-state resistance (RDS(ON)) of the 2N7002DW? The typical on-state resistance is 3.2Ω at VGS = 5V and ID = 0.05A.
- What are the key features of the 2N7002DW? Key features include low on-state resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
- What are the typical applications of the 2N7002DW? Typical applications include motor control, power management functions, and high-efficiency power management.
- Is the 2N7002DW RoHS compliant? Yes, the 2N7002DW is totally lead-free and fully RoHS compliant.
- What is the package type of the 2N7002DW? The 2N7002DW is packaged in an ultra-small surface mount package (SC-88/SC70-6/SOT-363).
- What is the gate threshold voltage range of the 2N7002DW? The gate threshold voltage range is from 1.0V to 2.0V.
- What is the maximum continuous drain current (ID) of the 2N7002DW? The maximum continuous drain current is 0.23A at VGS = 10V.
- How fast is the switching speed of the 2N7002DW? The switching speed is characterized by turn-on and turn-off delay times of 7.0ns to 20ns and 11.0ns to 20ns, respectively.
- Is the 2N7002DW suitable for automotive applications? Yes, it is suitable for automotive applications requiring specific change control and is qualified to AEC-Q100/101/200 standards.
