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2N7002KQ-7
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Diodes Incorporated 2N7002KQ-7

Manufacturer No:
2N7002KQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
2N7002 FAMILY SOT23 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KQ-7 is a small signal, N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is specifically designed to meet the stringent requirements of automotive applications and is qualified to AEC-Q101 standards, supported by a PPAP (Production Part Approval Process), and manufactured in IATF 16949 certified facilities. It features a low on-resistance, low input capacitance, and fast switching speed, making it ideal for high-efficiency power management and motor control applications.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 380 mA
Continuous Drain Current (VGS = 5V, TA = +25°C) ID 310 mA
Maximum Continuous Body Diode Forward Current IS 0.5 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 1.2 A
On-Resistance (VGS = 10V) RDS(ON) 2Ω
On-Resistance (VGS = 5V) RDS(ON) 3Ω
Package SOT23
Weight 0.008 grams (Approximate)

Key Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • AEC-Q101 Qualified and PPAP Capable
  • Manufactured in IATF 16949 certified facilities

Applications

  • Motor Control
  • Power Management Functions
  • Backlighting
  • Low Side Load Switch
  • Level Shift Circuits
  • DC-DC Converter
  • Portable Applications (e.g., DSC, PDA, Cell Phone)

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KQ-7 MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current at VGS = 10V and TA = +25°C?

    The continuous drain current is 380mA.

  3. What is the on-resistance at VGS = 10V?

    The on-resistance (RDS(ON)) is 2Ω.

  4. Is the 2N7002KQ-7 MOSFET RoHS compliant?

    Yes, it is totally lead-free and fully RoHS compliant.

  5. What are the typical applications of the 2N7002KQ-7 MOSFET?

    Typical applications include motor control, power management functions, backlighting, and portable applications.

  6. What is the package type of the 2N7002KQ-7 MOSFET?

    The package type is SOT23.

  7. Is the 2N7002KQ-7 MOSFET ESD protected?

    Yes, it is ESD protected up to 2kV.

  8. What are the environmental compliance features of the 2N7002KQ-7 MOSFET?

    The device is halogen and antimony free, and it is a “Green” device.

  9. What is the weight of the 2N7002KQ-7 MOSFET?

    The weight is approximately 0.008 grams.

  10. Is the 2N7002KQ-7 MOSFET qualified for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.3 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002KQ-7 2N7002AQ-7 2N7002K-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta) 180mA (Ta) 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V 5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 5Ohm @ 115mA, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2V @ 250µA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.3 nC @ 4.5 V - 0.3 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 23 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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